High Efficiency Diode Lasers based on Nanopatterned Quantum Dot Active Regions
基于纳米图案量子点活性区域的高效二极管激光器
基本信息
- 批准号:0900043
- 负责人:
- 金额:$ 35万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2009
- 资助国家:美国
- 起止时间:2009-07-01 至 2013-06-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
"This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5)."Quantum dot (QD) active regions hold potential for realizing extremely high performance semiconductor diode lasers. Unfortunately, these unique features of ideal QD active layers have not been fully realized to date. The most successful approach to date of forming QD's are self-assembly under the Stranski-Krastanow (SK) growth mode. However, this approach results in a relatively large distribution of QD sizes, leading to significant inhomogeneous broadening of the spectral gain. SK QDs inherently form on top of a two-dimensional 'wetting layer', leading to weak electron and hole confinement to the QD, which results in low gain saturation. Here, we employ dense nanoscale diblock copolymer lithography-based nanofabrication which eliminates the wetting layer states and improves QD size uniformity.Intellectual Merit:The intellectual merit is that these structures will allow for the first time the study of the optical gain characteristics of near ideal (i.e. complete 3D quantum confinement) QD active regions, improving understanding carrier recombination mechanisms, optical gain, and radiative efficiency of QDs. The broad impact of such studies encompasses the first realization of compact diode laser sources with power conversion efficiencies in excess of 80%, drastically reducing power consumption for high output power applications. Broader Impacts:The educational broad impact is that graduate students will learn all aspects of optoelectronic device engineering, from design to fabrication and characterization. Students will have access to state-of-the-art crystal growth facilities at UW-Madison and extensive material characterization techniques to assess the optical and structural quality of the quantum dots.
“该奖项是根据2009年美国复苏和再投资法案(公法111-5)资助的。量子点(QD)有源区具有实现极高性能半导体二极管激光器的潜力。不幸的是,理想QD有源层的这些独特特征迄今尚未完全实现。迄今为止形成QD的最成功的方法是在Stranski-Krastanow(SK)生长模式下的自组装。然而,这种方法导致QD尺寸的相对大的分布,从而导致光谱增益的显著不均匀加宽。SK QD固有地形成在二维“润湿层”的顶部上,导致对QD的弱电子和空穴限制,这导致低增益饱和。在这里,我们采用密集的纳米级二嵌段共聚物光刻为基础的nanofabricants,消除了润湿层的状态,提高了量子点的尺寸uniformity.Intellectual优点:智力的优点是,这些结构将允许第一次研究的光学增益特性的近理想(即完整的3D量子限制)量子点有源区,提高理解载流子复合机制,光学增益和量子点的辐射效率。这些研究的广泛影响包括首次实现功率转换效率超过80%的紧凑型二极管激光源,大幅降低高输出功率应用的功耗。更广泛的影响:教育的广泛影响是研究生将学习光电器件工程的各个方面,从设计到制造和表征。学生将有机会在威斯康星大学麦迪逊分校获得最先进的晶体生长设施和广泛的材料表征技术,以评估量子点的光学和结构质量。
项目成果
期刊论文数量(0)
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Luke Mawst其他文献
Demonstration of ultraviolet III-nitride laser diode with an asymmetric waveguide structure
具有非对称波导结构的紫外III族氮化物激光二极管的演示
- DOI:
- 发表时间:
2024 - 期刊:
- 影响因子:0
- 作者:
M. Seitz;Jacob Boisvere;Bryan Melanson;Cheng Liu;Qinchen Lin;Guangying Wang;Matt Dwyer;Tom Earles;Nelson Tansu;Luke Mawst;S. Pasayat;Chirag Gupta;Jing Zhang - 通讯作者:
Jing Zhang
MOCVD-Grown In0.22Ga0.78As Metamorphic Buffer Layer with Ultralow Threading Dislocation Density
MOCVD 生长的具有超低螺纹位错密度的 In0.22Ga0.78As 变质缓冲层
- DOI:
- 发表时间:
2024 - 期刊:
- 影响因子:0
- 作者:
Honghyuk Kim;Shining Xu;Cheng Liu;Kaddour Lekhal;Thomas Kuech;Luke Mawst - 通讯作者:
Luke Mawst
Luke Mawst的其他文献
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{{ truncateString('Luke Mawst', 18)}}的其他基金
Mid-Infrared Semiconductor Lasers based on virtual substrates with designer specified lattice-constant
基于具有设计者指定晶格常数的虚拟衬底的中红外半导体激光器
- 批准号:
1806285 - 财政年份:2018
- 资助金额:
$ 35万 - 项目类别:
Standard Grant
Dilute-Nitride Mid-IR (2-5 micron) Diode Lasers on InP Substrates
InP 衬底上的稀氮化物中红外(2-5 微米)二极管激光器
- 批准号:
0355442 - 财政年份:2004
- 资助金额:
$ 35万 - 项目类别:
Standard Grant
Two-Dimensional Leaky-Mode VCSEL Arrays: Active Photonic Lattices
二维泄漏模式 VCSEL 阵列:有源光子晶格
- 批准号:
0139823 - 财政年份:2002
- 资助金额:
$ 35万 - 项目类别:
Standard Grant
CAREER: Al-free Vertical Cavity Surface Emitting Lasers (VCSELs) for Reliable, High-Single-Mode Output Power
事业:无铝垂直腔表面发射激光器 (VCSEL),提供可靠的高单模输出功率
- 批准号:
9734283 - 财政年份:1998
- 资助金额:
$ 35万 - 项目类别:
Standard Grant
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