Intermediates during Ammonothermal Synthesis of Crystals of Binary and Higher Metal NitrideSemiconductor Materials

二元及高级金属氮化物半导体材料晶体氨热合成过程中的中间体

• 批准号: 201484977
• 负责人: Professor Dr. Rainer Niewa
• 金额: --
• 依托单位: Institut für Anorganische Chemie (IAC)
• 依托单位国家: 德国
• 项目类别: Research Units
• 财政年份: 2011
• 资助国家: 德国
• 起止时间: 2010-12-31 至 2019-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/201484977?language=en
• 关键词: Intermediates; during; Ammonothermal; Synthesis; Crystals

The main goal of this subproject during the second project period is to deepen the knowledge about the chemical mechanisms in ammonothermal synthesis of binary metal nitride crystals acquired in the first period and to transfer the knowhow to further chemical systems. The spectrum of possible experiments under ammonothermal conditions shall be broadened via (independent) increase of maximal temperature and pressure as well as further development of liner materials.Particularly in the synthesis of GaN under ammonobasic conditions with potassium amide as mineralizer the characterization of the obtained liquid compound might be the key to the understanding of the specific chemical processes at crystal growth conditions. These investigations will be supported by studies of the sodium and potassium amido aluminates, since these compounds according to literature show a quite similar chemistry and present as solids better defined starting materials. As one result we expect further important information for the interpretation of the temperature and pressure dependent solubilities of GaN in sc-NH3 with ammonobasic mineralizers. Related issues are the in situ-studies of dissolved species and processes at the atomic/molecular level during the crystal growth in cooperation with other subprojects (TP 3, 4, 5). The generation of precise property and solubility data is a further important point (cooperation with all TPs).For the production of new materials first possible intermediates in the up to date unknown ammonothermal synthesis of the semiconductors InN and Zn3N2 will be characterized. Based on the obtained information and the advanced experimental possibilities the crystal growth of these interesting materials should be successful. In the following the synthesis of solid solutions of GaN with InN and with transition metal nitrides, e.g. ScN, and rare-earth metal nitrides,, as well as of ternary materials (e.g., ZnSiN2, ZnGeN2 und ZnSnN2 in close cooperation with TP 1) will be carried out. Also in these cases the knowledge of the soluble intermediates is of utmost importance.

在第二个项目期间，该子项目的主要目标是加深对第一阶段获得的二元金属氮化物晶体的氨合成化学机理的了解，并将专有技术转移到进一步的化学系统中。氨氧化条件下可能的实验范围将通过（独立）提高最大温度和压力以及进一步开发衬里材料而拓宽，特别是在氨氧化条件下以氨基钾为矿化剂合成GaN中，所得液体化合物的表征可能是理解晶体生长条件下特定化学过程的关键。这些研究将得到氨基铝酸钠和氨基铝酸钾研究的支持，因为根据文献，这些化合物显示出非常相似的化学性质，并且作为固体存在，更好地定义了起始物料。作为一个结果，我们期望进一步的重要信息的解释的温度和压力依赖的溶解度的GaN在SC-NH3与氨硼矿化剂。相关的问题是与其他分项目合作，在晶体生长过程中在原子/分子水平上对溶解物质和过程进行原位研究（TP 3、4、5）。精确的性质和溶解度数据的生成是另一个重要的点（与所有TP合作）。为了生产新材料，将表征迄今未知的半导体InN和Zn 3 N2的氨合成中的第一种可能的中间体。根据所获得的信息和先进的实验可能性，这些有趣的材料的晶体生长应该是成功的。在下文中，GaN与InN和与过渡金属氮化物（例如ScN）和稀土金属氮化物的固溶体以及三元材料（例如，ZnSiN 2、ZnGeN 2和ZnSnN 2将与TP 1密切合作进行。在这些情况下，了解可溶性中间体也是至关重要的。