Large-Area Synthesis and Carrier Transport and Dynamical Properties of Atomically Thin Two-Dimensional In2Se3

原子薄二维In2Se3的大面积合成、载流子输运及动力学性质

• 批准号: 1506480
• 负责人: Yi Gu
• 金额: $ 37.63万
• 依托单位: Washington State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-08-15 至 2020-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1506480&HistoricalAwards=false
• 关键词: Large; Area; Synthesis; Carrier; Transport

Nontechnical Description: The behavior of electrons in a solid material is central to electrical and optical characteristics of the material and plays a critical role in determining the performance of electronic and optoelectronic devices such as transistors, photodetectors, and solar cells. Recently, two-dimensional materials, with the thickness down to a single atomic layer, have emerged as a new class of material systems with novel properties beyond conventional bulk materials. This project studies the charge carrier transport and dynamics in a technologically important two-dimensional material, indium selenide, and develops a fundamental understanding of the synthesis-structure-property relation. The research is integrated into education and outreach activities. In addition to providing research opportunities for undergraduate and graduate students, including those from the underrepresented groups in science and engineering, the research results generated in this project are incorporated into the classroom teaching and hands-on experience with optics, electric circuits, and photovoltaics is offered to high school students through a summer workshop.Technical Description: This research project aims to establish a fundamental understanding of charge carrier transport and ultrafast carrier dynamics in two-dimensional indium selenide. This project involves patterned synthesis of atomically thin single-crystal indium selenide over a large area using van der Waals epitaxy, and property characterizations utilizing a combination of transmission electron microscopy, confocal Raman spectroscopy, scanning probe microscopy, and spatially resolved ultrafast optical pump-probe techniques. This project addresses important issues in this material, particularly the transport properties and dynamics of both majority and minority charge carriers, and the correlation among the properties, structures, and material synthesis. The understanding of this synthesis-structure-property relation provides a fundamental materials science basis for innovative optoelectronic applications.

非技术描述：电子在固体材料中的行为对于材料的电学和光学特性至关重要，并且在决定电子和光电器件（例如晶体管、光电探测器和太阳能电池）的性能方面起着关键作用。近年来，厚度可达单个原子层的二维材料已成为一类新的材料系统，具有传统块体材料所没有的新特性。该项目研究了在技术上重要的二维材料，硒化铟中的电荷载流子输运和动力学，并对合成-结构-性能关系有了基本的了解。这项研究已纳入教育和外联活动。除了为本科生和研究生提供研究机会外，包括那些来自科学和工程领域代表性不足的群体的学生，该项目产生的研究成果被纳入课堂教学，并通过夏季研讨会为高中生提供光学，电路和光电子学的实践经验。技术描述：本研究计画旨在建立二维硒化铟之电荷载子输运与超快载子动力学之基本了解。该项目涉及图案化合成的原子级薄的单晶硒化铟在大面积使用货车德瓦尔斯外延，并利用透射电子显微镜，共焦拉曼光谱，扫描探针显微镜和空间分辨超快光学泵浦探测技术相结合的性能表征。该项目解决了这种材料中的重要问题，特别是多数和少数电荷载流子的传输特性和动力学，以及特性，结构和材料合成之间的相关性。对这种合成-结构-性质关系的理解为创新的光电应用提供了基本的材料科学基础。