PFI-TT: High-Power Electronic Chip Devices Using Novel Materials and Innovative Strategies

PFI-TT：使用新型材料和创新策略的高功率电子芯片器件

• 批准号: 2329786
• 负责人: Iftikhar Ahmad
• 金额: $ 54.99万
• 依托单位: University of South Carolina at Columbia
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2023
• 资助国家: 美国
• 起止时间: 2023-09-01 至 2025-08-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2329786&HistoricalAwards=false
• 关键词: PFI; TT; Power; Electronic; Chip

The broader impact/commercial potential of this Partnerships for Innovation - Technology Translation (PFI-TT) project is related to the development of an electronic chip device based on a relatively new material system. These devices can offer much higher efficiencies, operating voltages, switching frequencies, and operation at higher temperatures. These devices are essential for the flexible and efficient electrification of industry. The target applications for the developed devices include the transportation industry such as motor vehicles, trains, ships, planes, electrical power grids, heavy industry, and power conversion in harsh environments. The project will impact every industry segment related to power conversion, storage, and transmission – which are linked to every activity of human life. The new material employed for this project has many advantages over the existing materials but there are technical challenges in fabricating these devices. The project will use innovative strategies to exploit the advantages and diminish the disadvantages that will result in devices with size reduction, faster operation, and reduced power consumption. The efforts in this project will be geared towards the commercialization of the final product that will result in energy efficiency. The other aspect of this project is the training of future leaders to ensure the technical dominance of the USA in the world.The proposed project will help commercialize high-power electronic devices based on a newly developed growth method for producing semiconductor materials for high-power devices. Although the material system investigated in this proposal is ideal for high power/temperature applications but has very poor thermal conductivity and is harder to produce cohesively for the dimensions required to produce the devices. Thus, if these problems are not taken care of, they will result in catastrophic heating of the devices and poor device performance. To solve these problems, it is proposed to produce these materials and associated devices on a thermally conducting base. Thus, the heat generated during the device operation will be removed through the thermally conducting base that scan open applications in many industry segments as indicated above. The second problem is solved by a patent-pending approach that allows the production of high-power devices in a cohesive manner, which will result in low power loss and high efficiency. The use of new material production processes and growth on conducting base will result in devices that will have strong commercialization potential.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

这种创新合作伙伴关系的更广泛的影响/商业潜力 - 技术翻译（PFI -TT）项目与基于相对新材料系统的电子芯片设备的开发有关。这些设备可以在更高的温度下提供更高的效率，操作电压，切换频率和操作。这些设备对于行业的灵活和高效电气至关重要。开发设备的目标应用包括运输行业，例如机动车，火车，船，飞机，电力网，重工业，重工业和HARMSH环境中的电力转换。该项目将影响与电力转换，存储和传输有关的每个行业领域，这些领域与人类生活的每一个活动有关。该项目使用的新材料比现有材料具有许多优势，但是制造这些设备方面存在技术挑战。该项目将使用创新策略来利用优势并减少灾难，从而导致尺寸降低，更快运行和降低功耗的设备。该项目的努力将基于最终产品的商业化，这将导致能源效率。该项目的另一个方面是对未来的领导者进行培训，以确保美国在世界上的技术优势。拟议的项目将帮助商业化基于新开发的增长的高功率电子设备，尽管该提案中研究的材料系统非常适合高功率/温度应用，但对于高功率/温度的热量应用来说是非常差的，但很难为生产该设备生产的层次而产生凝聚力。因此，如果没有解决这些问题，它们将导致设备的灾难性加热和设备性能不佳。为了解决这些问题，提议在热导通基地上生产这些材料和相关的设备。这是，将在设备操作期间产生的热量通过热导通的基础去除，该热导电基底座在许多行业段中扫描打开应用，如上所述。第二个问题是通过申请专利的方法来解决的，该方法允许以凝聚力的方式生产高功率设备，这将导致低功率损失和高效率。使用新的材料生产过程和在指导基础上的增长将导致具有强大商业化潜力的设备。该奖项反映了NSF的法定任务，并通过使用基金会的知识分子优点和更广泛的影响来审查标准，认为通过评估被认为是珍贵的支持。