SBIR Phase I: A Novel Crystal Growth Technology for Production of ZnO Single Crystal Substrates for Light Emitters and Detectors

SBIR 第一阶段：用于生产发光器和探测器用 ZnO 单晶衬底的新型晶体生长技术

• 批准号: 0943961
• 负责人: Shaoping Wang
• 金额: $ 15万
• 依托单位: Fairfield Crystal Technology, LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-01-01 至 2010-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0943961&HistoricalAwards=false
• 关键词: SBIR; Phase; Novel; Crystal; Growth

This Small Business Innovation Research (SBIR) Phase I project will investigate a novel technique for growing large-diameter, high-quality ZnO single crystals. ZnO single crystal substrates are suitable for fabrication of epitaxial structures for both GaN-based and ZnO-based devices, such as light emitters and detectors, as well as for high power, high temperature and high frequency devices. The proposed growth technique has the potential to produce large diameter, high quality ZnO bulk single crystal boules in an efficient manner at a low cost. Commercialization of high-quality, low-cost ZnO single crystal substrates may have a dramatic impact on the development and commercialization of both GaN-based and ZnO-based devices for a variety of applications.

这个小企业创新研究（SBIR）一期项目将研究一种生长大直径、高质量ZnO单晶的新技术。ZnO单晶衬底适用于gan基和ZnO基器件的外延结构制造，如光发射器和探测器，以及大功率、高温和高频器件。所提出的生长技术有潜力以低成本高效地生产大直径、高质量的ZnO块状单晶球。高质量、低成本ZnO单晶衬底的商业化可能会对各种应用的gan基和ZnO基器件的开发和商业化产生巨大影响。