CAREER: Advanced Silicon-Germanium Nanowire Heterostructures Combining Band Structure Engineering and Modulation Doping

技术：该职业奖包括一个关于硅和锗纳米线和异质结构的多方面研究项目。该研究计划旨在使用自下而上的生长技术开发纳米级的新型Si/Ge异质结构，研究其固有的电子特性（例如载流子迁移率，载流子浓度），并设计和制造具有高电子迁移率的新型一维电子器件。具体而言，本研究将在纳米线生长和制造领域解决以下向量：（1）在Si/Ge核/壳结构中使用径向带结构工程和调制掺杂来设计和生长高迁移率的一维电子系统。(2)开发新的方法来制造半导体纳米线的低电阻接触，这将使人们有可能探索内在的电子特性，以及使高性能的纳米线晶体管。(3)研究纳米线器件在低温下的磁输运特性，特别是测量电子密度和本征迁移率。非技术性：该项目涉及材料科学领域的基础研究问题，具有很高的技术相关性。硅和锗纳米线代表了未来纳米级器件制造的一个特别有吸引力的平台，因为它们与当前的电子架构兼容：互补金属氧化物半导体（CMOS）。该项目为在跨学科环境中培训学生提供了极好的机会。通过这个职业生涯，PI将整合他的研究活动的结果与本科和研究生课程，并与推广活动和事件;包括本科生作为拟议的研究活动的参与者，强调多样性;并激励了数百名K-12名代表人数不足的学生参加了与奥斯汀得克萨斯大学妇女工程方案合作组织的外联活动和活动。

Technical: This CAREER award includes a multifaceted research project on silicon and germanium nanowires and heterostructures. The research plan aims to develop novel Si/Ge heterostructures at the nanoscale using bottom up growth techniques, to investigate their intrinsic electronic properties (e.g. carrier mobility, carrier concentration), and to design and fabricate novel, one-dimensional electronic devices with high electron mobility. Specifically, the research will address the following vectors in the area of nanowire growth and fabrication: (1) Design and grow high mobility one-dimensional electron systems using radial band-structure engineering and modulation doping in Si/Ge core/shell structures. (2) Develop new methods to fabricate low resistance contacts to semiconductor nanowires, which will make it possible to explore the intrinsic electronic properties, as well as to enable high performance nanowire transistors. (3) Investigate the magneto-transport properties of nanowire devices down to low temperature as a spectroscopic method, and in particular to measure electron density and intrinsic mobility.Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance. Silicon and germanium nanowires represent a particularly attractive platform for future device fabrication at the nanoscale because of their compatibility to the current electronics architecture: complementary metal oxide semiconductor (CMOS). The project offers an excellent opportunity for training of students in an interdisciplinary environment. Through this CAREER, the PI will integrate the results of his research activities with the courses taught at the undergraduate and graduate level, and with outreach activities and events; include undergraduate students as participants in the proposed research activities, with an emphasis on diversity; and inspire hundreds of K-12 underrepresented students in outreach activities and events organized in collaboration with the Women in Engineering Program at the University of Texas in Austin.