SBIR Phase I: Ultra Low Power InAsN Semiconductor Transistors

SBIR 第一阶段：超低功耗 InAsN 半导体晶体管

• 批准号: 0946000
• 负责人: Matt Kim
• 金额: $ 15万
• 依托单位: QuantTera
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-01-01 至 2010-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0946000&HistoricalAwards=false
• 关键词: SBIR; Phase; Ultra; Low; Power

This Small Business Innovation Research (SBIR) Phase I project will demonstrate the viability of a new III-V nitride semiconductor alloy and bipolar transistor structure with the potential to enable ultra low power device operation in applications requiring both RF and digital electronics. Increasing power efficiency has been a major issue for portable and high performance electronic devices and the use of specially designed thin-film device structures on silicon or GaAs substrates can make a huge impact in applications ranging from microprocessors to wireless electronics. This proposal will develop and commercialize ultra low power nitrogen-based semiconductor transistors that will have a large impact on power consumption in the realm of high-performance personal communication electronics. The ultra-low voltage transistors offer an exciting opportunity to achieve ultra low power electronic device operation. Thus, the proposed device embodiment has enormous potential for applications in next generation portable and wireless technology requiring high performance while minimizing power consumption. This program will begin with device design, material synthesis and materials testing and end with proof-of-principle p-n junctions and transistor action demonstrations of our device. The broader impact/commercial potential of this project will allow a new generation of transistors which have advantages over existing silicon-based and GaAs-based devices with regard to reduced power consumption ? thus this new transistor embodiment could impact the entire electronics industry. The potential societal and most importantly the commercial impact of the project will allow the development of the next generation portable, wireless, mobile internet and assistive technology devices to become ever more functional since they will require significantly lower turn-on voltages so as to minimize power consumption while sustaining operation over longer periods of time. The market sector would include the chip manufacturers, aging population, mobile electronics users, the military, and portable electronic manufactures that require reduced power consumption amplifiers. This low voltage transistor innovation will enhance scientific and technological understanding of the basic material physics of ultra small energy bandgap materials which can be used in many other applications as long wavelength detectors and lasers.

这个小型企业创新研究（SBIR）第一阶段项目将展示一种新的III-V型氮化物半导体合金和双极晶体管结构的可行性，该结构具有在需要射频和数字电子的应用中实现超低功耗器件操作的潜力。提高功率效率一直是便携式和高性能电子设备的主要问题，在硅或砷化镓衬底上使用专门设计的薄膜器件结构可以对从微处理器到无线电子产品的应用产生巨大影响。该方案将开发出对高性能个人通信电子领域的功耗产生重大影响的超低功耗氮基半导体晶体管并实现商业化。超低电压晶体管为实现超低功耗电子器件的运行提供了令人兴奋的机会。因此，所提出的器件实施例对于需要高性能同时最小化功耗的下一代便携式和无线技术的应用具有巨大的潜力。该计划将从器件设计，材料合成和材料测试开始，并以我们器件的原理验证p-n结和晶体管动作演示结束。该项目的广泛影响/商业潜力将使新一代晶体管在降低功耗方面比现有的硅基和砷化镓基器件具有优势。因此，这种新型晶体管可能会影响整个电子工业。该项目潜在的社会影响和最重要的商业影响将使下一代便携式、无线、移动互联网和辅助技术设备的开发变得更加实用，因为它们将需要更低的开启电压，从而最大限度地减少功耗，同时保持更长的运行时间。市场部门将包括芯片制造商、老龄化人口、移动电子用户、军队和需要低功耗放大器的便携式电子制造商。这种低压晶体管的创新将加强对超小能量带隙材料的基本材料物理的科学和技术理解，这种材料可以用于许多其他应用，如长波探测器和激光器。