PFI-TT: High-Power Electronic Chip Devices Using Novel Materials and Innovative Strategies

PFI-TT：使用新型材料和创新策略的高功率电子芯片器件

• 批准号: 2329786
• 负责人: Iftikhar Ahmad
• 金额: $ 54.99万
• 依托单位: University of South Carolina at Columbia
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2023
• 资助国家: 美国
• 起止时间: 2023-09-01 至 2025-08-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2329786&HistoricalAwards=false
• 关键词: PFI; TT; Power; Electronic; Chip

The broader impact/commercial potential of this Partnerships for Innovation - Technology Translation (PFI-TT) project is related to the development of an electronic chip device based on a relatively new material system. These devices can offer much higher efficiencies, operating voltages, switching frequencies, and operation at higher temperatures. These devices are essential for the flexible and efficient electrification of industry. The target applications for the developed devices include the transportation industry such as motor vehicles, trains, ships, planes, electrical power grids, heavy industry, and power conversion in harsh environments. The project will impact every industry segment related to power conversion, storage, and transmission – which are linked to every activity of human life. The new material employed for this project has many advantages over the existing materials but there are technical challenges in fabricating these devices. The project will use innovative strategies to exploit the advantages and diminish the disadvantages that will result in devices with size reduction, faster operation, and reduced power consumption. The efforts in this project will be geared towards the commercialization of the final product that will result in energy efficiency. The other aspect of this project is the training of future leaders to ensure the technical dominance of the USA in the world.The proposed project will help commercialize high-power electronic devices based on a newly developed growth method for producing semiconductor materials for high-power devices. Although the material system investigated in this proposal is ideal for high power/temperature applications but has very poor thermal conductivity and is harder to produce cohesively for the dimensions required to produce the devices. Thus, if these problems are not taken care of, they will result in catastrophic heating of the devices and poor device performance. To solve these problems, it is proposed to produce these materials and associated devices on a thermally conducting base. Thus, the heat generated during the device operation will be removed through the thermally conducting base that scan open applications in many industry segments as indicated above. The second problem is solved by a patent-pending approach that allows the production of high-power devices in a cohesive manner, which will result in low power loss and high efficiency. The use of new material production processes and growth on conducting base will result in devices that will have strong commercialization potential.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

该创新-技术转化伙伴关系（PFI-TT）项目的更广泛影响/商业潜力与基于相对较新的材料系统的电子芯片设备的开发有关。这些器件可以提供更高的效率、工作电压、开关频率和更高的工作温度。这些设备对于工业的灵活和高效电气化至关重要。所开发设备的目标应用包括交通运输行业，如机动车辆、火车、船舶、飞机、电网、重工业和恶劣环境中的电力转换。该项目将影响与电力转换、存储和传输相关的每个行业领域，这些行业与人类生活的每一项活动都有联系。该项目采用的新材料比现有材料具有许多优点，但在制造这些设备方面存在技术挑战。该项目将使用创新策略来利用优势并减少缺点，从而使设备尺寸减小，运行速度更快，功耗更低。该项目的工作将着眼于最终产品的商业化，从而提高能源效率。该项目的另一个方面是培养未来的领导者，以确保美国在世界上的技术主导地位。拟议的项目将有助于基于新开发的生产大功率器件用半导体材料的生长方法的大功率电子器件的商业化。尽管在该提议中研究的材料系统对于高功率/温度应用是理想的，但是具有非常差的导热性，并且对于生产设备所需的尺寸更难以内聚地生产。因此，如果不注意这些问题，它们将导致设备的灾难性发热和设备性能差。 为了解决这些问题，提出了在导热基底上生产这些材料和相关器件。因此，在设备操作期间产生的热量将通过导热基座移除，该导热基座扫描如上所述的许多行业领域中的开放应用。第二个问题通过一种正在申请专利的方法解决，该方法允许以内聚方式生产高功率设备，这将导致低功率损耗和高效率。新材料生产工艺的使用和在导电基础上的增长将导致具有强大商业化潜力的设备。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。