Scanning tunneling microscopy and angle-resolved photoelectron spectroscopy of phase change materials (A03)

对典型相变材料Ge_2Sb_2Te_5的电学性质进行了详细的研究，包括非晶相和亚稳晶相。光电子能谱与磁输运相结合将被用来跟踪连续的开关事件后费米面的发展及其与电导率的关系，特别强调拓扑表面态的作用。扫描隧道光谱将被用来精确地确定亚表面缺陷的配置及其在切换过程中的命运，使用最近建立的120 ps的时间分辨率。

The electronic properties of the prototypical phase change material Ge2Sb2Te5 will be studied in detail with-in the technolgically relevant phases, namely the amorphous and the metastable crystalline one. Photoelec-tron spectroscopy in combination with magnetotransport will be used to track the development of the Fermi surface and its relation to the conductivity after successive switching events with a special emphasis on the role of the topological surface states. Scanning tunneling spectroscopy will be used to pinpoint subsurface defect configurations and their fate during switching using the recently established time resolution of 120 ps.