Fundamental Studies of Novel Nitride Semiconductors

新型氮化物半导体的基础研究

• 批准号: 1006132
• 负责人: Kathleen Kash
• 金额: $ 38.46万
• 依托单位: Case Western Reserve University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-07-01 至 2014-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1006132&HistoricalAwards=false
• 关键词: Fundamental; Studies; Novel; Nitride; Semiconductors

Technical: This project aims to advance the understanding and control of the properties of direct band gap semiconductor ZnGeN2 and related compounds. These materials are structurally related to GaN, InN and AlN, and share some of their properties, such as band gaps that span the wavelength range from the ultraviolet to the near infrared. Theories have predicted some distinctly different properties, in particular their doping and defect properties, nonlinear optical properties, and lower ionicities. These important differences motivate interest in studying ZnGeN2 and related materials, to both expand our fundamental understanding of materials and to explore their potential for applications to optoelectronics that would take advantage of their unique properties. The project develops new growth methods for these materials and explores their thermodynamic properties. Investigations of the linear optical properties allow comparison of experimental results with recent predictions of the electronic band structure and phonon spectra. Investigation of the transport, optical and structural properties aids in the identification of native and non-native defects of the unintentionally doped material, a first step toward control of the transport properties for optoelectronic applications.Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance. It should benefit society in expanding the knowledge base for exploration of new materials of potential interest in the development of new technologies. The research is of broad interest to the condensed matter physics and materials science communities and promotes the education and training of graduate and undergraduate researchers. The participation of undergraduate researchers will be particularly strong, involving students from Case Western Reserve University and John Carroll University. Focused efforts will be made to recruit underrepresented minority students. Research results will be broadly disseminated through scientific publication and participation in conferences and public lectures.

技术：该项目旨在促进对直接带隙半导体ZnGeN2和相关化合物性质的理解和控制。这些材料在结构上与GaN、InN和AlN相关，并且共享它们的一些特性，例如跨越从紫外到近红外的波长范围的带隙。理论已经预测了一些明显不同的性质，特别是它们的掺杂和缺陷性质，非线性光学性质和较低的离子性。这些重要的差异激发了人们对ZnGeN2和相关材料的研究兴趣，既扩大了我们对材料的基本理解，又探索了它们在光电子学应用中的潜力，从而利用它们独特的特性。该项目为这些材料开发了新的生长方法，并探索了它们的热力学性质。的线性光学性质的调查允许比较的实验结果与最近的预测的电子能带结构和声子谱。对输运、光学和结构性质的研究有助于识别非故意掺杂材料的原生和非原生缺陷，这是控制光电应用输运性质的第一步。非技术性：该项目涉及材料科学领域的基础研究问题，具有高技术相关性。它应有利于社会扩大知识基础，以探索新技术开发中可能感兴趣的新材料。该研究对凝聚态物理和材料科学界具有广泛的兴趣，并促进了研究生和本科生研究人员的教育和培训。本科研究人员的参与将特别强烈，涉及凯斯西储大学和约翰卡罗尔大学的学生。将集中努力招收代表性不足的少数民族学生。研究成果将通过科学出版物和参加会议及公开讲座广泛传播。