课题基金 / 基金详情

Integration of Graphene as a Work-Function-Tunable Electrode Material with Atomically Thin Layered Transition-Metal-Dichalcogenides

Integration of Graphene as a Work-Function-Tunable Electrode Material with Atomically Thin Layered Transition-Metal-Dichalcogenides
石墨烯作为功函数可调电极材料与原子薄层状过渡金属二硫属化物的集成
批准号:
1308436
负责人:
Zhixian Zhou
金额:
$31.52万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-07-01 至 2016-06-30

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中文摘要
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英文摘要
Technical Description: The goal of this project is to investigate graphene as a work-function tunable electrode material for atomically thin layered transition-metal-dichalcogenides (TMDs), and to systematically study the electric-field-effect tuning of the graphene/TMD contacts as well as the intrinsic charge transport properties of the TMD channel in the limit of low-resistance Ohmic contacts. To accomplish the research goal, the principle investigator plans to 1) fabricate atomically thin semiconducting TMD materials and devices with graphene electrodes; 2) characterize the graphene/TMD junction by atomic force microscopy, Raman spectroscopy, and electrical transport measurement; 3) study the Schottky barrier tunability of graphene/TMD contacts using an extremely-large-capacitance ionic liquid gate; 4) investigate the electrical properties of the TMD channel in the limit of low-resistance Ohmic contacts; 5) study the ultimate materials and device performance of hexagonal boron nitride encapsulated TMDs; and 6) investigate the influence of the nature and density of the defects and/or impurities in the starting TMD crystals on the ultimate materials and device performance by combined scanning tunneling microscopy/spectroscopy and transport measurements.Non-technical Description: The project aims to establish a fundamental understanding of the intrinsic performance limit of atomically thin layered transition-metal-dichalcogenides as channel materials for low power digital electronics. The broader impact of this project is accomplished by tightly integrating research, graduate and undergraduate education, and community outreach efforts. The knowledge gained from studying the electric-field-effect tunability of the graphene/TMD contacts and intrinsic materials and device properties of TMDs as channel materials will help to pave the way for TMD-based electronics. The emphasis of the education program is placed on promoting diversity and recruiting underrepresented minority students. The integrated outreach program is expected to enhance the physical science education in Detroit public schools and to improve the preparedness of students for college.
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Collaborative Research: Wavelength-Scalable, Room-Temperature Mid-Infrared Photodetectors Based on Multiphoton-Assisted Tunneling
  • 批准号:
    2210861
  • 项目类别:
    Standard Grant
  • 资助金额:
    $15.03万
  • 财政年份:
    2022
  • 负责人:
    Zhixian Zhou
  • 依托单位:
Pin down the mechanism of Fermi-level pinning in metal/2D-semiconductor contacts
  • 批准号:
    2004445
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $29.99万
  • 财政年份:
    2020
  • 负责人:
    Zhixian Zhou
  • 依托单位:
Correlate transport properties with edge structure in suspended graphene nanoribbon field effect transistors
  • 批准号:
    1128297
  • 项目类别:
    Standard Grant
  • 资助金额:
    $30.0万
  • 财政年份:
    2011
  • 负责人:
    Zhixian Zhou
  • 依托单位:
国内基金
海外基金
基于MXene-Graphene异构界面相互作用的太赫兹超宽带调制机理研究
MoS2-graphene二维亚纳米通道膜构筑及溶剂传质与筛分机制研究
  • 批准号:
    22378132
  • 项目类别:
    面上项目
  • 资助金额:
    50万元
  • 批准年份:
    2023
  • 负责人:
    陈晓芳
  • 依托单位:
基于MXene-Graphene异构界面相互作用的太赫兹超宽带调制机理研究
  • 批准号:
    62375044
  • 项目类别:
    面上项目
  • 资助金额:
    54万元
  • 批准年份:
    2023
  • 负责人:
    赵陶
  • 依托单位:
转角In2Se3/Graphene异质结的界面调控及电子性质研究