课题基金 / 基金详情

GOALI: 3D III-V Green transistors with ultra-steep subtreshold slope

GOALI: 3D III-V Green transistors with ultra-steep subtreshold slope
GOALI:具有超陡亚阈值斜率的 3D III-V 绿色晶体管
批准号:
0901699
负责人:
Harlan Harris
金额:
$33.19万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2009
资助国家:
美国
项目状态:
已结题
起止时间:
2009-09-15 至 2012-08-31

项目摘要

项目成果

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中文摘要
翻译
“该奖项是根据2009年美国复苏和再投资法案(公法111-5)资助的。“这项研究的目标是设计和构建一种自对准隧道逻辑器件,该器件在关断状态下消耗更少的功率,并且需要更少的开关功率来开启器件。该方法将使用模拟来确定适当的能带工程异质结构,用金属有机化学气相沉积实现异质结构,开发制造3D器件所需的蚀刻和间隔物技术,并制造用于物理和电学表征的器件。这项工作是创新的使用三维III-V族结构和利用自对准工艺来制造复杂的三维设备。智力MeritThe量的能源使用的世界?被动状态下的电子设备数量惊人地过多。在这项工作中实施的新概念将导致被动能源消耗减少了几个数量级,使其成为一个?绿色?晶体管的节能特性。因此,这项研究是变革性的,无论是在其不同的性质,从CMOS和在其潜在的环境影响。更广泛的影响这项工作的最重要的广泛影响是在节能,可以实现这种无源功率器件的引入。此外,该项目还将支持PI夏季的努力?太酷了,不适合上学?旨在接触那些受同伴压力文化影响而远离科学教育的聪明孩子的外展计划。通过向智力低下的学生展示纳米技术的酷因素,PI希望将他们推向学术成就的文化。
英文摘要
" This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5)." The objective of this research is to design and construct a self-aligned tunnel logic device will consume less power in the off-state and require less switching power for device turn-on. The approach will be to use simulations to determine the appropriate band-engineered heterostructures, implement the heterostructures with metallorganic chemical vapor deposition, develop the etching and spacer techniques needed to fabricate the 3D device, and to fabricate the devices for physical and electrical characterization. This work is innovative in the use of 3D III-V structures and utilization of self-aligned processes to fabricate the complex 3D device.Intellectual MeritThe amount of energy used by the world?s electronic devices in the passive state is staggeringly excessive. The novel concepts implemented in this work will result in a reduction of passive energy consumption by several orders of magnitude making it a ?green? transistor for its energy saving nature. Thus this research is transformative both in its divergent nature from CMOS and in its potential environmental impact.Broader ImpactThe most significant broad impact of this work is in the energy savings that can be realized by the introduction of this passive power device. In addition, this project will also support the PI summer effort in a ?Too Cool for School? outreach program designed to reach those intelligent kids whose peer-pressure culture has turned them away from science education. By demonstrating to intelligent underachievers the cool-factors of nanotechnology, the PI hopes to sway them toward the culture of academic achievement.
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Collaborative Research: Vertical GaN Nanostructures on Silicon Fins for Power Electronics and Future Integration with Silicon Technology
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