MRI: Acquisition of an oxide molecular beam epitaxy system

MRI:获取氧化物分子束外延系统

基本信息

  • 批准号:
    1126455
  • 负责人:
  • 金额:
    $ 56.31万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2011
  • 资助国家:
    美国
  • 起止时间:
    2011-10-01 至 2014-09-30
  • 项目状态:
    已结题

项目摘要

Technical AbstractResearch programs in oxides at the University of California, Santa Barbara (UCSB) span a wide range of applications, including as dielectrics, semiconductors, thermoelectrics and memristive devices. Many of these research activities are central to interdisciplinary programs and centers and all support graduate student education and training. These programs require oxide thin films with low defect densities, high purity, compatibility with active electronic device structures, low interface trap states and near-monolayer control over layer thicknesses. To address these needs, we propose to acquire a versatile, state-of-the-art oxide molecular beam epitaxy (MBE) system that will significantly expand capabilities for the synthesis of highly-perfect oxide thin films and structures, as needed to solve key problems in the development of new devices with oxides and in the materials physics of oxide structures. The project will contribute to advancing oxide MBE through the development of approaches to address issues such as stoichiometry control and poor volatility of constituents. In keeping with the tradition of UCSB's MBE Laboratory, the proposed oxide MBE system is designed to facilitate compatibility and accessibility and will be operated as a shared facility, impacting the training of a large number of students in interdisciplinary research programs at UCSB and at collaborating institutions. Graduate students and postdoctoral scholars are the primary users and oxide MBE will be the central focus of many Ph.D. dissertations. Two development engineers provide hands-on training in MBE while formal training is provided by a graduate course and weekly MBE seminars. The oxide MBE system will significantly expand research internship opportunities offered through education programs that target undergraduate and high-school students from underrepresented minority groups.Non-Technical AbstractResearch programs in oxide materials at the University of California, Santa Barbara (UCSB) span a wide range of applications, such as new electronic devices and energy conversion. Many of these research activities are central to interdisciplinary programs and centers and all support graduate student education and training. These programs require the deposition of thin film oxides with exceptionally low defect densities and high purity, comparable to what is now standard for conventional semiconductor materials. To address these needs, we propose to acquire a versatile, state-of-the-art molecular beam epitaxy (MBE) system for the deposition of thin film oxides. In keeping with the tradition of UCSB's MBE Laboratory, the proposed oxide MBE system will be operated as a shared facility, impacting the education and training of a large number of students in a wide range of interdisciplinary research programs at UCSB and at collaborating institutions. Graduate students and postdoctoral scholars are the primary users. Two development engineers provide hands-on training in MBE while formal training is provided by a graduate course and weekly MBE seminars. The oxide MBE system will significantly expand research internship opportunities offered through education programs that target undergraduate and high-school students from underrepresented minority groups.
加州大学圣巴巴拉分校(UCSB)的氧化物研究项目涵盖了广泛的应用领域,包括作为半导体、热电和忆阻器件。 许多这些研究活动是跨学科项目和中心的核心,都支持研究生教育和培训。 这些计划要求氧化物薄膜具有低缺陷密度、高纯度、与有源电子器件结构的兼容性、低界面陷阱态和对层厚度的近单层控制。 为了满足这些需求,我们建议获得一个多功能的,最先进的氧化物分子束外延(MBE)系统,这将显着扩大高度完美的氧化物薄膜和结构的合成能力,需要解决关键问题的新设备的发展与氧化物和氧化物结构的材料物理。 该项目将通过开发解决化学计量控制和成分挥发性差等问题的方法,促进氧化物分子束外延。 为了与UCSB的MBE实验室的传统保持一致,拟议的氧化物MBE系统旨在促进兼容性和可访问性,并将作为共享设施运行,影响UCSB和合作机构跨学科研究项目的大量学生的培训。 研究生和博士后学者是主要用户,氧化物MBE将成为许多博士的中心焦点。学位论文 两名开发工程师提供MBE实践培训,而正式培训则通过研究生课程和每周MBE研讨会提供。 氧化物MBE系统将显著扩大通过教育计划提供的研究实习机会,这些教育计划的目标是来自代表性不足的少数群体的本科生和高中生。非技术摘要加州大学圣巴巴拉分校(UCSB)的氧化物材料研究计划涵盖了广泛的应用,如新的电子器件和能量转换。 许多这些研究活动是跨学科项目和中心的核心,都支持研究生教育和培训。 这些计划需要沉积具有极低缺陷密度和高纯度的薄膜氧化物,与现在传统半导体材料的标准相当。 为了满足这些需求,我们建议获得一个通用的,国家的最先进的分子束外延(MBE)系统的薄膜氧化物的沉积。 为了与UCSB的MBE实验室的传统保持一致,拟议的氧化物MBE系统将作为一个共享设施运行,影响UCSB和合作机构广泛的跨学科研究项目中大量学生的教育和培训。 研究生和博士后学者是主要用户。 两名开发工程师提供MBE实践培训,而正式培训则通过研究生课程和每周MBE研讨会提供。 氧化物MBE系统将显著扩大通过教育计划提供的研究实习机会,这些计划针对来自代表性不足的少数群体的本科生和高中生。

项目成果

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Susanne Stemmer其他文献

Grain Boundaries in Barium Strontium Titanate Thin Films: Structure, Chemistry and Influence on Electronic Properties
钛酸锶钡薄膜中的晶界:结构、化学及其对电子性能的影响
  • DOI:
    10.1023/a:1008794520909
  • 发表时间:
    2000
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Susanne Stemmer;S. Streiffer;N. D. Browning;C. Basceri;A. Kingon
  • 通讯作者:
    A. Kingon
Subcycle time-resolved study for efficient terahertz high harmonic generation in Dirac semimetal Cd3As2
狄拉克半金属 Cd3As2 中高效太赫兹高次谐波产生的子周期时间分辨研究
  • DOI:
  • 发表时间:
    2020
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Natsuki Kanda;Bing Cheng;Tatsuhiko N. Ikeda;Takuya Matsuda;Peiyu Xia;Timo Schumann;Susanne Stemmer;Jiro Itatani;N. P. Armitage;and Ryusuke Matsunaga
  • 通讯作者:
    and Ryusuke Matsunaga
Transforming a strain-stabilized ferroelectric into an intrinsic polar metal with light
利用光将应变稳定的铁电体转化为固有极性金属
  • DOI:
  • 发表时间:
    2023
  • 期刊:
  • 影响因子:
    3.7
  • 作者:
    Alon Ron;Kaveh Ahadi;D. Hickox;D. Puggioni;O. Mehio;J. Rondinelli;Susanne Stemmer;D. Hsieh
  • 通讯作者:
    D. Hsieh
ディラック半金属Cd3As2薄膜における高効率テラヘルツ高調波発生とサブサイクル分光
狄拉克半金属 Cd3As2 薄膜中的高效太赫兹谐波产生和亚循环光谱
  • DOI:
  • 发表时间:
    2020
  • 期刊:
  • 影响因子:
    0
  • 作者:
    神田夏輝;Bing Cheng;池田達彦;松田拓也;夏沛宇;Timo Schumann;Susanne Stemmer;板谷治郎;N. P. Armitage;松永隆佑
  • 通讯作者:
    松永隆佑
非線形熱方程式の複素時間における解の挙動:精度保証付き数値計算によるアプローチ
复杂时间内非线性热方程解的行为:一种使用保证精度的数值计算的方法
  • DOI:
  • 发表时间:
    2018
  • 期刊:
  • 影响因子:
    0
  • 作者:
    神田夏輝;Bing Cheng;池田達彦;松田拓也;夏沛宇;Timo Schumann;Susanne Stemmer;板谷治郎;N. P. Armitage;松永隆佑;高安亮紀
  • 通讯作者:
    高安亮紀

Susanne Stemmer的其他文献

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{{ truncateString('Susanne Stemmer', 18)}}的其他基金

E2CDA: Type II: Collaborative Research: Metal-insulator transitions for low power switching devices
E2CDA:类型 II:协作研究:低功率开关器件的金属绝缘体转换
  • 批准号:
    1740213
  • 财政年份:
    2017
  • 资助金额:
    $ 56.31万
  • 项目类别:
    Continuing Grant
MRI: Acquisition of a Versatile Cryogen-Free Dilution Refrigerator for Materials and Condensed Matter Physics Research
MRI:采购用于材料和凝聚态物理研究的多功能无制冷剂稀释制冷机
  • 批准号:
    1531389
  • 财政年份:
    2015
  • 资助金额:
    $ 56.31万
  • 项目类别:
    Standard Grant
High-Mobility Perovskite Thin Films
高迁移率钙钛矿薄膜
  • 批准号:
    1409985
  • 财政年份:
    2014
  • 资助金额:
    $ 56.31万
  • 项目类别:
    Continuing Grant
Oxide Molecular Beam Epitaxy of Highly-Perfect Thin Film Perovskites
高完美薄膜钙钛矿的氧化物分子束外延
  • 批准号:
    1006640
  • 财政年份:
    2010
  • 资助金额:
    $ 56.31万
  • 项目类别:
    Continuing Grant
Image Contrast in Atomic Resolution STEM
原子分辨率 STEM 中的图像对比度
  • 批准号:
    0804631
  • 财政年份:
    2008
  • 资助金额:
    $ 56.31万
  • 项目类别:
    Standard Grant
Materials World Network: High Frequency Response of High-permittivity Thin Films
材料世界网:高介电常数薄膜的高频响应
  • 批准号:
    0602244
  • 财政年份:
    2006
  • 资助金额:
    $ 56.31万
  • 项目类别:
    Continuing Grant
MRI: Acquisition of a Molecular Beam Epitaxy System for High-Performance Oxide Films
MRI:获取高性能氧化膜分子束外延系统
  • 批准号:
    0619698
  • 财政年份:
    2006
  • 资助金额:
    $ 56.31万
  • 项目类别:
    Standard Grant
U.S.-Germany Cooperative Research: Understanding of the Defect Chemistry of Barium Titanates for Dielectric Applications Using Electron Energy-Loss Spectroscopy
美德合作研究:利用电子能量损失光谱了解介电应用钛酸钡的缺陷化学
  • 批准号:
    0314159
  • 财政年份:
    2002
  • 资助金额:
    $ 56.31万
  • 项目类别:
    Standard Grant
CAREER: Interface Science of Functional Perovskites
职业:功能钙钛矿的界面科学
  • 批准号:
    0307914
  • 财政年份:
    2002
  • 资助金额:
    $ 56.31万
  • 项目类别:
    Continuing grant
CAREER: Interface Science of Functional Perovskites
职业:功能钙钛矿的界面科学
  • 批准号:
    0093721
  • 财政年份:
    2001
  • 资助金额:
    $ 56.31万
  • 项目类别:
    Continuing grant

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脑膜炎奈瑟菌尿道炎分支中淋菌反硝化装置的获得
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