CAREER: Advanced Silicon-Germanium Nanowire Heterostructures Combining Band Structure Engineering and Modulation Doping

技术：这个职业奖项包括一个关于硅和锗纳米线和异质结构的多方面研究项目。该研究计划旨在利用自下而上生长技术在纳米尺度上开发新型的Si/Ge异质结，研究它们的本征电子性质(如载流子迁移率、载流子浓度)，并设计和制造具有高电子迁移率的新型一维电子器件。具体地说，这项研究将针对纳米线生长和制造领域中的下列矢量：(1)利用径向能带结构工程和Si/Ge核/壳结构中的调制掺杂来设计和生长高迁移率的一维电子系统。(2)开发新的方法制备半导体纳米线的低阻接触，这将使探索半导体纳米线的本征电学性质成为可能，并使高性能纳米线晶体管成为可能。(3)作为光谱方法，研究纳米线器件的磁输运特性，特别是测量电子密度和本征迁移率。非技术性：该项目解决了材料科学中具有高度技术相关性的热门领域的基础研究问题。硅和锗纳米线代表着未来纳米级器件制造的一个特别有吸引力的平台，因为它们与当前的电子体系结构：互补金属氧化物半导体(CMOS)兼容。该项目为在跨学科环境中培训学生提供了一个极好的机会。通过这一职业生涯，PI将把他的研究活动的结果与本科和研究生水平的课程以及外联活动和活动结合起来；将本科生作为拟议研究活动的参与者，强调多样性；并激励数百名K-12代表不足的学生参加与奥斯汀德克萨斯大学工程妇女方案合作组织的外联活动和活动。

Technical: This CAREER award includes a multifaceted research project on silicon and germanium nanowires and heterostructures. The research plan aims to develop novel Si/Ge heterostructures at the nanoscale using bottom up growth techniques, to investigate their intrinsic electronic properties (e.g. carrier mobility, carrier concentration), and to design and fabricate novel, one-dimensional electronic devices with high electron mobility. Specifically, the research will address the following vectors in the area of nanowire growth and fabrication: (1) Design and grow high mobility one-dimensional electron systems using radial band-structure engineering and modulation doping in Si/Ge core/shell structures. (2) Develop new methods to fabricate low resistance contacts to semiconductor nanowires, which will make it possible to explore the intrinsic electronic properties, as well as to enable high performance nanowire transistors. (3) Investigate the magneto-transport properties of nanowire devices down to low temperature as a spectroscopic method, and in particular to measure electron density and intrinsic mobility.Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance. Silicon and germanium nanowires represent a particularly attractive platform for future device fabrication at the nanoscale because of their compatibility to the current electronics architecture: complementary metal oxide semiconductor (CMOS). The project offers an excellent opportunity for training of students in an interdisciplinary environment. Through this CAREER, the PI will integrate the results of his research activities with the courses taught at the undergraduate and graduate level, and with outreach activities and events; include undergraduate students as participants in the proposed research activities, with an emphasis on diversity; and inspire hundreds of K-12 underrepresented students in outreach activities and events organized in collaboration with the Women in Engineering Program at the University of Texas in Austin.