CAREER: Advanced Silicon-Germanium Nanowire Heterostructures Combining Band Structure Engineering and Modulation Doping

职业：结合能带结构工程和调制掺杂的先进硅-锗纳米线异质结构

• 批准号: 0846573
• 负责人: Emanuel Tutuc
• 金额: $ 46.42万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-02-01 至 2016-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0846573&HistoricalAwards=false
• 关键词: CAREER; Advanced; Silicon; Germanium; Nanowire

Technical: This CAREER award includes a multifaceted research project on silicon and germanium nanowires and heterostructures. The research plan aims to develop novel Si/Ge heterostructures at the nanoscale using bottom up growth techniques, to investigate their intrinsic electronic properties (e.g. carrier mobility, carrier concentration), and to design and fabricate novel, one-dimensional electronic devices with high electron mobility. Specifically, the research will address the following vectors in the area of nanowire growth and fabrication: (1) Design and grow high mobility one-dimensional electron systems using radial band-structure engineering and modulation doping in Si/Ge core/shell structures. (2) Develop new methods to fabricate low resistance contacts to semiconductor nanowires, which will make it possible to explore the intrinsic electronic properties, as well as to enable high performance nanowire transistors. (3) Investigate the magneto-transport properties of nanowire devices down to low temperature as a spectroscopic method, and in particular to measure electron density and intrinsic mobility.Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance. Silicon and germanium nanowires represent a particularly attractive platform for future device fabrication at the nanoscale because of their compatibility to the current electronics architecture: complementary metal oxide semiconductor (CMOS). The project offers an excellent opportunity for training of students in an interdisciplinary environment. Through this CAREER, the PI will integrate the results of his research activities with the courses taught at the undergraduate and graduate level, and with outreach activities and events; include undergraduate students as participants in the proposed research activities, with an emphasis on diversity; and inspire hundreds of K-12 underrepresented students in outreach activities and events organized in collaboration with the Women in Engineering Program at the University of Texas in Austin.

技术：该职业奖包括一个关于硅和锗纳米线和异质结构的多方面研究项目。该研究计划旨在使用自下而上的生长技术在纳米尺度上开发新型Si/Ge异质结构，研究其固有电子特性（例如载流子迁移率，载流子浓度），并设计和制造具有高电子迁移率的新型一维电子器件。具体而言，本研究将解决纳米线生长和制造领域的以下矢量：(1)利用径向带结构工程和Si/Ge核/壳结构中的调制掺杂设计和生长高迁移率的一维电子系统。(2)开发制造半导体纳米线低电阻触点的新方法，这将使探索半导体纳米线的内在电子特性成为可能，并使高性能纳米线晶体管成为可能。(3)利用光谱学方法研究纳米线器件在低温下的磁输运特性，特别是测量电子密度和本征迁移率。非技术：该项目涉及材料科学主题领域的基础研究问题，具有高技术相关性。硅和锗纳米线代表了未来纳米级器件制造的一个特别有吸引力的平台，因为它们与当前的电子结构：互补金属氧化物半导体（CMOS）兼容。该项目提供了一个极好的机会，培养学生在一个跨学科的环境。通过这一职业，首席研究员将把他的研究成果与本科和研究生阶段的课程，以及外联活动和活动相结合；包括本科生作为拟议研究活动的参与者，并强调多样性；并在与德克萨斯大学奥斯汀分校工程项目的女性合作组织的外展活动和活动中激励数百名K-12未被充分代表的学生。