CSR: Medium: Computing via Monolithic Three Dimensional Assembly of Novel Floating Gate Transistors and Thin Film Semiconductors
CSR:中:通过新型浮栅晶体管和薄膜半导体的单片三维组装进行计算
基本信息
- 批准号:1065458
- 负责人:
- 金额:$ 83.97万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2011
- 资助国家:美国
- 起止时间:2011-08-01 至 2016-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Energy-proportional and low power computing, together with the increasing demands for high resiliency to random faults could benefit enormously from a "Unified Memory" - a memory cell that operate either as a dynamic cell or as a non-volatile cell, and switch seamlessly between the two states. This effort focuses on the development of such a cell based on a dual floating gate concept. The gate stack is optimized to low voltage operation. Because the dynamic storage mode relies on direct tunneling, the electric fields required are modest, and ALD methods are used to construct robust oxides, this device has potential for high endurance when operating in the dynamic storage mode. The device has a relatively low leakage compared to a DRAM cell and thus needs less frequent refreshing. The read is fast - almost SRAM speeds - and non-destructive, reducing power needs. Conversion between dynamic and non-volatiles modes is very fast - an entire row at a time, and consumes a lot less power than interfacing to a solid-state drive. The device can simultaneously store a non-volatile bit with a different volatile bit enabling fast in-situ check-pointing and rollback or state-saving to improve error resiliency.
能量比例和低功率计算,以及对随机故障的高弹性的日益增长的需求,都可以极大地受益于“统一存储器”--一种存储单元,作为动态单元或非易失性单元运行,并在两种状态之间无缝切换。这项工作的重点是基于双浮动栅极概念的这种单元的开发。栅极堆叠被优化为低电压操作。由于动态存储模式依赖于直接隧穿,所需电场适中,并且使用ALD方法来构建坚固的氧化物,因此该器件在动态存储模式下工作时具有高耐久性的潜力。与DRAM单元相比,该器件具有相对较低的泄漏,因此需要较少的频繁刷新。读取速度很快--几乎是SRAM速度--而且是非破坏性的,降低了电力需求。动态和非易失性模式之间的转换非常快--一次转换一整行,并且比连接到固态驱动器消耗的电能少得多。该设备可以同时存储一个非易失性位和一个不同的易失性位,从而实现快速的就地检查点和回滚或状态保存,以提高错误恢复能力。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Paul Franzon其他文献
Electronic Properties of Molecular Memory Circuits on a Nanoscale Scaffold
纳米支架上分子存储电路的电子特性
- DOI:
- 发表时间:
2007 - 期刊:
- 影响因子:3.9
- 作者:
A. S. Blum;C. M. Soto;C. Wilson;C. Amsinck;Paul Franzon;B. Ratna - 通讯作者:
B. Ratna
Clocking Optimization and Distribution in Digital Systems with Scheduled Skews
- DOI:
10.1023/a:1007934922990 - 发表时间:
1997-06-01 - 期刊:
- 影响因子:1.800
- 作者:
Hong-Yean Hsieh;Wentai Liu;Paul Franzon;Ralph Cavin III - 通讯作者:
Ralph Cavin III
Paul Franzon的其他文献
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{{ truncateString('Paul Franzon', 18)}}的其他基金
PFI-TT: Embedded Radio Frequency Identification (RFID) to secure the semiconductor supply chain
PFI-TT:嵌入式射频识别 (RFID),确保半导体供应链安全
- 批准号:
2141176 - 财政年份:2022
- 资助金额:
$ 83.97万 - 项目类别:
Standard Grant
IUCRC Phase II North Carolina State University: Center for Advanced Electronics through Machine Learning [CAEML]
IUCRC 第二期北卡罗来纳州立大学:机器学习先进电子学中心 [CAEML]
- 批准号:
2137283 - 财政年份:2022
- 资助金额:
$ 83.97万 - 项目类别:
Continuing Grant
I/UCRC: Phase I: for Advanced Electronics through Machine Learning (CAEML)
I/UCRC:第一阶段:通过机器学习实现先进电子学 (CAEML)
- 批准号:
1624770 - 财政年份:2016
- 资助金额:
$ 83.97万 - 项目类别:
Continuing Grant
Collaborative Research: Planning Grant: I/UCRC for Advanced Electronics through Machine Learning
合作研究:规划补助金:I/UCRC 通过机器学习实现先进电子学
- 批准号:
1464632 - 财政年份:2015
- 资助金额:
$ 83.97万 - 项目类别:
Standard Grant
SHF: Small: AC powered digital circuits
SHF:小型:交流供电数字电路
- 批准号:
1422172 - 财政年份:2014
- 资助金额:
$ 83.97万 - 项目类别:
Standard Grant
ITR: Ultra High Density Computer Interconnect
ITR:超高密度计算机互连
- 批准号:
0219567 - 财政年份:2002
- 资助金额:
$ 83.97万 - 项目类别:
Continuing Grant
Inductance Control for On-Chip Signal Integrity
用于片上信号完整性的电感控制
- 批准号:
9988334 - 财政年份:2000
- 资助金额:
$ 83.97万 - 项目类别:
Continuing Grant
CISE Research Infrastructure: Experimental High Performance Computing and Communications Systems
CISE 研究基础设施:实验性高性能计算和通信系统
- 批准号:
9703090 - 财政年份:1997
- 资助金额:
$ 83.97万 - 项目类别:
Continuing Grant
NSF Young Investigator: Advanced Interconnect and Display Approaches
NSF 青年研究员:高级互连和显示方法
- 批准号:
9357574 - 财政年份:1993
- 资助金额:
$ 83.97万 - 项目类别:
Continuing Grant
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