Cladding-Pumped Silicon Raman Amplifiers Integrated with In(Ga)As Quantum Dot Laser Pumps

与 In(Ga)As 量子点激光泵集成的包层泵浦硅拉曼放大器

• 批准号: 0925156
• 负责人: Sasan Fathpour
• 金额: $ 40万
• 依托单位: The University of Central Florida Board of Trustees
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-08-15 至 2012-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0925156&HistoricalAwards=false
• 关键词: Cladding; Pumped; Silicon; Raman; Amplifiers

Objective: The objective of this program is to demonstrate InGaAs/GaAs quantum dot laser grown on dislocation filters on silicon substrates that will be used as a pump source for cladding-pumped Si Raman amplifiers integrated on the same chip. Planarization via etching the substrates and regrowth inside the formed trenches will make it possible to couple the laser pump directly into Si waveguides. The upper cladding of Si waveguides will be formed using silicon-oxynitride. The core Si waveguide will be fabricated by shrinking the cross-section dimensions of patterned waveguides via thermal oxidation. Intellectual merit: The intellectual merit is the first demonstration of high-performance hybrid III-V on Si lasers and their integration with Si Raman amplifiers. High-performance hybrid Si lasers have been elusive and their demonstration is transformative. Demonstration of a high-gain silicon optical amplifier integrated with a pump source is also transformative and is considered a milestone in integrated photonics. The proposed waveguide fabrication technique avoids the difficulties of electron-beam lithography for submicron waveguide fabrication.Broader impacts: The broader impacts are the interdisciplinary nature of the program, its undergraduate and underrepresented minorities and K-12 outreach. The proposed program provides a broader impact to science and society beyond technical merits. It combines optoelectronics with microelectronics, physics, and materials science and engineering, thereby extends optoelectronics to real applications. The proposed program outlines interdisciplinary research for graduate and undergraduate students. Outreach projects for women and underrepresented minorities are highlighted. The program proposes to expose middle- and high-school students to scientific and engineering disciplines.

目的：该计划的目的是展示InGaAs/GaAs量子点激光器上的位错过滤器上生长的硅衬底，将被用作泵浦源的包层泵浦硅拉曼放大器集成在同一芯片上。通过蚀刻衬底和在所形成的沟槽内再生长的平坦化将使激光泵浦直接耦合到Si波导中成为可能。 Si波导的上包层将使用氮氧化硅形成。核心硅波导将通过热氧化缩小图案化波导的横截面尺寸来制造。 智力优点：其智力优势在于首次展示了高性能的硅基III-V混合激光器及其与硅拉曼放大器的集成。高性能混合硅激光器一直难以捉摸，其演示是变革性的。 与泵浦源集成的高增益硅光放大器的演示也是变革性的，被认为是集成光子学的里程碑。 拟议的波导制造技术避免了困难的电子束光刻亚微米waveguidefabrication.Broader影响：更广泛的影响是该计划的跨学科性质，其本科和代表性不足的少数民族和K-12推广。拟议的计划提供了一个更广泛的影响，科学和社会超越技术优点。 它将光电子学与微电子学、物理学、材料科学和工程学相结合，从而将光电子学扩展到真实的应用领域。 该计划概述了研究生和本科生的跨学科研究。 突出了为妇女和代表性不足的少数群体开展的外联项目。该方案建议让初中和高中学生接触科学和工程学科。