High Efficiency UV-LEDs Based on Hybrid 2D/3D Materials

基于混合 2D/3D 材料的高效 UV-LED

• 批准号: 2124624
• 负责人: Iftikhar Ahmad
• 金额: $ 37.55万
• 依托单位: University of South Carolina at Columbia
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-08-01 至 2024-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2124624&HistoricalAwards=false
• 关键词: Efficiency; UV; LEDs; Based; Hybrid

The material system of aluminum-gallium-indium-nitride makes very efficient visible light emitters but still inefficient ultraviolet emitters. As a result, the ever-increasing applications of ultraviolet light emitters in healthcare, personal hygiene, and homeland security continue to be fulfilled by conventional sources that are bulky, inefficient, and toxic. This project will take a new approach; it will combine 3-dimensional (3D) materials based on aluminum-gallium-indium-nitride with 2-dimensional (2D) materials based on boron-nitride to create new hybrid materials. These hybrid materials are expected to reduce internal light emission losses to yield ultraviolet emitters that are more than three times more efficient than the current state-of-the-art. The proposed research should make it possible to replace conventional emitters with the more efficient, smaller, safer, and more economical emitter. The project will also train graduate students in order to retain US leadership in this technology, it will seek to encourage minority students to pursue science education, and it will generate interest in semiconductor research among undergraduate students and the public.Technical Description: Ultraviolet light-emitting diodes (UV-LEDs) emitting in the UV-C range (280nm – 220 nm) are widely needed but highly inefficient. The scientific objective of the proposed research is to increase the efficiency of UV-LEDs emitting at 280 nm wavelength by investigating the integration of new materials into LED structures to create the next generation of vertically conducting devices. For the last two decades, the focus of UV-LED research was mainly to improve the material quality with an aim to increase the external quantum efficiency (EQE). The EQE is the product of internal quantum efficiency (IQE), injection efficiency (IE), and light extraction efficiency (LEE). In a typical 280 nm UV-LED, the IQE and IE are around 80%, whereas the LEE is less than 5% resulting in EQE less than 4%. The proposed project aims to increase LEE by incorporating hybrids of 2D and 3D materials into the UV-LED structures so as to reduce internal absorptions and reflections. Simulations project that the proposed scheme will dramatically improve the LEE to around 48%. Thus, it should increase the EQE by more than three times relative to the average EQE (~ 10%) of state-of-the-art 280 nm UVLED emitters. Success in this project will leap the technology forward. The project entails epitaxial growth by metal-organic chemical deposition (MOCVD), device design, processing, and material/device characterizations; it will enhance our understanding and proficiency in these fields. The graduate and undergraduate students involved in the project will become experts in these techniques as they become the next generation of researchers.This project is jointly funded by the division of Electrical, Communications and Cyber Systems (ECCS), and by the Established Program to Stimulate Competitive Research (EPSCoR).This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

氮化铝-镓-铟材料体系的可见光发射效率很高，但紫外发射效率仍然很低。因此，紫外线发射器在医疗保健、个人卫生和国土安全领域不断增加的应用继续由体积庞大、效率低下且有毒的传统光源来实现。这个项目将采用一种新的方法；它将结合基于氮化铝镓铟的三维（3D）材料和基于氮化硼的二维（2D）材料，创造出新的混合材料。这些混合材料有望减少内部光发射损失，从而产生比目前最先进的紫外线发射器效率高出三倍以上的紫外线发射器。拟议的研究应该使用更有效、更小、更安全、更经济的排放物取代传统排放物成为可能。该项目还将培养研究生，以保持美国在该技术方面的领导地位，它将寻求鼓励少数民族学生从事科学教育，并将在本科生和公众中引起对半导体研究的兴趣。技术描述：紫外发光二极管（uv - led）在UV-C范围内（280nm - 220nm）被广泛需要，但效率非常低。该研究的科学目标是通过研究将新材料集成到LED结构中，以创造下一代垂直导电器件，从而提高280 nm波长uv -LED的发射效率。近二十年来，UV-LED的研究重点主要是提高材料质量，以提高外量子效率（EQE）。EQE是内部量子效率（IQE）、注入效率（IE）和光提取效率（LEE）的乘积。在典型的280 nm UV-LED中，IQE和IE约为80%，而LEE小于5%，导致EQE小于4%。该项目旨在通过将2D和3D材料混合到UV-LED结构中来增加LEE，从而减少内部吸收和反射。仿真结果表明，所提出的方案将显着提高LEE至48%左右。因此，相对于最先进的280 nm UVLED发射器的平均EQE(~ 10%)，它应该将EQE提高三倍以上。这项工程的成功将使技术向前飞跃。该项目需要通过金属有机化学沉积（MOCVD），器件设计，加工和材料/器件表征进行外延生长；它将增强我们对这些领域的理解和熟练程度。参与该项目的研究生和本科生将成为这些技术的专家，因为他们将成为下一代的研究人员。该项目由电气、通信和网络系统部门（ECCS）和刺激竞争研究的既定计划（EPSCoR）共同资助。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

MOCVD-grown β-Ga2O3 as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor

MOCVD 生长的 β-Ga2O3 作为 AlGaN/GaN 基异质结场效应晶体管上的栅极电介质

• DOI: 10.3390/cryst13020231
• 发表时间: 2023
• 期刊: Crystals
• 影响因子: 2.7
• 作者: Hasan, Samiul;Jewel, Mohi Uddin;Crittenden, Scott R.;Lee, Dongkyu;Avrutin, Vitaliy;Özgür, Ümit;Morkoç, Hadis;Ahmad, Iftikhar
• 通讯作者: Ahmad, Iftikhar

Comparative Spectroscopic Study of Aluminum Nitride Grown by MOCVD in H2 and N2 Reaction Environment

• DOI: 10.3390/coatings12070924
• 发表时间: 2022-06
• 期刊: Coatings
• 影响因子: 3.4
• 作者: Samiul Hasan;M. Jewel;S. Karakalos;M. Gaevski;I. Ahmad

Growth evolution of high-quality MOCVD aluminum nitride using nitrogen as carrier gas on the sapphire substrate

• DOI: 10.1557/s43578-021-00387-z
• 发表时间: 2021-09-29
• 期刊: JOURNAL OF MATERIALS RESEARCH
• 影响因子: 2.7
• 作者: Hasan, Samiul;Mamun, Abdullah;Khan, Asif
• 通讯作者: Khan, Asif

A comprehensive study of defects in gallium oxide by density functional theory

• DOI: 10.1016/j.commatsci.2022.111950
• 发表时间: 2023-02
• 期刊: Computational Materials Science
• 影响因子: 3.3
• 作者: Mohi Uddin Jewel;Samiul Hasan;I. Ahmad

Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD

使用 MOCVD 在 c 面蓝宝石衬底上演示厚相纯 β-Ga2O3

• DOI: 10.1117/12.2661097
• 发表时间: 2023
• 期刊: Oxide-based Materials and Devices
• 作者: Jewel, Mohi Uddin;Hasan, Samiul;Crittenden, Scott R.;Avrutin, Vitaliy S.;Özgür, Ümit;Morkoç, Hadis;Ahmad, Iftikhar
• 通讯作者: Ahmad, Iftikhar