SBIR Phase I: Advanced Dielectric Nanocomposites

SBIR 第一阶段：先进介电纳米复合材料

• 批准号: 0945637
• 负责人: Yongdong Jiang
• 金额: $ 15万
• 依托单位: NGIMAT CO.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-01-01 至 2010-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0945637&HistoricalAwards=false
• 关键词: SBIR; Phase; Advanced; Dielectric; Nanocomposites

This Small Business Innovation Research (SBIR) Phase I project aims to develop three-phase dielectric nanocomposite films for embedded capacitor. The proposed three-phase nanocomposite dielectric materials may demonstrate high dielectric constant, low loss, low leakage current, and high breakdown voltage while maintaining the adhesion, processability, and flexibility of polymers, which may enable embedded capacitors for printed circuit board applications. The broader societal/commercial impact of this project will be the potentials to meet the projected trends in electronic device miniaturization and produce better dielectric materials for the next generation capacitors. Currently, the majority of the printed circuit board surface is occupied by passive components, with most of these being capacitors. If the capacitors can be embedded in the board itself, the size of the device can be reduced significantly with additional benefits in performance, functionality, and cost. In addition, this project may also provide a new dielectric material with high dielectric constant and low leakage current to meet the requests of high energy density capacitors.

这个小型企业创新研究（SBIR）第一阶段项目旨在开发用于嵌入式电容器的三相介电纳米复合薄膜。 所提出的三相纳米复合电介质材料可以表现出高介电常数、低损耗、低漏电流和高击穿电压，同时保持聚合物的粘附性、可加工性和柔性，这可以使嵌入式电容器能够用于印刷电路板应用。该项目更广泛的社会/商业影响将是满足电子设备小型化的预期趋势，并为下一代电容器生产更好的介电材料。 目前，印刷电路板表面的大部分被无源元件占据，其中大部分是电容器。 如果电容器可以嵌入电路板本身，则可以显著减小器件的尺寸，并在性能、功能和成本方面带来额外的好处。 此外，本计画亦可提供一种高介电常数、低漏电流的新型介电材料，以满足高能量密度电容器的需求。