CIF: Small: Coding for Non-Volatile Memories

CIF：小：非易失性存储器编码

• 批准号: 1116739
• 负责人: paul siegel
• 金额: $ 50万
• 依托单位: University of California-San Diego
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-09-01 至 2014-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1116739&HistoricalAwards=false
• 关键词: CIF; Small; Coding; Non; Volatile

Non-volatile data storage devices, particularly those based upon NAND flash memory and emerging phase-change memory (PCM) technologies, are revolutionizing the way we access and manipulate information. They have many attractive features compared to magnetic hard disk drives, including their compactness, shock resistance, and faster data access. Flash memory is now preferred in portable consumer electronics, and high performance solid-state drives (SSDs) are being introduced in mobile computing, enterprise storage, data warehousing, and data-intensive computing applications. Accordingly, there is a surge in interest in the refinement, development, and expanded commercial use of these non-volatile memory technologies. On the other hand, these technologies present major challenges in the areas of device reliability, endurance, and energy efficiency. These challenges can be overcome, in part, through innovative coding and data handling techniques, which is the subject of this research project. Specifically, the problems addressed include: (1) the design of efficient, error-resilient rewriting codes for single-level cell (SLC) flash memories using write-once memory (WOM) coding techniques; (2) the design of non-binary rewriting codes for multi-level cell (MLC) flash memories, as well as codes that tolerate asymmetric cell-level transitions and writing errors; (3) the development of coding techniques that mitigate the effects of heat accumulation in PCMs; and (4) the design of error-correcting codes for PCMs with stuck cells.The research involves the information-theoretic analysis of flash memory and PCM channel models, the development of novel coding schemes, and system performance evaluation. A unique aspect of the project is the use of the facilities of the Non-Volatile Systems Laboratory at UC San Diego, providing an experimental platform for device characterization and empirical performance comparisons of new coding techniques and architectures.

非易失性数据存储设备，特别是那些基于NAND闪存和新兴相变存储器（PCM）技术的非易失性数据存储设备，正在彻底改变我们访问和操纵信息的方式。与磁性硬盘驱动器相比，它们具有许多吸引人的功能，包括紧凑性，抗震性和更快的数据访问速度。闪存现在在便携式消费电子产品中是优选的，并且高性能固态驱动器（SSD）正在移动的计算、企业存储、数据仓库和数据密集型计算应用中引入。因此，对这些非易失性存储器技术的改进、开发和扩展商业用途的兴趣激增。另一方面，这些技术在设备可靠性、耐用性和能源效率方面提出了重大挑战。这些挑战可以通过创新的编码和数据处理技术部分克服，这是本研究项目的主题。具体而言，所解决的问题包括：（1）使用一次写入存储器（WOM）编码技术的用于单级单元（SLC）闪速存储器的高效的、错误恢复的重写代码的设计;（2）用于多级单元（MLC）闪速存储器的非二进制重写代码的设计，以及容忍非对称单元级转换和写入错误的代码的设计;（3）发展可减轻PCM中热累积效应的编码技术;（4）设计适用于有卡胞的PCM的错误校正码。研究包括快闪记忆体和PCM通道模型的信息论分析、发展新的编码方案和系统性能评估。该项目的一个独特之处是使用了加州大学圣地亚哥分校非易失性系统实验室的设施，为新编码技术和架构的设备表征和经验性能比较提供了一个实验平台。