High Efficiency UV-LEDs Based on Hybrid 2D/3D Materials

基于混合 2D/3D 材料的高效 UV-LED

• 批准号: 2124624
• 负责人: Iftikhar Ahmad
• 金额: $ 37.55万
• 依托单位: University of South Carolina at Columbia
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-08-01 至 2024-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2124624&HistoricalAwards=false
• 关键词: Efficiency; UV; LEDs; Based; Hybrid

The material system of aluminum-gallium-indium-nitride makes very efficient visible light emitters but still inefficient ultraviolet emitters. As a result, the ever-increasing applications of ultraviolet light emitters in healthcare, personal hygiene, and homeland security continue to be fulfilled by conventional sources that are bulky, inefficient, and toxic. This project will take a new approach; it will combine 3-dimensional (3D) materials based on aluminum-gallium-indium-nitride with 2-dimensional (2D) materials based on boron-nitride to create new hybrid materials. These hybrid materials are expected to reduce internal light emission losses to yield ultraviolet emitters that are more than three times more efficient than the current state-of-the-art. The proposed research should make it possible to replace conventional emitters with the more efficient, smaller, safer, and more economical emitter. The project will also train graduate students in order to retain US leadership in this technology, it will seek to encourage minority students to pursue science education, and it will generate interest in semiconductor research among undergraduate students and the public.Technical Description: Ultraviolet light-emitting diodes (UV-LEDs) emitting in the UV-C range (280nm – 220 nm) are widely needed but highly inefficient. The scientific objective of the proposed research is to increase the efficiency of UV-LEDs emitting at 280 nm wavelength by investigating the integration of new materials into LED structures to create the next generation of vertically conducting devices. For the last two decades, the focus of UV-LED research was mainly to improve the material quality with an aim to increase the external quantum efficiency (EQE). The EQE is the product of internal quantum efficiency (IQE), injection efficiency (IE), and light extraction efficiency (LEE). In a typical 280 nm UV-LED, the IQE and IE are around 80%, whereas the LEE is less than 5% resulting in EQE less than 4%. The proposed project aims to increase LEE by incorporating hybrids of 2D and 3D materials into the UV-LED structures so as to reduce internal absorptions and reflections. Simulations project that the proposed scheme will dramatically improve the LEE to around 48%. Thus, it should increase the EQE by more than three times relative to the average EQE (~ 10%) of state-of-the-art 280 nm UVLED emitters. Success in this project will leap the technology forward. The project entails epitaxial growth by metal-organic chemical deposition (MOCVD), device design, processing, and material/device characterizations; it will enhance our understanding and proficiency in these fields. The graduate and undergraduate students involved in the project will become experts in these techniques as they become the next generation of researchers.This project is jointly funded by the division of Electrical, Communications and Cyber Systems (ECCS), and by the Established Program to Stimulate Competitive Research (EPSCoR).This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

铝 - 印度氮化铝的材料系统使得非常有效的可见光发射器，但效率低下的紫外发射器。结果，紫外线发射器在医疗保健，个人卫生和国土安全方面的不断增长的应用程序继续受到笨重，效率低下且有毒的传统资源的实现。该项目将采用一种新的方法；它将将基于铝 - 印度氮化铝 - 氮化铝 - 二维（2D）材料的3维（3D）材料结合在一起，以硼氮化硼化物来创建新的混合材料。预计这些杂种材料将减少内部光发射损失，从而产生紫外发射器，其效率是当前最新效率的三倍以上。拟议的研究应该使更有效，更小，更安全，更经济的发射极替换常规发射器成为可能。该项目还将培训研究生，以保持美国在这项技术中的领导地位，它将寻求鼓励少数群体进行科学教育，并将引起本科生和公众对半导体研究的兴趣。技术描述：紫外线发光二极管二极管二极管（UV-LEDS（UV-LEDS）在UV-C范围内都非常需要（280nm-220n），但很广泛。拟议研究的科学目标是通过研究将新材料的整合到LED结构中，以创建下一代垂直导电设备，从而提高280 nm波长紫外线发射的效率。在过去的二十年中，紫外线领导的研究重点主要是为了提高材料质量，以提高外部量子效率（EQE）。 EQE是内部量子效率（IQE），注射效率（IE）和轻萃取效率（LEE）的乘积。在典型的280 nm紫外线下，IQE和IE约为80％，而Lee少于5％，导致EQE少于4％。拟议的项目旨在通过将2D和3D材料的杂种增加到UV领导的结构，从而减少内部施虐者和反射，从而增加LEE。模拟计划，该计划将大幅度将LEE提高到48％左右。这是相对于最先进的280 nm紫外发射器的平均均衡器（约10％）的平均均衡器（〜10％），它应该增加三倍以上。该项目的成功将跨越技术的前进。金属有机化学沉积（MOCVD），设备设计，加工和材料/设备字符的项目实体外延生长；它将增强我们在这些领域的理解和熟练程度。参与该项目的研究生和本科生将成为这些技术的专家，因为它们成为下一代研究人员。该项目由电气，通信和网络系统（ECCS）（ECCS）的部门共同资助，并由既定的计划以及刺激竞争性研究（EPSCOR）的既定计划（EPSCOR）进行了评估，这反映了NSF的众多范围，这是NSF的众多范围的支持。 标准。

项目成果

MOCVD-grown β-Ga2O3 as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor

MOCVD 生长的 β-Ga2O3 作为 AlGaN/GaN 基异质结场效应晶体管上的栅极电介质

• DOI: 10.3390/cryst13020231
• 发表时间: 2023
• 期刊: Crystals
• 影响因子: 2.7
• 作者: Hasan, Samiul;Jewel, Mohi Uddin;Crittenden, Scott R.;Lee, Dongkyu;Avrutin, Vitaliy;Özgür, Ümit;Morkoç, Hadis;Ahmad, Iftikhar
• 通讯作者: Ahmad, Iftikhar

Comparative Spectroscopic Study of Aluminum Nitride Grown by MOCVD in H2 and N2 Reaction Environment

• DOI: 10.3390/coatings12070924
• 发表时间: 2022-06
• 期刊: Coatings
• 影响因子: 3.4
• 作者: Samiul Hasan;M. Jewel;S. Karakalos;M. Gaevski;I. Ahmad

Growth evolution of high-quality MOCVD aluminum nitride using nitrogen as carrier gas on the sapphire substrate

• DOI: 10.1557/s43578-021-00387-z
• 发表时间: 2021-09-29
• 期刊: JOURNAL OF MATERIALS RESEARCH
• 影响因子: 2.7
• 作者: Hasan, Samiul;Mamun, Abdullah;Khan, Asif
• 通讯作者: Khan, Asif

Gate leakage current and threshold voltage characteristics of β-Ga2O3 passivated AlGaN/GaN based heterojunction field effect transistor

β-Ga2O3钝化AlGaN/GaN基异质结场效应晶体管的栅极漏电流和阈值电压特性

• DOI: 10.1117/12.2668236
• 发表时间: 2023
• 期刊: Gallium Nitride Materials and Devices XVIII; 124210A (2023
• 作者: Hasan, Samiul;Jewel, Mohi Uddin;Crittenden, Scott R.;Lee, Dongkyu;Avrutin, Vitaliy S.;Özgür, Ümit;Morkoç, Hadis;Ahmad, Iftikhar
• 通讯作者: Ahmad, Iftikhar

Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD

使用 MOCVD 在 c 面蓝宝石衬底上演示厚相纯 β-Ga2O3

• DOI: 10.1117/12.2661097
• 发表时间: 2023
• 期刊: Oxide-based Materials and Devices
• 作者: Jewel, Mohi Uddin;Hasan, Samiul;Crittenden, Scott R.;Avrutin, Vitaliy S.;Özgür, Ümit;Morkoç, Hadis;Ahmad, Iftikhar
• 通讯作者: Ahmad, Iftikhar