Dilute-Nitride Mid-IR (2-5 micron) Diode Lasers on InP Substrates

例如InGaAsN的MawstDilute氮化物，最近在L=1.3 mm区域的砷化镓衬底上实现了高性能的二极管激光器。与传统的InP基材料相比，它们的性能优势已经得到了很好的证实；与传统的InP基激光器相比，它们表现出显著的低阈值电流密度和降低的温度敏感性。现在需要新的方法来延长稀氮化物材料的发射波长超过1.3 mm，同时保持高性能。尽管使用GaSb或InAs结构的2-4 mm波长范围内的二极管激光器受到辐射效率低和温度敏感性强的影响，使得它们只能在波长大于2.8 mm的低温下工作。基于稀氮化物的新型结构和有源层材料有可能在这一重要的波长区域实现高效的室温连续运转。为了将发射波长扩展到传统的InGaAsN I型量子阱所能达到的范围之外，显然需要一种新的有源层结构。PI提出了一种新的稀氮化结构，以使用传统的InP衬底访问中IR(2.0-4.0 mm)波长区域。提出了一种基于In(Ga)AsN/GaAsSbⅡ类量子阱的应变补偿稀氮层有源区。广泛影响：在室温下高效工作的中红外光源将给化学传感和自由空间光通信系统带来革命性的变化。基于该技术可以开发出紧凑型化学传感器，用于便携式实时检测系统。在不受大气干扰的情况下，如果在2-4毫米范围内获得高效、高功率的激光光源，自由空间通信链路将变得可行。该项目为研究生提供跨学科的研究环境，包括材料科学、化学、高级器件建模和光电子器件物理，使本科生参与研究的开发和执行，并为新课程材料提供工具。智力优势：将开发新的稀氮化物材料和超晶格结构，使我们能够研究这些新材料和结构的光学和电子能带结构。一种紧密耦合的实验和理论方法将对稀氮化物第二类激光器结构中的增益、载流子复合和载流子泄漏过程的物理过程提供有价值的见解。

0355442MawstDilute nitride compounds, such as InGaAsN, have recently enabled high performance diode lasers on GaAs substrates in the l= 1.3 mm region. The performance advantages over conventional InP-based materials are now well established; they exhibit significantly lower threshold current density with reduced temperature sensitivity compared with conventional InP-based lasers. Novel approaches are now needed to extend the emission wavelength of the dilute-nitride materials beyond 1.3 mm while maintaining high performance. While diode lasers in the 2-4 mm wavelength region have been demonstrated using GaSb- or InAs-based structures, they suffer from poor radiative efficiency and strong temperature sensitivity, allowing them to operate CW only at low temperature for wavelengths longer than 2.8 mm. New structures and active layer materials based on dilute-nitrides hold potential to achieve, efficient, room temperature CW operation in this important wavelength region. To extend emission wavelengths beyond that achievable with a conventional InGaAsN type-I QW, a new active layer structure is clearly needed. The PI proposes a novel dilute-nitride structure to access the Mid-IR (2.0 - 4.0 mm) wavelength region using conventional InP substrates. A strain-compensated, dilute-nitride active region based on In(Ga)AsN/GaAsSb type-II quantum wells is proposed. Broad Impact: Mid-IR sources, which operate efficiently at room temperature, would revolutionize chemical sensing and free-space optical communication systems. Compact chemical sensors could be developed based on this technology for real time portable detection systems. Free from atmospheric disturbances, free-space communication links could become viable from the availability of efficient, high power laser sources in the 2-4 mm region. While providing an interdisciplinary research environment for a graduate student, encompassing materials science, chemistry, advanced device modeling and optoelectronic device physics, this program integrates undergraduates into the development and execution of the research as well as providing a vehicle for new curricular materials.Intellectual merit: New dilute-nitride materials and superlattice structures will be developed, allowing us to study the optical and electronic bandstructure of these new materials and structures. A closely coupled experimental and theoretical approach will provide valuable insights into the physics of gain, carrier recombination, and carrier leakage processes in dilute-nitride type-II laser structures.