E2CDA: Type II: Collaborative Research: Metal-insulator transitions for low power switching devices

该项目的重点是新的氧化物材料，可能使新一代电子设备用于计算。该项目将为研究生和本科生提供新的电子设备、材料和电路方面的跨学科培训。他们的培训将通过加州大学圣巴巴拉分校(UCSB)和俄亥俄州立大学(OSU)调查小组之间的密切合作和学生交流来促进。UCSB拥有多样化的本科生人口，是一所为少数族裔/拉美裔服务的机构。与行业利益相关者的定期电话会议和相关活动将确保向行业传授知识，并让参加会议的学生了解与将新材料和设备过渡到新兴技术相关的事项。利用电场来控制氧化物材料独特的电学性质，特别是大量改变其电阻的能力，将是一种新型的电子器件。这些设备将被研究它们作为用于计算的电流晶体管设备的替代品的潜力，这些晶体管设备基于传统的半导体材料，如硅。该项目的动机是独特的机会，包括突然切换的可能性和切换所需能源的减少。UCSB的材料科学家和俄亥俄州立大学的电气工程师之间的密切合作将专注于优化氧化物材料、他们的科学理解及其使用电场的控制，并建立与应用相关的设备特性。该项目的成果将有助于开发一种尚未得到充分探索的固态电子技术。

The project focuses on new oxide materials that may enable a new generation of electronic devices for computing. The project will offer interdisciplinary training of graduate and undergraduate students in new electronic devices, materials, and circuits. Their training will be fostered by close collaboration and student exchanges between the investigators' groups at the University of California, Santa Barbara (UCSB) and Ohio State University (OSU). UCSB has a diverse undergraduate population and is a minority/Hispanic-serving institution. Regular phone conferences with industry stakeholders and related activities will ensure knowledge transfer to industry and expose the participating students to matters relevant to the transitioning of new materials and devices into emergent technologies. Novel electronic devices will be realized that employ electric fields to control the unique electronic properties of oxide materials, in particular, their ability to change the electrical resistance by a large amount. These devices will be investigated for their potential as alternatives to current transistor devices used for computing, which are based on conventional semiconductor materials, such as silicon. The project is motivated by unique opportunities, including the potential for abrupt switching and a reduction in the energy that is required to switch. Close collaboration between materials scientists at UCSB and electrical engineers at OSU will focus on optimizing oxide materials, their scientific understanding, and their control using electric fields, and establishing the device characteristics relevant for applications. The results from this project will contribute to a solid-state electronics technology that has been underexplored.