CAREER: Minority Carrier Transport in Wide Bandgap Semiconductor Nanowires: Classical and Quantum Size Effects

职业：宽带隙半导体纳米线中的少数载流子传输：经典和量子尺寸效应

• 批准号: 0845007
• 负责人: Yi Gu
• 金额: $ 56.93万
• 依托单位: Washington State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-02-01 至 2014-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0845007&HistoricalAwards=false
• 关键词: CAREER; Minority; Carrier; Transport; Wide

Technical: This project is to study minority carrier transport properties in nanowires made of wide-bandgap semiconductors. Minority carrier transport is of special interest and importance, as it controls majority carrier transport in many devices and is also sensitive to carrier-carrier interactions. In this project, free-standing wide-bandgap semiconductor nanowires with controlled dimensions are synthesized using the vapor-liquid-solid growth method. One-dimensional minority carrier transport, specifically the surface-dependent and -independent minority carrier diffusion lengths and drift mobilities, is studied using novel scanning probe microscopy-based techniques with integrated electrical and optical probing capabilities. The classical size effects are investigated via the correlation between surface electronic structures under various surface conditions and effects of surfaces as minority carrier recombination and scattering centers. The quantum size effects are examined via the size (diameter) dependence of the minority carrier mobility controlled by various transport-limiting mechanisms including carrier-impurity, carrier-phonon, and carrier-carrier (minority-majority) scattering processes.Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance. With the importance of carrier transport in wide-ranging electronic and optoelectronic applications, the success of this project will provide a fundamental basis for the potentially transformative nanoscale materials and device engineering efforts. This project will lay the foundation for future efforts by the PI to develop the approach of tuning the interplay among electrons, phonons, photons, impurities, and surfaces via dimension, surface, and impurity engineering in order to achieve an integrated control over optical, electrical, magnetic, and thermoelectric properties in nanoscale materials. The research component of this project is integrated into multifaceted educational and outreach activities. In addition to providing research training for students at both undergraduate and graduate levels, the educational efforts aim to enhance general undergraduate physics education for students with diverse backgrounds, as well as to provide a "focused concept" laboratory experience for undergraduate physics majors at the Washington State University. The outreach element of this project aims to provide continuing, long-term support for science teacher education and professional development.

技术：本项目旨在研究宽带隙半导体纳米线中少数载流子的输运特性。少数载流子传输具有特殊的意义和重要性，因为它控制着许多设备中的大多数载流子传输，并且对载流子-载体之间的相互作用也很敏感。本项目采用气-液-固三相法合成了尺寸可控的自支撑宽禁带半导体纳米线。利用基于扫描探针显微镜的集成光电探测能力的新技术，研究了一维少数载流子输运，特别是表面相关和独立的少数载流子扩散长度和漂移迁移率。通过不同表面条件下表面电子结构之间的关联，以及作为少数载流子复合和散射中心的表面效应，研究了经典的尺寸效应。量子尺寸效应是通过少数载流子迁移率的尺寸(直径)依赖关系来检验的，这些少数载流子迁移率受各种传输限制机制控制，包括载流子-杂质、载流子-声子和载流子-载流子(少数-多数)散射过程。非技术性：该项目解决了材料科学中具有高度技术相关性的热门领域的基础研究问题。随着载流子传输在广泛的电子和光电子应用中的重要性，该项目的成功将为潜在的变革性纳米材料和器件工程努力提供基本的基础。该项目将为PI未来的工作奠定基础，通过尺寸、表面和杂质工程来调节电子、声子、光子、杂质和表面之间的相互作用，从而实现对纳米材料的光、电、磁和热电性质的综合控制。该项目的研究部分纳入了多方面的教育和外联活动。除了为本科生和研究生提供研究培训外，教育努力还旨在为不同背景的学生加强普通本科生物理教育，并为华盛顿州立大学的本科生物理专业提供“有重点的概念”实验室体验。该项目的外展部分旨在为科学教师教育和专业发展提供持续、长期的支持。