Intersubband Ultrafast All-Optical Switches from Wide Band Gap II-VI Semiconductors
宽带隙 II-VI 半导体的子带间超快全光开关
基本信息
- 批准号:1028364
- 负责人:
- 金额:$ 28.59万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2010
- 资助国家:美国
- 起止时间:2010-09-15 至 2014-08-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The objective of this research is to develop ultrafast all-optical switches, which are key components for the next generation optical communication networks. The approach is to utilize ultrafast carrier relaxation in intersubband transitions in wide band gap II-VI semiconductor quantum wells.Intellectual Merit: The proposed material systems have the potential to overcome many of the disadvantages associated with the materials currently used for ultrafast all-optical switches. The knowledge gained and the technology developed through the proposed research will not only enrich the spectrum of available materials for photonic devices used in telecommunication networks, but may also lead to new important applications of the proposed materials. In addition to producing devices with better performance, the outcome of the research advances the understanding of material properties of II-VI low-dimensional systems, which may lead to the discovery of new scientific phenomena.Broader Impact: The devices based on the proposed materials, if commercialized and implemented, will greatly increase the data transmission rate of telecommunication networks. The proposed research will have a substantial societal impact because multimedia and data communication are now an integral part of daily lives. The proposed research program is also poised to have extensive educational and outreach impact. Particular effort will be devoted to increase the number of students from underrepresented and disadvantaged groups in science and engineering. The students involved in the research will acquire training and knowledge in a competitive field and thus will be better prepared to enter the workforce with highly valued skills.
本研究的目标是开发超快速全光开关,这是下一代光通信网络的关键部件。该方法是利用超快载流子弛豫在宽带隙II-VI半导体量子威尔斯wells.Intellectual优点:所提出的材料系统有可能克服许多与目前用于超快全光开关的材料相关的缺点。通过拟议的研究获得的知识和开发的技术不仅将丰富电信网络中使用的光子器件的可用材料谱,而且还可能导致拟议材料的新的重要应用。除了生产性能更好的器件外,研究成果还促进了对II-VI族低维系统材料特性的理解,这可能会导致新的科学现象的发现。更广泛的影响:如果商业化和实施,基于拟议材料的器件将大大提高电信网络的数据传输速率。拟议的研究将产生重大的社会影响,因为多媒体和数据通信现在是日常生活中不可或缺的一部分。拟议中的研究计划也将产生广泛的教育和推广影响。将特别努力增加理工科中代表性不足和处境不利群体的学生人数。参与研究的学生将获得竞争领域的培训和知识,从而更好地准备进入具有高度价值的技能的劳动力市场。
项目成果
期刊论文数量(0)
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会议论文数量(0)
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Aidong Shen其他文献
Longitudinal Dipole Modes of AuNRs for Photocatalytic Enhancement of Ultrathin Rutile TiO2 Nanosheets
AuNRs 的纵向偶极模式用于光催化增强超薄金红石 TiO2 纳米片
- DOI:
10.1007/s11664-020-08275-8 - 发表时间:
2020-07 - 期刊:
- 影响因子:2.1
- 作者:
Rongpeng Fu;Lidong Yu;Bingsheng Li;Li;Zhiguo Liu;Aidong Shen - 通讯作者:
Aidong Shen
Laser-MBE Improving growth of β-Ga<sub>2</sub>O<sub>3</sub> films by introducing a Homo-Amorphous nucleation seed layer for solar-blind deep UV photodetector applications
- DOI:
10.1016/j.mseb.2024.117890 - 发表时间:
2025-03-01 - 期刊:
- 影响因子:
- 作者:
Dongyu Song;Zhe Wu;Weizhe Cui;Rongpeng Fu;Shihao Fu;Yuefei Wang;Bingsheng Li;Aidong Shen;Yichun Liu - 通讯作者:
Yichun Liu
Enhanced performance UV photodetectors based on the emβ/em-Gasub2/subosub3/sub/GaN photodiode of the reversed substitution growth with introduction nucleation layer of GaON by oxygen plasma treatment
基于通过氧等离子体处理引入GaON成核层的反向替代生长的β -Ga₂O₃/GaN光电二极管的高性能紫外光电探测器
- DOI:
10.1016/j.mtphys.2025.101729 - 发表时间:
2025-05-01 - 期刊:
- 影响因子:9.700
- 作者:
Jiale Zhang;Yurui Han;Yuefei Wang;Shihao Fu;Yiping Miao;Rongpeng Fu;Weizhe Cui;Zhe Wu;Bingsheng Li;Aidong Shen;Yichun Liu - 通讯作者:
Yichun Liu
Ultrahigh Responsivity Self-powered Solar-blind Photodetector Based on Centimeter-Sized β-Ga2O3/Polyaniline Heterojunction
基于厘米级β-Ga2O3/聚苯胺异质结的超高响应度自供电日盲光电探测器
- DOI:
10.1039/c9nr09095a - 发表时间:
- 期刊:
- 影响因子:6.7
- 作者:
Yuefei Wang;Li Li;Hebin Wang;Longxing Su;Hongyu Chen;Wanpeng Bian;Jiangang Ma;Bingsheng Li;Zhiguo Liu;Aidong Shen - 通讯作者:
Aidong Shen
High-performance solar-blind photodetector of β-Gasub2/subOsub3/sub grown on sapphire with embedding an ultra-thin AlN buffer layer
在蓝宝石上生长并嵌入超薄氮化铝缓冲层的β-Ga₂O₃高性能日盲光电探测器
- DOI:
10.1016/j.jallcom.2024.176156 - 发表时间:
2024-11-15 - 期刊:
- 影响因子:6.300
- 作者:
Zhe Wu;Yuefei Wang;Youheng Song;Shihao Fu;Weizhe Cui;Chong Gao;Danyang Xia;Yurui Han;Bingsheng Li;Aidong Shen;Yichun Liu - 通讯作者:
Yichun Liu
Aidong Shen的其他文献
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