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Silicon Nanowire High-Frequency Field-Effect Transistors - Novel Device Designs and Characterization Techniques

Silicon Nanowire High-Frequency Field-Effect Transistors - Novel Device Designs and Characterization Techniques
硅纳米线高频场效应晶体管 - 新颖的器件设计和表征技术
批准号:
1128021
负责人:
Abhishek Motayed
金额:
$33.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2011
资助国家:
美国
项目状态:
已结题
起止时间:
2011-08-15 至 2015-03-31

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中文摘要
翻译
智力优势:该项目将解决两个重要方面的NW场效应晶体管-器件设计和表征技术,其目标是演示硅NW场效应晶体管的操作在1?4 GHz范围。在此范围内工作的基于纳米线的HF晶体管可能会在柔性/可穿戴/可植入电子产品,医疗诊断/成像,遥感,微型RFID等领域产生变革性的影响。所采用的研究方法一般足以与不同的纳米线材料系统相关。这项研究将首次解决根本问题?我们能用自下而上的方法生长硅纳米线得到高速器件吗?同样,本研究将调查各种新型NW器件设计对其HF性能的影响。更广泛的影响:该项目的成功完成将推进我们对硅纳米线晶体管基本高频工作极限的理解。拟议的研究的性质是这样的,从它获得的知识可以很容易地纳入研究生水平的课程。PI计划引入两个小型课程模块:1)纳米线晶体管的制造课程ENEE 719 A-微电子学高级主题:纳米结构制造技术和2)纳米线晶体管的器件物理课程ENEE 601 -半导体器件技术。这两个模块将向学生展示纳米半导体器件的最新研究成果,同时广泛传播从研究中获得的知识。
英文摘要
Intellectual Merit: This project will address the two important aspects of NW FETs - device designs and characterization techniques, with a goal to demonstrate the operation of SiNW FETs in the 1 ? 4 GHz range. Nanowire based HF transistors operating in this range could have transformative impacts in the fields of flexible/wearable/implantable electronics, medical diagnostics/imaging, remote sensing, micro-RFID, etc. The adopted research methodology is general enough to be relevant for different nanowire material systems. This study for the first time would address the fundamental question ? can we get high-speed devices using SiNWs grown by bottom-up methods? Similarly, this study will investigate the effect of various novel NW device designs on their HF performances. Broader Impact: Successful completion of this project will advance our understanding of the fundamental high-frequency operating limits of SiNW transistors. The nature of the proposed research is such that the knowledge gained from it can be readily incorporated into graduate level curriculum. The PIs have planned to introduce two small course modules: 1) Fabrication of Nanowire Transistors for the course ENEE 719A -Advanced Topics in Microelectronics: Nanostructure Fabrication Technology and 2) Device Physics of Nanowire Transistors for the course ENEE 601 -Semiconductor Devices & Technology. These two modules will expose the students to the latest research results in nanoscale semiconductor devices while broadly disseminating the knowledge gained from the research.
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