课题基金 / 基金详情

ARI-MA: Design and Growth of High Density, Wide Band-Gap Semiconductor Materials

ARI-MA: Design and Growth of High Density, Wide Band-Gap Semiconductor Materials
ARI-MA:高密度、宽带隙半导体材料的设计和生长
批准号:
0938810
负责人:
Mercouri Kanatzidis
金额:
$40.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2009
资助国家:
美国
项目状态:
已结题
起止时间:
2009-09-01 至 2011-03-31

项目摘要

项目成果

Mercouri Kanatzidis的其他基金

相似基金

相关文献

中文摘要
翻译
该项目研究使用专门为高分辨率室温识别裂变材料发出的射线而设计的新材料。这一努力将提高高密度、重元素半导体的科学水平和知识水平,这些半导体的能级差距相对较大。拟议中的项目具有潜在的变革性,因为它将利用基于降维概念的新材料设计思想来识别用于灵敏射线探测的新材料。共价骨架。使用晶体生长技术,我们将生长和测量各种半导体化合物,以验证它们的能隙和它们的电阻率。所需材料的最低室温电阻率要求为~108欧姆-厘米,以允许施加更大的偏置,从而导致更快的载流子漂移速度和更深的检测器件耗尽深度。对于最高Z的材料,通过选择诸如这里推荐的硫族化合物之类的化合物,也可以显著降低所谓的Fano噪声(从而提高能量分辨率)。这些材料将以晶体和设备的形式进行表征和测试,以进行射线探测。基于理论的材料设计将在很大程度上依赖于对高Z宽禁带半导体理想特性的基于知识的优化。选择过程和实验方法也将密切依赖于理论指导。这是综合、测量和理论之间的密切跨学科合作,涉及具有互补技能的群体。
英文摘要
This project investigates the use of novel materials specially designed for high resolution room-temperature identification of ã-rays emitted from fissile materials. This effort will enhance the state of the science and body of knowledge for highly dense, heavy element semiconductors with relatively wide energy gaps. The proposed project has the potential to be transformative in nature because it will identify new materials for sensitive ã-ray detection using a new idea for materials design based on the concept of ?dimensional reduction? of covalent frameworks. Using crystal growth techniques, we will grow and survey a variety of semiconducting compounds to validate their energy gaps and their resistivity. A minimum room temperature resistivity of ~108 Ohm-cm is required in the desired materials in order to allow for larger biases to be applied, resulting in faster carrier drift velocities and deeper depletion depths in the detection device. For the highest Z materials, the so-called Fano noise can also be substantially decreased (and thus energy resolution improved), by choosing compounds such as the chalcogenides proposed here. The materials will be characterized and tested in both crystal and device form for ã-ray detection. Theory-based materials design will depend strongly on knowledge-based optimization of the desirable properties of high Z wide gap semiconductors. The selection process and experimental approach will also rely closely on theoretical guidance. This is a close interdisciplinary collaboration between synthesis, measurement and theory involving groups with complementary skills.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Defining Reaction Paths for Chalcogenide Materials Discovery
  • 批准号:
    2305731
  • 项目类别:
    Standard Grant
  • 资助金额:
    $56.4万
  • 财政年份:
    2023
  • 负责人:
    Mercouri Kanatzidis
  • 依托单位:
Synthesis of Complex and Advanced Chalcogenide Materials
  • 批准号:
    2003476
  • 项目类别:
    Standard Grant
  • 资助金额:
    $49.95万
  • 财政年份:
    2020
  • 负责人:
    Mercouri Kanatzidis
  • 依托单位:
MRI: Acquisition of A Single Crystal Diffractometer With A Silver Microsource and A Detector Optimized for Silver Radiation
  • 批准号:
    1920248
  • 项目类别:
    Standard Grant
  • 资助金额:
    $30.8万
  • 财政年份:
    2019
  • 负责人:
    Mercouri Kanatzidis
  • 依托单位:
EAGER: Enabling Quantum Leap: Driven Non-Equilibrium Room Temperature Quantum States
  • 批准号:
    1838507
  • 项目类别:
    Standard Grant
  • 资助金额:
    $30.0万
  • 财政年份:
    2018
  • 负责人:
    Mercouri Kanatzidis
  • 依托单位:
国内基金
海外基金
二维MA₂Z₄材料家族热输运特性的高通量计算研究
  • 批准号:
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2026
  • 负责人:
    李振东
  • 依托单位:
二维MA2Z4异质结中多体效应的理论研究
ALKBH1通过6mA去甲基化调控mtDNA释放在急性胰腺炎中的作用与机制
  • 批准号:
    2025JJ60542
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2025
  • 负责人:
    朱帅
  • 依托单位:
新型氟[18F]标记的MA0-B分子探针的合成及其用于帕金森病发病机制的探索研究
  • 批准号:
    --
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    --
  • 批准年份:
    2024
  • 负责人:
    --
  • 依托单位: