MRI: Acquisition of the Multi-Probe Wide-Temperature Parameter Analysis System for Low-Voltage Low-Noise Measurements
MRI: Acquisition of the Multi-Probe Wide-Temperature Parameter Analysis System for Low-Voltage Low-Noise Measurements
批准号:
0923376
负责人:
Martin Margala
金额:
$10.06万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2009
资助国家:
美国
项目状态:
已结题
起止时间:
2009-09-15 至 2011-06-30
中文摘要
该奖项是根据2009年美国复苏和再投资法案(公法111-5)资助的。本研究的目的是研究基于复合材料和石墨烯的新型弹道纳米器件和电路的特性和操作现象。该项目还包括研究缺陷对高功率GaN功率性能的影响。所有的实验研究都是使用所获得的多探针宽温区半导体参数分析系统进行的。该系统由一个高精度半导体参数分析仪系统和一个多探头高精度系统组成,该系统具有集成的宽范围和快速温度控制。知识产权:研究所解决的问题集中在两个主题:基于在太赫兹频率下操作的新发明的室温弹道偏转晶体管的新型数字/模拟电路的开发,以及对GaN晶体管中导致栅极泄漏和电源故障的故障机制的研究,特别是对于频率高于20 GHz和温度高达400 C的短沟道GaN HEMT。这项研究的更广泛的影响包括提高纳米器件的研究能力和加强研究生和本科生教育。麻省大学洛厄尔分校为不同的学生群体提供教育。它位于移民家庭高度集中的地区,特别是来自拉丁美洲,东南亚和非洲的移民家庭。这些人是三个最大的少数民族。所收购的系统将有助于研究培训和准备下一代少数民族工程学生在纳米技术和纳米器件的高级研究。此外,收购的系统将扩大与该地区其他研究机构和合作伙伴的研究合作。
英文摘要
This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5). The objective of this research is to study the characteristics and operational phenomena of new ballistic nanoscale devices and circuits based on compound materials and graphene. The project also includes the study of the impact of defects on high power GaN power performance. All experimental studies are conducted using the acquired multi-probe wide temperature range semiconductor parameter analysis system. The system consists of a high precision semiconductor parameter analyzer system combined with a multi-probe high accuracy system with integrated wide and rapid temperature control.Intellectual Merit: Issues addressed by the research focus on two topics: development of a new class of digital/analog circuits based on newly invented room temperature ballistic deflection transistors operating at terahertz frequency, and the investigation of failure mechanisms causing gate leakage and power failures in GaN transistors, particularly for short channel GaN HEMTs at frequencies above 20GHz and at temperatures up to 400C.Broader Impacts: The broader impacts of this research include improved nanodevice research capability and enhanced graduate and undergraduate education. UMass Lowell provides education for a diverse group of students. It is located in a region with a high concentration of immigrant families, especially from Latin America, Southeast Asia and Africa. This population represents the three largest minority groups. The acquired system will be instrumental in research training and preparing the next generation of minority engineering students for advanced study in nanotechnology and nanodevices. Further, the acquired system will expand research collaborations with other research institutions and partners in the area.
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EAGER: Novel Memory Design with Ballistic Deflection Transistors
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批准号:1546011
-
项目类别:Standard Grant
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资助金额:$14.45万
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财政年份:2015
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负责人:Martin Margala
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依托单位:
US -Turkey Collaborative Effort in Advancing Assistive Technology based Education via State of the Art Research, Istanbul, Turkey, March 2011
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批准号:1032297
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项目类别:Standard Grant
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资助金额:$4.69万
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财政年份:2010
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负责人:Martin Margala
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依托单位:
海外基金