Dilute-Nitride Mid-IR (2-5 micron) Diode Lasers on InP Substrates

稀氮化合物，如InGaAsN，最近在l= 1.3 mm区域的GaAs衬底上实现了高性能二极管激光器。与传统的inp基材料相比，性能优势现在已经得到了很好的确立；与传统的基于inp的激光器相比，它们表现出明显更低的阈值电流密度和降低的温度灵敏度。现在需要新的方法将稀氮材料的发射波长延长到1.3 mm以上，同时保持高性能。虽然已经使用基于GaSb或inas的结构证明了2-4 mm波长区域的二极管激光器，但它们的辐射效率较差，温度敏感性较强，因此只能在波长大于2.8 mm的低温下工作连续波。基于稀氮化物的新结构和活性层材料具有在这一重要波长区域实现高效室温连续波操作的潜力。为了将发射波长扩展到传统InGaAsN i型量子阱所能达到的波长之外，显然需要一种新的有源层结构。PI提出了一种新的稀氮化结构，可以使用传统的InP衬底访问中红外（2.0 - 4.0 mm）波长区域。提出了一种基于In(Ga)AsN/GaAsSb ii型量子阱的应变补偿稀氮化活性区。广泛影响：在室温下有效工作的中红外光源将彻底改变化学传感和自由空间光通信系统。基于该技术，可以开发出紧凑型化学传感器，用于实时便携式检测系统。在不受大气干扰的情况下，自由空间通信链路可以通过在2-4毫米区域内获得高效、高功率激光源而变得可行。在为研究生提供跨学科研究环境的同时，包括材料科学、化学、先进器件建模和光电子器件物理，该项目将本科生整合到研究的开发和执行中，并为新的课程材料提供了载体。智力优势：新的稀氮材料和超晶格结构将被开发，使我们能够研究这些新材料和结构的光学和电子带结构。一种紧密耦合的实验和理论方法将为稀氮型激光结构中增益、载流子复合和载流子泄漏过程的物理特性提供有价值的见解。

0355442MawstDilute nitride compounds, such as InGaAsN, have recently enabled high performance diode lasers on GaAs substrates in the l= 1.3 mm region. The performance advantages over conventional InP-based materials are now well established; they exhibit significantly lower threshold current density with reduced temperature sensitivity compared with conventional InP-based lasers. Novel approaches are now needed to extend the emission wavelength of the dilute-nitride materials beyond 1.3 mm while maintaining high performance. While diode lasers in the 2-4 mm wavelength region have been demonstrated using GaSb- or InAs-based structures, they suffer from poor radiative efficiency and strong temperature sensitivity, allowing them to operate CW only at low temperature for wavelengths longer than 2.8 mm. New structures and active layer materials based on dilute-nitrides hold potential to achieve, efficient, room temperature CW operation in this important wavelength region. To extend emission wavelengths beyond that achievable with a conventional InGaAsN type-I QW, a new active layer structure is clearly needed. The PI proposes a novel dilute-nitride structure to access the Mid-IR (2.0 - 4.0 mm) wavelength region using conventional InP substrates. A strain-compensated, dilute-nitride active region based on In(Ga)AsN/GaAsSb type-II quantum wells is proposed. Broad Impact: Mid-IR sources, which operate efficiently at room temperature, would revolutionize chemical sensing and free-space optical communication systems. Compact chemical sensors could be developed based on this technology for real time portable detection systems. Free from atmospheric disturbances, free-space communication links could become viable from the availability of efficient, high power laser sources in the 2-4 mm region. While providing an interdisciplinary research environment for a graduate student, encompassing materials science, chemistry, advanced device modeling and optoelectronic device physics, this program integrates undergraduates into the development and execution of the research as well as providing a vehicle for new curricular materials.Intellectual merit: New dilute-nitride materials and superlattice structures will be developed, allowing us to study the optical and electronic bandstructure of these new materials and structures. A closely coupled experimental and theoretical approach will provide valuable insights into the physics of gain, carrier recombination, and carrier leakage processes in dilute-nitride type-II laser structures.