Correlate transport properties with edge structure in suspended graphene nanoribbon field effect transistors

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The objective of this proposal is to develop a fundamental understanding of the role of edge effects inthe electronic and transport properties of graphene nanoribbon field effect transistors (GNR FETs).Intellectual Merit: This research will ascertain the significance of ideal, atomically smooth edges forGNR FETs, and thus will help to establish their ultimate intrinsic performance limit. A new approachwill be used to carry out combined electrical transport and scanning tunneling microscopy/ spectroscopymeasurements in situ to understand the edge effects on the electronic and transport properties of GNR FETs.The proposed devices will i) enable the identification and isolation of the effects of edges andsurface impurities on important device characteristics, such as the carrier mobility and band gap; and ii)elucidate the correlation between the detailed edge and electronic structures and device characteristicsin GNR FETs.Broader Impacts: As the advance of GNR based nanoelectronics critically relies on the detailedunderstanding of the edge effects, the prototype devices developed in this project and the knowledgegained will help to pave the way for the next generation of all carbon electronics. The project tightlyintegrates research with graduate and undergraduate education and community outreach. Graduatestudents will play a pivotal role in this research, obtaining important training for their future scientificand technical careers. A special program to enhance K-12 education in science and mathematics will beinstituted to promote the diversity of the future science and engineering workforce.