Scanning tunneling microscopy and angle-resolved photoelectron spectroscopy of phase change materials (A03)

将详细研究原型相变材料Ge_2Sb_2Te_5的电子性质与技术相关的相，即非晶和亚稳结晶相。光电光谱结合磁输运将被用来跟踪费米表面的发展及其与连续开关事件后的电导率的关系，特别强调拓扑表面状态的作用。扫描隧道光谱将被用来查明次表面缺陷配置和他们的命运在切换过程中使用最近建立的时间分辨率为120 ps。

The electronic properties of the prototypical phase change material Ge2Sb2Te5 will be studied in detail with-in the technolgically relevant phases, namely the amorphous and the metastable crystalline one. Photoelec-tron spectroscopy in combination with magnetotransport will be used to track the development of the Fermi surface and its relation to the conductivity after successive switching events with a special emphasis on the role of the topological surface states. Scanning tunneling spectroscopy will be used to pinpoint subsurface defect configurations and their fate during switching using the recently established time resolution of 120 ps.