SBIR Phase I: A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters and Detectors

这个小企业创新研究（SBIR）第一阶段项目将展示一种生产独立GaN晶圆和衬底的新技术。高质量的独立式氮化镓衬底对于制造高性能光发射器非常重要，例如蓝色激光二极管，UV led和UV探测器，它们具有许多不可或缺的应用，从数据存储/数据通信，水/空气净化，到检测/分析用于国土安全应用的化学和生物制剂。尽管过去十年的研究努力，经济实惠的独立GaN晶圆和大直径（2英寸）的衬底尚未商业化。该项目将展示一种生长GaN厚膜和制造独立GaN晶圆的新方法。该项目的更广泛影响/商业潜力将是商业上可用的大直径独立GaN晶圆和基板；在一个可承受的价格，商业化潜力将是巨大的。该项目将使高性能iii -氮化物基光源和探测器的开发和商业化成为可能。“这项奖励是根据2009年美国复苏和再投资法案（公法111-5）资助的。”

This Small Business Innovation Research (SBIR) Phase I project will demonstrate a novel technique for producing freestanding GaN wafers and substrates. High-quality freestanding GaN substrates are important for fabrication of high-performance light emitters, such as blue laser diodes, UV LEDs, and UV detectors that have many indispensable applications from data storage/data communication, to water/air purification, to detection/analysis of chemical and biological agents for homeland security applications. Despite the research efforts in the last decade, affordable freestanding GaN wafers and substrates of large diameters (2inches) have not been available commercially. This project will demonstrate a novel approach to growth of GaN thick films and fabrication of freestanding GaN wafers.The broader impact/commercial potential of this project will be commercially available freestanding GaN wafers and substrates of large diameters; at an affordable price, the commercialization potential will be great. This project will enable development and commercialization of high performance III-nitride-based light emitters and detectors."This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5)."