Large-Area Synthesis and Carrier Transport and Dynamical Properties of Atomically Thin Two-Dimensional In2Se3

原子薄二维In2Se3的大面积合成、载流子输运及动力学性质

• 批准号: 1506480
• 负责人: Yi Gu
• 金额: $ 37.63万
• 依托单位: Washington State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-08-15 至 2020-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1506480&HistoricalAwards=false
• 关键词: Large; Area; Synthesis; Carrier; Transport

Nontechnical Description: The behavior of electrons in a solid material is central to electrical and optical characteristics of the material and plays a critical role in determining the performance of electronic and optoelectronic devices such as transistors, photodetectors, and solar cells. Recently, two-dimensional materials, with the thickness down to a single atomic layer, have emerged as a new class of material systems with novel properties beyond conventional bulk materials. This project studies the charge carrier transport and dynamics in a technologically important two-dimensional material, indium selenide, and develops a fundamental understanding of the synthesis-structure-property relation. The research is integrated into education and outreach activities. In addition to providing research opportunities for undergraduate and graduate students, including those from the underrepresented groups in science and engineering, the research results generated in this project are incorporated into the classroom teaching and hands-on experience with optics, electric circuits, and photovoltaics is offered to high school students through a summer workshop.Technical Description: This research project aims to establish a fundamental understanding of charge carrier transport and ultrafast carrier dynamics in two-dimensional indium selenide. This project involves patterned synthesis of atomically thin single-crystal indium selenide over a large area using van der Waals epitaxy, and property characterizations utilizing a combination of transmission electron microscopy, confocal Raman spectroscopy, scanning probe microscopy, and spatially resolved ultrafast optical pump-probe techniques. This project addresses important issues in this material, particularly the transport properties and dynamics of both majority and minority charge carriers, and the correlation among the properties, structures, and material synthesis. The understanding of this synthesis-structure-property relation provides a fundamental materials science basis for innovative optoelectronic applications.

非技术描述：固体材料中电子的行为对于材料的电学和光学特性至关重要，并且在确定晶体管、光电探测器和太阳能电池等电子和光电器件的性能方面发挥着关键作用。最近，厚度低至单个原子层的二维材料已成为一类新型材料系统，具有超越传统块体材料的新颖特性。该项目研究技术上重要的二维材料硒化铟中的载流子传输和动力学，并对合成-结构-性能关系有一个基本的了解。该研究被纳入教育和推广活动中。除了为本科生和研究生（包括那些来自科学和工程领域代表性不足的群体的学生）提供研究机会外，该项目产生的研究成果还被纳入课堂教学，并通过夏季研讨会为高中生提供光学、电路和光伏的实践经验。技术说明：该研究项目旨在建立对载流子输运和超快载流子动力学的基本了解。 二维硒化铟。该项目涉及使用范德华外延在大面积上图案化合成原子薄单晶硒化铟，并结合透射电子显微镜、共焦拉曼光谱、扫描探针显微镜和空间分辨超快光学泵浦探针技术进行特性表征。该项目解决了该材料的重要问题，特别是多数和少数载流子的传输特性和动力学，以及特性、结构和材料合成之间的相关性。对这种合成-结构-性能关系的理解为创新光电应用提供了基础材料科学基础。