High-Mobility Perovskite Thin Films

高迁移率钙钛矿薄膜

• 批准号: 1409985
• 负责人: Susanne Stemmer
• 金额: $ 52万
• 依托单位: University of California-Santa Barbara
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-06-01 至 2019-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1409985&HistoricalAwards=false
• 关键词: Mobility; Perovskite; Thin; Films

This project is jointly funded by the Electronic and Photonic Materials (EPM) and Ceramic (CER) Programs in the Division of Materials Research. NON-TECHNICAL DESCRIPTION:The project focuses on the development of a new class of thin film oxide semiconductors that are of great interest for applications as energy materials and for novel electronic devices. The project addresses technical challenges through basic materials studies and the development of advanced thin film deposition methods. The highly perfect films synthesized in this project impact the theoretical understanding of oxide materials. The research activities in the project contribute to the interdisciplinary training of graduate and undergraduate students in advanced thin film deposition methods and materials characterization through training in both formal (courses and weekly seminars) and informal (laboratory) settings. TECHNICAL DETAILS: The project focuses on the development of molecular beam epitaxy methods for the growth of a new class of thin film oxide semiconductors, the perovskite stannates, with the goal of achieving a high degree of materials perfection and to determine the intrinsic properties of these materials. Materials such as SrSnO3 and BaSnO3 combine high charge carrier mobilities with wide band gaps, which makes them highly interesting for applications such as transparent conducting oxides, power semiconductors, or in novel heterostructures for the integration with functional perovskites. Conditions for stoichiometric thin film growth, structure-property relationships, and the role of materials defects will be established. The project provides opportunities for two- to three-month-long, self-contained internships for undergraduate students and for interdisciplinary collaborations with materials theorists and experts in electronic devices.

该项目由材料研究部中的电子和光子材料（EPM）和陶瓷（CER）计划共同资助。非技术描述：该项目的重点是开发新的薄膜氧化物半导体，这些氧化物半导体对于能量材料和新型电子设备引起了极大的兴趣。 该项目通过基本材料研究和高级薄膜沉积方法的发展解决了技术挑战。 该项目中合成的高度完美的电影会影响氧化物材料的理论理解。 该项目的研究活动有助于通过正式（课程和每周一次的研讨会）和非正式（实验室）设置进行高级薄膜沉积方法和材料表征的研究生和本科生的跨学科培训。技术细节：该项目着重于开发分子束外延方法，用于生长一类新的薄膜氧化物半导体，即钙钛矿stannates，目的是实现高度的材料强度并确定这些材料的内在特性。 SRSNO3和BASNO3之类的材料将高电荷载体迁移率与宽带间隙相结合，这使得它们在诸如透明导电氧化物，功率半导体或新型异质结构等应用中非常有趣，以与功能性钙钛矿集成。 将建立化学计量薄膜生长，结构特性关系以及材料缺陷的作用的条件。该项目为本科生和材料理论家和电子设备专家的跨学科合作提供了为期两到三个月的独立实习机会的机会。

项目成果

Carbon impurity concentrations in BaSnO 3 films grown by molecular beam epitaxy using a tin oxide source

使用氧化锡源通过分子束外延生长的 BaSnO 3 薄膜中的碳杂质浓度

• DOI: 10.1116/6.0000122
• 发表时间: 2020
• 期刊: Journal of Vacuum Science & Technology A
• 影响因子: 2.9
• 作者: Wu, Wangzhou;Combs, Nicholas G.;Mates, Thomas E.;Stemmer, Susanne
• 通讯作者: Stemmer, Susanne

Stoichiometry control in molecular beam epitaxy of BaSnO3

BaSnO3 分子束外延的化学计量控制

• DOI: 10.1103/physrevmaterials.4.014604
• 发表时间: 2020
• 期刊: Physical Review Materials
• 影响因子: 3.4
• 作者: Combs, Nicholas G.;Wu, Wangzhou;Stemmer, Susanne
• 通讯作者: Stemmer, Susanne