SBIR Phase I: Large Diameter ZnS Single Crystal Substrates for II-VI-based UV-Detectors

SBIR 第一阶段：用于基于 II-VI 的紫外探测器的大直径 ZnS 单晶衬底

• 批准号: 0738794
• 负责人: Shaoping Wang
• 金额: $ 10万
• 依托单位: Fairfield Crystal Technology, LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-01-01 至 2008-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0738794&HistoricalAwards=false
• 关键词: SBIR; Phase; Large; Diameter; ZnS

This Small Business Innovation Research Phase I research project will investigate a novel sublimation crystal growth technique for producing large diameter, high quality zinc sulfide (ZnS) single crystal substrates suitable for fabricating specific UltraViolet (UV) detectors. These UV detectors that are visible/solar-blind with high detection efficiencies will have many important applications that require detection of weak UV radiation against a strong visible or infrared background. The proposed research effort will investigate a unique technique for producing large diameter, high quality ZnS single crystals in an efficient manner. One critical aspect in the development of these high performance UV detectors is to commercialize large diameter, lattice-matched, native single crystal substrates, particularly ZnS substrates. If the proposed sublimation growth technology is successfully adopted in volume production, large diameter, high quality ZnS single crystal substrates will become widely available commercially at an affordable price, which will greatly accelerate development and commercialization of high performance UV detectors.

这个小企业创新研究第一阶段的研究项目将研究一种新的升华晶体生长技术，用于生产大直径，高质量的硫化锌（ZnS）单晶基板，适用于制造特定的紫外线（UV）探测器。这些具有高检测效率的可见光/日盲的UV检测器将具有许多重要的应用，这些应用需要检测相对于强可见光或红外背景的弱UV辐射。拟议的研究工作将调查一个独特的技术，生产大直径，高品质的ZnS单晶的有效方式。这些高性能UV检测器的开发中的一个关键方面是使大直径、晶格匹配的天然单晶衬底（特别是ZnS衬底）商业化。如果所提出的升华生长技术在批量生产中成功采用，大直径、高质量的ZnS单晶衬底将以可承受的价格在商业上广泛获得，这将大大加速高性能紫外探测器的开发和商业化。