SBIR Phase I: Nanometer-Level Fidelity in Maskless Lithography

SBIR 第一阶段：无掩模光刻的纳米级保真度

• 批准号: 0912420
• 负责人: Henry Smith
• 金额: $ 10万
• 依托单位: LUMARRAY LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-07-01 至 2010-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0912420&HistoricalAwards=false
• 关键词: SBIR; Phase; Nanometer; Level; Fidelity

0912420This Small Business Innovation Research Phase I project will investigate the feasibility of achieving, by means of precision measurement and software corrections, sub-1nm feature-size control and 1nm feature-placement precision using its maskless-lithography tool based on zone-plate-array lithography(ZPAL). Several components of the semiconductor industry currently require nanometer-level patterning fidelity, in particular imprint templates, photonic devices and photonic intrachip communication. Future nanotechnology applications will also require such fidelity. By incorporating absorbance-modulation optical lithography into ZPAL, lithographic resolution below 20 nm should be achieved, enabling ZPAL to outperform electron-beam lithography in the important metrics of: throughput, resolution, overlay, feature-size control, feature-placement accuracy and size of field.This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).

[091242]这个小企业创新研究第一阶段项目将研究利用基于区板阵列光刻（ZPAL）的无掩模光刻工具，通过精密测量和软件校正，实现亚1nm特征尺寸控制和1nm特征放置精度的可行性。半导体工业的一些组件目前需要纳米级的图形保真度，特别是压印模板，光子器件和光子芯片内通信。未来的纳米技术应用也需要这样的保真度。通过将吸收调制光学光刻技术集成到ZPAL中，可以实现20nm以下的光刻分辨率，使ZPAL在吞吐量、分辨率、覆盖、特征尺寸控制、特征放置精度和光场尺寸等重要指标上优于电子束光刻技术。该奖项是根据2009年美国复苏和再投资法案（公法111-5）资助的。