SBIR Phase I: Large Diameter CdS Single Crystal Substrates for II-VI-based Light Emitters and Displays

SBIR 第一阶段：用于基于 II-VI 的发光器和显示器的大直径 CdS 单晶衬底

• 批准号: 0838318
• 负责人: Shaoping Wang
• 金额: $ 10万
• 依托单位: Fairfield Crystal Technology, LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-01-01 至 2009-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0838318&HistoricalAwards=false
• 关键词: SBIR; Phase; Large; Diameter; CdS

This Small Business Innovation Research (SBIR) Phase I project will demonstrate a novel crystal growth technique for volume production of large diameter, high quality cadmium sulfide (CdS) single crystals suitable as lattice-matched substrates for fabricating II-VI-based light emitters, particularly ZnCdMgSe quantum-well light emitting devices and high resolution full-color displays. One challenge in the development of high-performance ZnCdMgSe quantum-well light emitting devices is the overcoming of manufacturing hurdles of lattice-matched, large-diameter and high-quality CdS single crystal substrates. The proposed effort will investigate a unique growth technique for producing large-diameter, high-quality CdS single crystals in an efficient manner, so that large diameter CdS single crystal substrates may be manufactured at a competitive price. If the proposed growth technology is successfully adopted in volume production, large-diameter, high-quality CdS single crystal substrates will become widely available commercially at an affordable price, which will greatly accelerate development and commercialization of high-performance II-VI-based light emitters and LED-based full-color displays for varieties of defense, industrial and commercial applications. The company's advantage over the competitors is the experience in producing large diameter single crystals and development of an efficient manufacturing process.

这个小企业创新研究（SBIR）第一阶段项目将展示一种新的晶体生长技术，用于批量生产大直径，高质量的硫化镉（CdS）单晶，适用于制造II-VI基发光体，特别是ZnCdMgSe量子阱发光器件和高分辨率全色显示器的晶格匹配衬底。开发高性能ZnCdMgSe量子阱发光器件的一个挑战是克服晶格匹配、大直径和高质量CdS单晶衬底的制造障碍。所提出的努力将调查一个独特的生长技术，生产大直径，高品质的CdS单晶，以有效的方式，使大直径的CdS单晶基板可以制造具有竞争力的价格。如果所提出的生长技术在批量生产中成功采用，大直径、高质量的CdS单晶衬底将以可承受的价格广泛商业化，这将大大加速用于各种国防、工业和商业应用的高性能II-VI基发光体和基于LED的全色显示器的开发和商业化。该公司相对于竞争对手的优势是在生产大直径单晶和开发高效制造工艺方面的经验。