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SBIR Phase IB: Nanometer-Level Fidelity in Maskless Lithography

SBIR Phase IB: Nanometer-Level Fidelity in Maskless Lithography
SBIR IB 阶段:无掩模光刻中的纳米级保真度
批准号:
1003123
负责人:
Henry Smith
金额:
$5.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2010
资助国家:
美国
项目状态:
已结题
起止时间:
2010-01-01 至 2010-06-30

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中文摘要
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英文摘要
This Small Business Innovation Research Phase I project will investigate the feasibility of achieving, by means of precision measurement and software corrections, sub-1nm feature-size control and 1nm feature-placement precision using its maskless-lithography tool based on zone-plate-array lithography (ZPAL). Several components of the semiconductor industry currently require nanometer-level patterning fidelity, in particular imprint templates, photonic devices and photonic intrachip communication. Future nanotechnology applications will also require such fidelity. By incorporating absorbance-modulation optical lithography into ZPAL, lithographic resolution below 20 nm should be achieved, enabling ZPAL to outperform electron-beam lithography in the important metrics of: throughput, resolution, overlay, feature-size control, feature-placement accuracy and size of field.
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Support of student travel to the EIPBN conference. To be held at the Gaylord Opryland Resort, Nashville, Tennessee, May 28-31, 2013.
University of the Virgin Islands: Living on Earth III: Social-Ecological Systems Workshop 2012, October 24-28, 2012
  • 批准号:
    1237410
  • 项目类别:
    Standard Grant
  • 资助金额:
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    2012
  • 负责人:
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Support of student travel to EIPBN 12
SBIR Phase II: Nanometer-Level Fidelity in Maskless Lithography
  • 批准号:
    1058417
  • 项目类别:
    Standard Grant
  • 资助金额:
    $49.99万
  • 财政年份:
    2011
  • 负责人:
    Henry Smith
  • 依托单位:
国内基金
海外基金
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  • 项目类别:
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