Silicon Nanowire High-Frequency Field-Effect Transistors - Novel Device Designs and Characterization Techniques

硅纳米线高频场效应晶体管 - 新颖的器件设计和表征技术

• 批准号: 1128021
• 负责人: Abhishek Motayed
• 金额: $ 33万
• 依托单位: University of Maryland, College Park
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-08-15 至 2015-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1128021&HistoricalAwards=false
• 关键词: Silicon; Nanowire; Frequency; Field; Effect

Intellectual Merit: This project will address the two important aspects of NW FETs - device designs and characterization techniques, with a goal to demonstrate the operation of SiNW FETs in the 1 ? 4 GHz range. Nanowire based HF transistors operating in this range could have transformative impacts in the fields of flexible/wearable/implantable electronics, medical diagnostics/imaging, remote sensing, micro-RFID, etc. The adopted research methodology is general enough to be relevant for different nanowire material systems. This study for the first time would address the fundamental question ? can we get high-speed devices using SiNWs grown by bottom-up methods? Similarly, this study will investigate the effect of various novel NW device designs on their HF performances. Broader Impact: Successful completion of this project will advance our understanding of the fundamental high-frequency operating limits of SiNW transistors. The nature of the proposed research is such that the knowledge gained from it can be readily incorporated into graduate level curriculum. The PIs have planned to introduce two small course modules: 1) Fabrication of Nanowire Transistors for the course ENEE 719A -Advanced Topics in Microelectronics: Nanostructure Fabrication Technology and 2) Device Physics of Nanowire Transistors for the course ENEE 601 -Semiconductor Devices & Technology. These two modules will expose the students to the latest research results in nanoscale semiconductor devices while broadly disseminating the knowledge gained from the research.

智能优点：该项目将讨论NW FET的两个重要方面--器件设计和表征技术，目的是演示SiNW FET在1？4 GHz范围内的工作。在这个范围内工作的基于纳米线的高频晶体管可能会在柔性/可穿戴/可植入电子设备、医疗诊断/成像、遥感、微型RFID等领域产生革命性的影响。所采用的研究方法足够普遍，足以适用于不同的纳米线材料系统。这项研究将第一次解决这个根本问题？我们能使用自下而上方法生长的SiNW来获得高速器件吗？同样，本研究将研究各种新颖的NW器件设计对其高频性能的影响。更广泛的影响：该项目的成功完成将促进我们对SiNW晶体管基本高频工作极限的理解。拟议研究的性质是，从研究中获得的知识可以很容易地纳入研究生课程。PIS计划引入两个小的课程模块：1)为课程Enee 719A-微电子学高级主题：纳米结构制造技术制造纳米线晶体管；2)为课程Enee 601-半导体器件与放大技术提供纳米线晶体管的器件物理。这两个模块将使学生接触到纳米级半导体器件的最新研究成果，同时广泛传播从研究中获得的知识。