Intrinsically-Compensated Ultra-High-Q Silicon Resonators

本质补偿超高 Q 硅谐振器

基本信息

  • 批准号:
    1057320
  • 负责人:
  • 金额:
    $ 15万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2010
  • 资助国家:
    美国
  • 起止时间:
    2010-10-01 至 2013-03-31
  • 项目状态:
    已结题

项目摘要

INTRINSICALLY-COMPENSATED ULTRA-HIGH-Q SILICON RESONATORSPROJECT SUMMARYAs MEMS technology evolves, it finds its way in an ever growing number and range of commercialapplications. In particular, silicon micromechanical resonators have the potential to replace conventionalelectronic and mechanical devices in a variety of timing, sensing and spectral processing applications,thus enabling the development of completely new products. There are, however, a number of areas wherethe performance of such resonators lags significantly behind that of currently existing discretealternatives. These areas include the sensitivity of the resonant frequency to process fluctuations, itsstability with respect to changes in temperature, and the fact that the quality factor and impedance ofcurrent silicon resonators degrades dramatically in the high UHF range (1 GHz and above). The goal ofthe proposed research is to develop and demonstrate radically new technologies that will bring theperformance of silicon MEMS resonators to a level suitable for widespread insertion into commercialapplications. Specifically, the proposed research will advance the state of silicon MEMS resonatortechnology in the following areas (intellectual merits of the proposed research):(a) Deeper understanding of intrinsic loss mechanisms in silicon, and consequent development of ultrahigh-Q silicon resonators that are completely compatible with standard IC fabrication processes, and (b)development of zero-power temperature compensation techniques based on the engineering of materialproperties and resonator geometries that avoid degradation of the Q of the resonator.Dissemination of the scientific results will take place in the form of presentations at national andinternational professional conferences, articles in technical journals, and university seminars. Technologytransfer to the commercial sector will be facilitated by the Georgia Electronic Design Center, whose goalis to sustain the technology growth of the semiconductor industry by placing an emphasis on significantlong-term research.Broader impact of the proposed researchThis effort will promote advanced research and education in the area of micro and nano-mechanicalsignal processing. Integration of research and education will be pursued through graduate andundergraduate courses developed by the PI. These courses cover the principles of micro- and nanoelectromechanicalsystem analysis and design, with an emphasis on MEMS resonators. The coursematerial is constantly updated, and will include the results of research activities that are undertaken duringthe course of the research project described in this proposal. The existing graduate level course on?Interface IC design for MEMS and Sensors? will be augmented by hands-on laboratory sessions.Involvement of undergraduate students in research and educational activities is another important task ofthis proposal. To this end, the PI will seek applicants among the participants in the SummerUndergraduate Research in Engineering/Science Program at Georgia Tech, a ten-week summer researchprogram designed to attract qualified minority students into graduate school in the fields of engineeringand science. The program has received highly favorable evaluations from past participants. It is hopedthat this unique experience will encourage these students to become applicants for graduate school inensuing years.
本征补偿超高Q硅谐振器概述随着MEMS技术的发展,它在商业应用的数量和范围不断增长。特别是,硅微机械谐振器有可能在各种定时,传感和光谱处理应用中取代传统的电子和机械设备,从而能够开发全新的产品。然而,在许多领域,这种谐振器的性能明显落后于目前现有的离散替代品。这些领域包括谐振频率对工艺波动的敏感性,其相对于温度变化的稳定性,以及当前硅谐振器的品质因数和阻抗在高UHF范围(1 GHz及以上)中急剧下降的事实。拟议研究的目标是开发和展示全新的技术,将硅MEMS谐振器的性能提高到适合广泛插入商业应用的水平。具体而言,拟议的研究将在以下领域推进硅MEMS谐振器技术的发展(建议研究的知识价值):(a)深入了解硅中的固有损耗机制,并随后开发出与标准IC制造工艺完全兼容的超高Q硅谐振器,和(B)零-基于材料特性和谐振器几何形状的工程设计的功率温度补偿技术,可避免谐振器Q值的降低。科学成果的传播将以国家级会议的形式进行。以及国际专业会议、技术期刊文章和大学研讨会。格鲁吉亚电子设计中心将促进向商业部门的技术转移,该中心的目标是通过强调长期研究来维持半导体行业的技术增长。拟议研究的更广泛影响这一努力将促进微和纳米机械信号处理领域的高级研究和教育。研究和教育的整合将通过PI开发的研究生和本科生课程进行。这些课程涵盖了微和纳米机电系统分析和设计的原则,重点是MEMS谐振器。课程材料不断更新,并将包括在本提案所述研究项目过程中开展的研究活动的结果。现有的研究生水平的课程?MEMS与传感器接口IC设计将增加动手实验室会议。参与研究和教育活动的本科生是另一个重要任务的建议。为此,PI将在格鲁吉亚理工学院夏季工程/科学本科研究项目的参与者中寻找申请人,该项目是一个为期十周的夏季研究项目,旨在吸引合格的少数族裔学生进入工程和科学领域的研究生院。该计划得到了过去参与者的高度评价。我们希望这种独特的经验将鼓励这些学生成为研究生院在随后几年的申请人。

项目成果

期刊论文数量(0)
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Farrokh Ayazi其他文献

Fingertip Strain Plethysmography: Representation of Pulse Information based on Vascular Vibration
指尖应变体积描记法:基于血管振动的脉搏信息表示
Metal-organic thin-film encapsulation for MEMS
MEMS 金属有机薄膜封装
  • DOI:
    10.1088/0960-1317/18/10/105002
  • 发表时间:
    2008
  • 期刊:
  • 影响因子:
    0
  • 作者:
    J. Fang;J. Fu;Farrokh Ayazi
  • 通讯作者:
    Farrokh Ayazi
A MEMS seismometer respiratory monitor for work of breathing assessment and adventitious lung sounds detection via deep learning
  • DOI:
    10.1038/s41598-025-93011-7
  • 发表时间:
    2025-03-15
  • 期刊:
  • 影响因子:
    3.900
  • 作者:
    Brian Sang;Haoran Wen;Greg Junek;Wendy Neveu;Lorenzo Di Francesco;Justin Romberg;Farrokh Ayazi
  • 通讯作者:
    Farrokh Ayazi
Prospects of Cuffless Pulse Pressure Estimation from a Chest-Worn Accelerometer Contact Microphone
通过胸戴式加速度计接触式麦克风进行无袖脉压估计的前景
  • DOI:
    10.22489/cinc.2023.381
  • 发表时间:
    2023
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Arash Shokouhmand;H. Wen;Samiha Khan;Joseph Puma;Amisha Patel;Philip Green;Farrokh Ayazi;Negar Ebadi
  • 通讯作者:
    Negar Ebadi
Strain Plethysmography at the Radial Artery: A Promising Technique for Cuffless Blood Pressure Estimation
桡动脉应变体积描记法:一种有前途的无袖血压估计技术

Farrokh Ayazi的其他文献

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{{ truncateString('Farrokh Ayazi', 18)}}的其他基金

CAREER: Advanced Temperature Compensation Techniques for Integrated Bulk-Mode Micro and Nano Mechanical Resonators
职业:集成体模式微纳米机械谐振器的先进温度补偿技术
  • 批准号:
    0348286
  • 财政年份:
    2004
  • 资助金额:
    $ 15万
  • 项目类别:
    Standard Grant
The Nano-Precision HARPSS-CMOS Process for RF and Sensory Microsystems
用于射频和传感微系统的纳米精度 HARPSS-CMOS 工艺
  • 批准号:
    0301900
  • 财政年份:
    2003
  • 资助金额:
    $ 15万
  • 项目类别:
    Continuing Grant

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