Correlate transport properties with edge structure in suspended graphene nanoribbon field effect transistors

将悬浮石墨烯纳米带场效应晶体管的传输特性与边缘结构相关联

• 批准号: 1128297
• 负责人: Zhixian Zhou
• 金额: $ 30万
• 依托单位: Wayne State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-09-01 至 2015-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1128297&HistoricalAwards=false
• 关键词: Correlate; transport; properties; edge; structure

The objective of this proposal is to develop a fundamental understanding of the role of edge effects inthe electronic and transport properties of graphene nanoribbon field effect transistors (GNR FETs).Intellectual Merit: This research will ascertain the significance of ideal, atomically smooth edges forGNR FETs, and thus will help to establish their ultimate intrinsic performance limit. A new approachwill be used to carry out combined electrical transport and scanning tunneling microscopy/ spectroscopymeasurements in situ to understand the edge effects on the electronic and transport properties of GNR FETs.The proposed devices will i) enable the identification and isolation of the effects of edges andsurface impurities on important device characteristics, such as the carrier mobility and band gap; and ii)elucidate the correlation between the detailed edge and electronic structures and device characteristicsin GNR FETs.Broader Impacts: As the advance of GNR based nanoelectronics critically relies on the detailedunderstanding of the edge effects, the prototype devices developed in this project and the knowledgegained will help to pave the way for the next generation of all carbon electronics. The project tightlyintegrates research with graduate and undergraduate education and community outreach. Graduatestudents will play a pivotal role in this research, obtaining important training for their future scientificand technical careers. A special program to enhance K-12 education in science and mathematics will beinstituted to promote the diversity of the future science and engineering workforce.

该提案的目的是发展一个基本的理解的边缘效应的作用在电子和输运性质的石墨烯纳米晶体管场效应晶体管（GNR FETs）的智力优点：这项研究将确定的意义，理想的，原子光滑的边缘forGNR FETs，从而将有助于建立其最终的内在性能极限。一种新的方法将被用来进行电输运和扫描隧道显微镜/光谱的联合测量，以了解对GNR FET的电子和输运特性的边缘效应。所提出的器件将：i）能够识别和隔离边缘和表面杂质对重要器件特性的影响，如载流子迁移率和带隙;以及ii）阐明GNR FET中详细的边缘和电子结构与器件特性之间的相关性。由于GNR纳米电子学的发展关键依赖于对边缘效应的详细理解，在这个项目中开发的原型设备和获得的知识将有助于为下一代全碳电子铺平道路。该项目将研究与研究生和本科生教育以及社区外展紧密结合在一起。研究生将在这项研究中发挥关键作用，为他们未来的科学和技术职业生涯获得重要的培训。一项加强K-12科学和数学教育的特别计划将被制定，以促进未来科学和工程劳动力的多样性。