GOALI: Gated Tunneling Devices from Nano-wire Core Shell Structures for Low-poer Applications

GOALI：用于低功率应用的纳米线核壳结构的门控隧道器件

• 批准号: 0852965
• 负责人: Joerg Appenzeller
• 金额: $ 35万
• 依托单位: Purdue University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-08-01 至 2013-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0852965&HistoricalAwards=false
• 关键词: GOALI; Gated; Tunneling; Devices; Nano

Research Objectives and Approaches:The objective of this research is to address one of the most pressing questions in the area of electronics ?how to reduce power consumption in new generations of field-effect transistors.The approach is to employ for the first time a silicon/germanium nanowire heterostructure in a core-shell arrangement to enable a novel type of gated tunneling device structure. This device makes explicit use of the one-dimensionality of the system by employing the quantum capacitance limit.Intellectual Merit:While transistors have been scaled substantially over the course of the last few decades, power consumption kept increasing due to the use of "conventional" devices. The proposed tunneling transistor development from a coaxial nanowire heterostructure utilizing germanium and silicon is capable of overcoming this major obstacle by employing a band pass filter type arrangement. A one-dimensional wire structure can truly exploit this tunneling approach to create a device with substantially reduced power consumption specs while the use of industry compatible materials allows technology transfer at a later stage.Broader Impact:The proposed work will add to the current understanding of the impact of the quantum capacitance in low-dimensional systems with respect to future low-power devices applications.At the same time the proposed effort includes an integrated education and outreach program that addresses challenges in current nano- materials and devices related education. The proposed program includes 1) the development of a course on "One-Dimensional Nanoelectronics", and 2) an effort on mentoring through Women in Science and Women in Engineering.

研究目标和方法：本研究的目的是解决电子领域最紧迫的问题之一？如何降低新一代场效应晶体管的功耗。该方法是首次采用硅/锗纳米线异质结构的核壳结构，以实现新型的栅控隧穿器件结构。该器件通过引入量子电容极限，明确地利用了系统的一维性。智力上的优点：虽然晶体管在过去几十年中已经大幅度缩小，但由于使用“传统”器件，功耗不断增加。所提出的从利用锗和硅的同轴纳米线异质结构开发的隧穿晶体管能够通过采用带通滤波器类型的布置来克服这个主要障碍。一维导线结构可以真正利用这种隧穿方法来创建具有大幅降低功耗规格的器件，而使用行业兼容材料可以在稍后阶段进行技术转移。更广泛的影响：拟议的工作将增加目前对低维系统中量子电容影响的理解，对于未来的低功耗器件应用。同时，拟议的努力包括一个综合教育和推广计划，解决当前纳米材料和器件相关教育的挑战。拟议的方案包括：（1）开设“一维纳米电子学”课程;（2）努力通过科学界妇女和工程界妇女提供指导。