Integration of Graphene as a Work-Function-Tunable Electrode Material with Atomically Thin Layered Transition-Metal-Dichalcogenides

技术描述：本项目的目标是研究石墨烯作为原子薄层过渡金属-二硫族化合物（TMDs）的工作功能可调电极材料，并系统研究石墨烯/TMD触点的电场效应调谐以及TMD通道在低电阻欧姆触点极限下的本征电荷输运特性。为了实现研究目标，首席研究员计划1)制造具有石墨烯电极的原子级薄半导体TMD材料和器件；2)通过原子力显微镜、拉曼光谱和电输运测量表征石墨烯/TMD结；3)利用超大电容离子液体栅极研究石墨烯/TMD触点的肖特基势垒可调性；4)研究TMD通道在低阻欧姆接触极限下的电学特性；5)研究六方氮化硼封装tmd的极限材料和器件性能；6)通过联合扫描隧道显微镜/光谱和输运测量，研究起始TMD晶体中缺陷和/或杂质的性质和密度对最终材料和器件性能的影响。非技术描述：该项目旨在建立对原子薄层过渡金属-二硫族化合物作为低功耗数字电子器件通道材料的内在性能极限的基本理解。这个项目的广泛影响是通过紧密结合研究、研究生和本科教育以及社区外展工作来实现的。通过研究石墨烯/TMD触点的电场效应可调性以及TMD作为通道材料的固有材料和器件特性，将有助于为基于TMD的电子产品铺平道路。教育计划的重点是促进多样性和招收代表性不足的少数民族学生。这项综合推广计划预计将加强底特律公立学校的物理科学教育，并提高学生对大学的准备。

Technical Description: The goal of this project is to investigate graphene as a work-function tunable electrode material for atomically thin layered transition-metal-dichalcogenides (TMDs), and to systematically study the electric-field-effect tuning of the graphene/TMD contacts as well as the intrinsic charge transport properties of the TMD channel in the limit of low-resistance Ohmic contacts. To accomplish the research goal, the principle investigator plans to 1) fabricate atomically thin semiconducting TMD materials and devices with graphene electrodes; 2) characterize the graphene/TMD junction by atomic force microscopy, Raman spectroscopy, and electrical transport measurement; 3) study the Schottky barrier tunability of graphene/TMD contacts using an extremely-large-capacitance ionic liquid gate; 4) investigate the electrical properties of the TMD channel in the limit of low-resistance Ohmic contacts; 5) study the ultimate materials and device performance of hexagonal boron nitride encapsulated TMDs; and 6) investigate the influence of the nature and density of the defects and/or impurities in the starting TMD crystals on the ultimate materials and device performance by combined scanning tunneling microscopy/spectroscopy and transport measurements.Non-technical Description: The project aims to establish a fundamental understanding of the intrinsic performance limit of atomically thin layered transition-metal-dichalcogenides as channel materials for low power digital electronics. The broader impact of this project is accomplished by tightly integrating research, graduate and undergraduate education, and community outreach efforts. The knowledge gained from studying the electric-field-effect tunability of the graphene/TMD contacts and intrinsic materials and device properties of TMDs as channel materials will help to pave the way for TMD-based electronics. The emphasis of the education program is placed on promoting diversity and recruiting underrepresented minority students. The integrated outreach program is expected to enhance the physical science education in Detroit public schools and to improve the preparedness of students for college.