High-Mobility Perovskite Thin Films

高迁移率钙钛矿薄膜

• 批准号: 1409985
• 负责人: Susanne Stemmer
• 金额: $ 52万
• 依托单位: University of California-Santa Barbara
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-06-01 至 2019-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1409985&HistoricalAwards=false
• 关键词: Mobility; Perovskite; Thin; Films

This project is jointly funded by the Electronic and Photonic Materials (EPM) and Ceramic (CER) Programs in the Division of Materials Research. NON-TECHNICAL DESCRIPTION:The project focuses on the development of a new class of thin film oxide semiconductors that are of great interest for applications as energy materials and for novel electronic devices. The project addresses technical challenges through basic materials studies and the development of advanced thin film deposition methods. The highly perfect films synthesized in this project impact the theoretical understanding of oxide materials. The research activities in the project contribute to the interdisciplinary training of graduate and undergraduate students in advanced thin film deposition methods and materials characterization through training in both formal (courses and weekly seminars) and informal (laboratory) settings. TECHNICAL DETAILS: The project focuses on the development of molecular beam epitaxy methods for the growth of a new class of thin film oxide semiconductors, the perovskite stannates, with the goal of achieving a high degree of materials perfection and to determine the intrinsic properties of these materials. Materials such as SrSnO3 and BaSnO3 combine high charge carrier mobilities with wide band gaps, which makes them highly interesting for applications such as transparent conducting oxides, power semiconductors, or in novel heterostructures for the integration with functional perovskites. Conditions for stoichiometric thin film growth, structure-property relationships, and the role of materials defects will be established. The project provides opportunities for two- to three-month-long, self-contained internships for undergraduate students and for interdisciplinary collaborations with materials theorists and experts in electronic devices.

该项目由材料研究部的电子和光子材料（EPM）和陶瓷（CER）项目联合资助。非技术描述：该项目专注于开发新型薄膜氧化物半导体，这种半导体对于能源材料和新型电子设备的应用具有很大的意义。 该项目通过基础材料研究和先进薄膜沉积方法的开发来解决技术挑战。 该项目中合成的高度完美的薄膜影响了对氧化物材料的理论理解。 该项目的研究活动通过正式（课程和每周研讨会）和非正式（实验室）环境中的培训，有助于研究生和本科生在先进薄膜沉积方法和材料表征方面的跨学科培训。技术细节：该项目重点开发用于生长新型薄膜氧化物半导体钙钛矿锡酸盐的分子束外延方法，目标是实现高度的材料完美并确定这些材料的固有特性。 SrSnO3 和 BaSnO3 等材料将高载流子迁移率与宽带隙结合在一起，这使得它们对于透明导电氧化物、功率半导体或用于与功能钙钛矿集成的新型异质结构等应用非常感兴趣。 将建立化学计量薄膜生长的条件、结构-性能关系以及材料缺陷的作用。该项目为本科生提供为期两到三个月的独立实习机会，并为电子设备领域的材料理论家和专家提供跨学科合作的机会。

项目成果

Carbon impurity concentrations in BaSnO 3 films grown by molecular beam epitaxy using a tin oxide source

使用氧化锡源通过分子束外延生长的 BaSnO 3 薄膜中的碳杂质浓度

• DOI: 10.1116/6.0000122
• 发表时间: 2020
• 期刊: Journal of Vacuum Science & Technology A
• 影响因子: 2.9
• 作者: Wu, Wangzhou;Combs, Nicholas G.;Mates, Thomas E.;Stemmer, Susanne
• 通讯作者: Stemmer, Susanne

Stoichiometry control in molecular beam epitaxy of BaSnO3

BaSnO3 分子束外延的化学计量控制

• DOI: 10.1103/physrevmaterials.4.014604
• 发表时间: 2020
• 期刊: Physical Review Materials
• 影响因子: 3.4
• 作者: Combs, Nicholas G.;Wu, Wangzhou;Stemmer, Susanne
• 通讯作者: Stemmer, Susanne