MRI: Development of Instrumentation for Plasma-Assisted Liquid Phase Epitaxy of III-Nitrides
MRI:等离子体辅助 III 族氮化物液相外延仪器的开发
基本信息
- 批准号:0420765
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2004
- 资助国家:美国
- 起止时间:2004-08-15 至 2008-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This award from the Major Research Instrumentation Program supports Case Western University to develop a novel, plasma-assisted liquid phase epitaxy (PLPE) system for the growth of gallium nitride and related materials. The established methods of liquid phase epitaxy (LPE) will be combined with recently developed plasma assisted melt growth methods to provide a system for growing device-quality single crystal layers up to 5 cm in diameter. To accomplish this end, a highly versatile PLPE growth system with a near-atmospheric pressure plasma source, temperature and temperature gradient control, and provision for linear and rotational motion will be designed and built. Some of the advantages of Plasma Assisted Liquid Phase Epitaxy (PLPE) are: (1) they are much less expensive to build and to run than growth systems for systems; (2) higher growth rates and higher quality material; (3) simplicity and in environmental clean; (4) potential for application to other classes of semiconductor materials new possibilities for a wide variety of novel materials research. In addition, there are potential applications for important technologies such as ultraviolet and blue lasers, and high-temperature and high power electronics. The new instrumentation will have broader impact on the nation's academic research infrastructure by providing a new technology for pioneering materials growth research. Experience has shown that the LPE process is a rapid, cost-effective technique for investigation of innovative materials research concepts, and therefore is especially well suited to the university research environment.This award from the Major Research Instrumentation Program supports Case Western University with the development a novel, plasma-assisted liquid phase epitaxy (PLPE) system for the growth of gallium nitride and related materials. The PLPE growth system will operate with a near-atmospheric pressure plasma source, temperature and temperature gradient control, and provision for linear and rotational motion will be designed and built. Some of the advantages of the new instrument are: (1) economic; (2) higher growth rates and higher quality material; (3) simplicity and in environmental clean; (4) application to other classes of semiconductor materials. The system will open new possibilities for a wide variety of novel materials research. In addition, there are potential applications for important technologies such as ultraviolet and blue lasers, and high-temperature and high power electronics. The new instrumentation will have broader impact on the nation's academic research infrastructure by providing a new technology for pioneering materials growth research. It is especially well suited to the university research environment.
来自主要研究仪器计划的这一奖项支持凯斯西部大学开发一种新颖的等离子体辅助液相外延(PLPE)系统,用于氮化镓和相关材料的生长。 已建立的液相外延(LPE)方法将与最近开发的等离子体辅助熔体生长方法相结合,以提供一个系统,用于生长直径高达5厘米的器件质量单晶层。 为了实现这一目标,一个高度通用的PLPE生长系统与近大气压等离子体源,温度和温度梯度控制,并提供线性和旋转运动将被设计和建造。 等离子体辅助液相外延(PLPE)的一些优点是:(1)它们的建造和运行比生长系统便宜得多;(2)更高的生长速率和更高质量的材料;(3)简单和环境清洁;(4)应用于其他类别的半导体材料的潜力;(5)为各种新型材料的研究提供了新的可能性。此外,紫外线和蓝光激光以及高温和大功率电子学等重要技术也有潜在的应用。 新仪器将通过为开拓材料生长研究提供新技术,对国家的学术研究基础设施产生更广泛的影响。经验表明,LPE工艺是一种快速、经济的技术,可用于研究创新材料的研究概念,因此特别适合大学的研究环境。该奖项来自重大研究仪器计划,支持凯斯西控大学开发一种新型的等离子体辅助液相外延(PLPE)系统,用于氮化镓和相关材料的生长。 PLPE生长系统将采用近大气压等离子体源、温度和温度梯度控制进行操作,并将设计和建造线性和旋转运动。 新仪器的一些优点是:(1)经济;(2)更高的增长率和更高质量的材料;(3)简单且环境清洁;(4)适用于其他类别的半导体材料。该系统将为各种新型材料的研究开辟新的可能性。此外,紫外线和蓝光激光以及高温和大功率电子学等重要技术也有潜在的应用。 新仪器将通过为开拓材料生长研究提供新技术,对国家的学术研究基础设施产生更广泛的影响。它非常适合大学的研究环境。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Kathleen Kash其他文献
Experimental investigation of the enthalpy, entropy, and free energy of formation of GaN
- DOI:
10.1016/j.jcrysgro.2008.09.203 - 发表时间:
2008-12-15 - 期刊:
- 影响因子:
- 作者:
Timothy J. Peshek;John C. Angus;Kathleen Kash - 通讯作者:
Kathleen Kash
Kathleen Kash的其他文献
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{{ truncateString('Kathleen Kash', 18)}}的其他基金
DMREF: SusChEM: Heterovalent Ternary Nitride Semiconductors and Mixed Ternary-Binary Heterostructures
DMREF:SusChEM:异价三元氮化物半导体和混合三元-二元异质结构
- 批准号:
1533957 - 财政年份:2015
- 资助金额:
-- - 项目类别:
Standard Grant
SusChEM: The Role of Disorder in an Expanded Family of Nitride Semiconductors
SusChEM:无序在氮化物半导体扩展家族中的作用
- 批准号:
1409346 - 财政年份:2014
- 资助金额:
-- - 项目类别:
Standard Grant
Collaborative Research: Conference for Undergraduate Women in Physics, January 2012 at Case Westernn Reserve University
合作研究:物理学本科女性会议,2012 年 1 月在凯斯西储大学举行
- 批准号:
1144335 - 财政年份:2012
- 资助金额:
-- - 项目类别:
Standard Grant
Fundamental Studies of Novel Nitride Semiconductors
新型氮化物半导体的基础研究
- 批准号:
1006132 - 财政年份:2010
- 资助金额:
-- - 项目类别:
Continuing Grant
Summer Research in Physics at Case Western Reserve University
凯斯西储大学物理学暑期研究
- 批准号:
0850037 - 财政年份:2009
- 资助金额:
-- - 项目类别:
Standard Grant
Acquisition of Instrumentation for an Optical Materials Shared Facility
收购光学材料共享设施的仪器
- 批准号:
9512396 - 财政年份:1995
- 资助金额:
-- - 项目类别:
Standard Grant
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