SBIR Phase II: Ultra-Low k Interlayer Dielectrics for 22 nm Technology Node and Beyond

SBIR 第二阶段：适用于 22 nm 及以上技术节点的超低 k 层间电介质

• 批准号: 0848490
• 负责人: Petar Dvornic
• 金额: $ 50万
• 依托单位: DENDRITECH, INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-01-15 至 2011-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0848490&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Ultra; Low

This Small Business Innovation Research Phase II project is to develop a new technology for manufacturing ultra-low dielectric constant materials for leading-edge logic devices for the 22 nm technology node and beyond. The research approach is based on the bottom-up synthesis of honeycomb-like nano-structured films in which porogen component is pre-built into the nano-sized cells and can be decomposed in a strictly controlled manner. By extending microchip miniaturization this project may impact information technologies and related fields. This program may also significantly expand the overall knowledge and understanding of nano-structured materials and nanotechnology in general.

这个小型企业创新研究第二阶段项目旨在开发一种新技术，用于制造用于22 nm技术节点及更高技术节点的前沿逻辑器件的超低介电常数材料。这种研究方法是基于自下而上合成蜂窝状纳米结构薄膜的方法，在这种薄膜中，致孔剂成分被预置到纳米细胞中，并可以严格控制分解。通过扩大微芯片的小型化，该项目可能会对信息技术和相关领域产生影响。这项计划还可以大大扩展对纳米结构材料和纳米技术的总体知识和理解。