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Fundamental Studies of Novel Nitride Semiconductors

Fundamental Studies of Novel Nitride Semiconductors
新型氮化物半导体的基础研究
批准号:
1006132
负责人:
Kathleen Kash
金额:
$38.46万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2010
资助国家:
美国
项目状态:
已结题
起止时间:
2010-07-01 至 2014-06-30

项目摘要

项目成果

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中文摘要
翻译
技术:本项目的目的是促进对直接带隙半导体ZnGeN_2及其相关化合物的性质的理解和控制。这些材料在结构上与GaN、InN和AlN相关,并具有一些共同的性质,例如从紫外到近红外的带隙。理论预测了一些明显不同的性质,特别是它们的掺杂和缺陷性质、非线性光学性质和较低的电离度。这些重要的差异激发了人们对研究ZnGeN和相关材料的兴趣,既扩大了我们对材料的基本理解,也探索了它们在利用其独特性质应用于光电子学方面的潜力。该项目为这些材料开发了新的生长方法,并探索了它们的热力学性质。对线性光学性质的研究允许将实验结果与最近对电子能带结构和声子谱的预测进行比较。对非故意掺杂材料的传输、光学和结构特性的研究有助于识别非故意掺杂材料的本征和非本征缺陷,这是控制光电子应用的传输特性的第一步。非技术性:该项目解决了材料科学中具有高度技术相关性的热门领域的基础研究问题。它应该有利于社会扩大探索新材料的知识库,这些新材料可能对新技术的开发感兴趣。这项研究引起了凝聚态物理和材料科学界的广泛兴趣,并促进了研究生和本科生研究人员的教育和培训。本科生研究人员的参与将特别强烈,包括凯斯西储大学和约翰卡罗尔大学的学生。重点招收代表不足的少数民族学生。研究成果将通过科学出版物和参加会议和公开讲座广泛传播。
英文摘要
Technical: This project aims to advance the understanding and control of the properties of direct band gap semiconductor ZnGeN2 and related compounds. These materials are structurally related to GaN, InN and AlN, and share some of their properties, such as band gaps that span the wavelength range from the ultraviolet to the near infrared. Theories have predicted some distinctly different properties, in particular their doping and defect properties, nonlinear optical properties, and lower ionicities. These important differences motivate interest in studying ZnGeN2 and related materials, to both expand our fundamental understanding of materials and to explore their potential for applications to optoelectronics that would take advantage of their unique properties. The project develops new growth methods for these materials and explores their thermodynamic properties. Investigations of the linear optical properties allow comparison of experimental results with recent predictions of the electronic band structure and phonon spectra. Investigation of the transport, optical and structural properties aids in the identification of native and non-native defects of the unintentionally doped material, a first step toward control of the transport properties for optoelectronic applications.Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance. It should benefit society in expanding the knowledge base for exploration of new materials of potential interest in the development of new technologies. The research is of broad interest to the condensed matter physics and materials science communities and promotes the education and training of graduate and undergraduate researchers. The participation of undergraduate researchers will be particularly strong, involving students from Case Western Reserve University and John Carroll University. Focused efforts will be made to recruit underrepresented minority students. Research results will be broadly disseminated through scientific publication and participation in conferences and public lectures.
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会议论文
DMREF: SusChEM: Heterovalent Ternary Nitride Semiconductors and Mixed Ternary-Binary Heterostructures
  • 批准号:
    1533957
  • 项目类别:
    Standard Grant
  • 资助金额:
    $128.02万
  • 财政年份:
    2015
  • 负责人:
    Kathleen Kash
  • 依托单位:
SusChEM: The Role of Disorder in an Expanded Family of Nitride Semiconductors
  • 批准号:
    1409346
  • 项目类别:
    Standard Grant
  • 资助金额:
    $38.97万
  • 财政年份:
    2014
  • 负责人:
    Kathleen Kash
  • 依托单位:
Collaborative Research: Conference for Undergraduate Women in Physics, January 2012 at Case Westernn Reserve University
  • 批准号:
    1144335
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.8万
  • 财政年份:
    2012
  • 负责人:
    Kathleen Kash
  • 依托单位:
Summer Research in Physics at Case Western Reserve University
  • 批准号:
    0850037
  • 项目类别:
    Standard Grant
  • 资助金额:
    $32.0万
  • 财政年份:
    2009
  • 负责人:
    Kathleen Kash
  • 依托单位:
海外基金