Oxide Molecular Beam Epitaxy of Highly-Perfect Thin Film Perovskites

高完美薄膜钙钛矿的氧化物分子束外延

• 批准号: 1006640
• 负责人: Susanne Stemmer
• 金额: $ 39万
• 依托单位: University of California-Santa Barbara
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-07-15 至 2015-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1006640&HistoricalAwards=false
• 关键词: Oxide; Molecular; Beam; Epitaxy; Highly

NON-TECHNICAL DESCRIPTIONThe project focuses on oxide materials that exhibit unique functionalities not found in any other materials class, such as ferroelectricity, superconductivity or electric field tunable dielectric constants. These properties are of great interest for potential application in new devices for communication, computing or digital memories. A major objective of the project is the development of techniques to obtain thin films of these oxide materials with unprecedented perfection. Highly-perfect materials are needed, not only for improved properties, but also to gain fundamental insights into the physics of these materials. The understanding gained in this project will be used towards the development of atomic-scale engineered film structures that make use of the unique properties of oxide materials. The project will contribute to the interdisciplinary training of graduate and undergraduate students through collaboration with theorists and training in both formal (courses and weekly seminars) and informal (shared laboratory) settings. The project will provide opportunities for internships for undergraduate students and teachers.TECHNICAL DETAILSThe goal of the proposed project is the development of highly perfect, epitaxial complex oxide thin films and heterostructures by molecular beam epitaxy (MBE). The project builds on novel oxide MBE approaches that overcome known challenges, such as oxygen deficiency, and that allow for the growth of stoichiometric films with high purity and low defect concentrations. The project focuses on technologically important perovskites, such as SrTiO3 and BaTiO3 and their solid solutions, which exhibit unique functionalities, such as ferroelectricity, superconductivity or tunable dielectric constants. The dielectric and electrical properties of insulating and conducting films are documented and, in conjunction with growth studies and physical measurements, used to establish the role of interfaces and defects in the properties of oxide films and heterostructures. The research is timely, because not only have high defect concentrations limited widespread application of these materials, but also because highly perfect films are needed for a fundamental understanding of the unique phenomena observed in oxide heterostructures. The project contributes to the interdisciplinary training of graduate and undergraduate students in advanced thin film growth and characterization of novel materials through collaborations and training in both formal (courses and seminars) and informal settings. The project provides opportunities for internships for undergraduate students and physical science teachers.

非技术描述该项目重点关注氧化物材料，这些材料表现出任何其他材料类别中没有的独特功能，例如铁电性、超导性或电场可调介电常数。 这些特性对于通信、计算或数字存储器新设备的潜在应用非常有意义。 该项目的一个主要目标是开发获得这些氧化物材料薄膜的技术，使其达到前所未有的完美。 我们需要高度完美的材料，不仅是为了改善性能，而且是为了获得对这些材料物理特性的基本了解。 在该项目中获得的理解将用于开发利用氧化物材料独特性能的原子级工程薄膜结构。 该项目将通过与理论家的合作以及正式（课程和每周研讨会）和非正式（共享实验室）环境中的培训，促进研究生和本科生的跨学科培训。 该项目将为本科生和教师提供实习机会。技术细节该项目的目标是通过分子束外延（MBE）开发高度完美的外延复杂氧化物薄膜和异质结构。 该项目建立在新型氧化物 MBE 方法的基础上，该方法克服了缺氧等已知挑战，并允许生长具有高纯度和低缺陷浓度的化学计量薄膜。 该项目重点关注技术上重要的钙钛矿，如 SrTiO3 和 BaTiO3 及其固溶体，它们表现出独特的功能，如铁电性、超导性或可调介电常数。 记录绝缘和导电薄膜的介电和电气特性，并结合生长研究和物理测量，用于确定界面和缺陷在氧化物薄膜和异质结构特性中的作用。 这项研究是及时的，因为不仅高缺陷浓度限制了这些材料的广泛应用，而且还因为需要高度完美的薄膜才能从根本上理解氧化物异质结构中观察到的独特现象。 该项目通过正式（课程和研讨会）和非正式环境中的合作和培训，促进研究生和本科生在先进薄膜生长和新型材料表征方面的跨学科培训。 该项目为本科生和物理科学教师提供实习机会。