SBIR Phase IB: Nanometer-Level Fidelity in Maskless Lithography

SBIR IB 阶段：无掩模光刻中的纳米级保真度

• 批准号: 1003123
• 负责人: Henry Smith
• 金额: $ 5万
• 依托单位: LUMARRAY LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-01-01 至 2010-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1003123&HistoricalAwards=false
• 关键词: SBIR; Phase; IB; Nanometer; Level

This Small Business Innovation Research Phase I project will investigate the feasibility of achieving, by means of precision measurement and software corrections, sub-1nm feature-size control and 1nm feature-placement precision using its maskless-lithography tool based on zone-plate-array lithography (ZPAL). Several components of the semiconductor industry currently require nanometer-level patterning fidelity, in particular imprint templates, photonic devices and photonic intrachip communication. Future nanotechnology applications will also require such fidelity. By incorporating absorbance-modulation optical lithography into ZPAL, lithographic resolution below 20 nm should be achieved, enabling ZPAL to outperform electron-beam lithography in the important metrics of: throughput, resolution, overlay, feature-size control, feature-placement accuracy and size of field.

该小型企业创新研究第一阶段项目将研究通过精密测量和软件校正，使用其基于波带板阵列光刻（ZPAL）的无掩模光刻工具实现亚1nm特征尺寸控制和1nm特征位置精度的可行性。半导体工业的几个组件目前需要纳米级的图案化保真度，特别是压印模板，光子器件和光子芯片内通信。未来的纳米技术应用也将需要这种保真度。通过将吸收调制光学光刻纳入ZPAL中，应实现低于20 nm的光刻分辨率，使ZPAL能够在以下重要指标中优于电子束光刻：吞吐量、分辨率、重叠、特征尺寸控制、特征位置精度和场尺寸。