Electrically pumped microcavity polariton lasers on nonpolar m-plane and semipolar GaN

非极性 m 面和半极性 GaN 上的电泵浦微腔极化子激光器

• 批准号: 1128489
• 负责人: Umit Ozgur
• 金额: $ 40万
• 依托单位: Virginia Commonwealth University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-09-01 至 2015-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1128489&HistoricalAwards=false
• 关键词: Electrically; pumped; microcavity; polariton; lasers

The objective of this program is to understand the fundamentals governing vertical cavity emitters and cavity polaritons leading to attunement of electrically pumped microcavity lasers and polariton lasers on nonpolar m-plane and semipolar GaN. The intellectual merit is in demonstrating a new type of gain medium and advancing microcavity technologies by developing a model system using nitride materials with large exciton binding energies, improved optical matrix elements and high hole concentrations in the nonpolar and semipolar orientations. Developing room temperature low threshold polariton lasers will require integration of high reflectivity GaN-based bottom and dielectric top reflectors, high quality nitride epitaxial heterostructures and quantum wells, and efficient contact layers and active region heterostructures supporting uniform carrier injection while preserving the strong exciton-photon coupling state. The broader impacts are the advancement of materials science and microcavity device technologies for the development of a new type of laser with significantly lower threshold compared to the vertical cavity surface emitting lasers and in providing an ideally suited multidisciplinary research environment for educating graduate and undergraduate students in the fundamentals of cutting-edge semiconductor optoelectronics and microcavity physics. The transformative applications include optical logic elements operating at much lower power levels compared to conventional Si-based electronics for ultrafast optical computing and on-chip communications with significant energy savings and therefore reduced carbon emissions. Undergraduate students, recruited through existing summer research programs, will be included in this research and educational infrastructure will be enhanced by web-based efforts and by incorporating the fundamental discoveries into the graduate curriculum.

该计划的目标是了解控制垂直腔发射器和腔极化子的基本原理，从而实现非极性 m 平面和半极性 GaN 上的电泵微腔激光器和极化子激光器的调谐。其智力优势在于通过开发使用具有大激子结合能、改进的光学矩阵元件以及非极性和半极性方向的高空穴浓度的氮化物材料的模型系统来展示新型增益介质和先进的微腔技术。开发室温低阈值极化子激光器需要集成高反射率的基于GaN的底部和电介质顶部反射器、高质量氮化物外延异质结构和量子阱，以及支持均匀载流子注入同时保持强激子-光子耦合状态的高效接触层和有源区异质结构。更广泛的影响是材料科学和微腔器件技术的进步，用于开发与垂直腔表面发射激光器相比门槛显着降低的新型激光器，并为研究生和本科生提供尖端半导体光电子学和微腔物理学基础知识的理想多学科研究环境。与传统的硅基电子器件相比，这些变革性应用包括以低得多的功率运行的光逻辑元件，用于超快光计算和片上通信，从而显着节省能源，从而减少碳排放。通过现有夏季研究项目招募的本科生将被纳入这项研究，教育基础设施将通过基于网络的努力以及将基本发现纳入研究生课程来加强。