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MRI: Acquisition of a Portable SEM with EDS to Investigate Damages to Metallization Structure and its Interface with WBG Semiconductor in Harsh Environments.

MRI: Acquisition of a Portable SEM with EDS to Investigate Damages to Metallization Structure and its Interface with WBG Semiconductor in Harsh Environments.
MRI:购买带有 EDS 的便携式 SEM,用于研究恶劣环境中金属化结构及其与 WBG 半导体界面的损坏情况。
批准号:
1337141
负责人:
Adetayo Adedeji
金额:
$23.74万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-09-01 至 2015-08-31

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中文摘要
翻译
DMR-1337141 Adedeji Technical来自重大研究仪器计划的该奖项支持伊丽莎白城州立大学(ECSU)收购带有能量色散光谱(EDS)检测器的便携式扫描电子显微镜(SEM)。该仪器将用于研究高温和高能质子辐照对宽带隙(WBG)半导体表面器件特性的影响。该仪器将使研究人员能够开发一种先进的金属化方案,最大限度地减少由于恶劣环境造成的表面变形。宽带隙半导体由于其固有特性而能够在恶劣环境中存活。原则上,基于WBG半导体的器件可以在以下环境中工作:(a)在汽车发动机组内部或附近(为了有效使用燃料和减少由于不完全气体燃烧造成的大气污染);(B)用于核电站的控制电子设备;(c)用于空间探索的传感器电子设备等等。目的是研究和探索导电三元耐火阻挡层,以最大限度地减少高温(500至800摄氏度之间)和高能质子辐照在长时间暴露下对接触金属和半导体表面的损伤。 该设备将是ECSU的第一台电子显微镜。因此,它将成为代表性不足和服务不足的STEM学生的重要教育工具。它也将成为北卡罗来纳州东北部地区K-12科学教师和学生的重要外展工具。该奖项来自主要研究仪器计划,支持伊丽莎白城州立大学(ECSU)收购带有能量色散光谱(EDS)检测器的便携式扫描电子显微镜(SEM)。 利用扫描电子显微镜和能谱仪研究了高温高能质子辐照对宽禁带半导体表面的影响。该仪器对于能够理解和开发用于恶劣环境条件下的材料和器件的耐用和稳健的金属化方案至关重要。这种情况存在于国防和武器系统以及汽车工业中,用于气体燃烧的现场监测和来自不完全气体燃烧的环境污染物的控制。从技术到生物学的各个学科的许多教师将使用电子显微镜进行研究和教育。预计每年将有50多名本科生短期使用这些设备。每年约有5名本科生和3名研究生将定期使用该设备进行研究。该地区K-12公立学校的教师将接受培训和帮助,使用这些设备教育和激励学生从事STEM学科的职业。透过扫描电子显微镜观察样品,让学生认识一般光学显微镜所看不到的亚微米尺度、结构和图案。在ECSU与EDS的SEM将使教师之间的大学内和跨学科的研究合作增加。它还将加强与诺福克州立大学材料研究中心和弗吉尼亚州纽波特纽斯应用研究中心的合作,在那里,教师可以使用更昂贵的SEM/TEM进行详细的研究。
英文摘要
DMR - 1337141 AdedejiTechnicalThis award from the Major Research Instrumentation program supports Elizabeth City State University (ECSU) with the acquisition of Portable Scanning Electron Microscope (SEM) with Energy Dispersive Spectroscopy (EDS) detector. The instrument will be used to investigate the effects of high temperature and high energy proton irradiation on Wide Band Gap (WBG) semiconductor surface based device characteristics. This instrument will enable the researchers to develop an advanced metallization scheme that minimizes surface deformation because of the harsh environment. Wide band gap semiconductors are capable of surviving in harsh environments because of their intrinsic properties. In principle, WBG semiconductor based devices can operate in environments such as: (a) inside or in close proximity to an automotive engine block (for efficient fuel usage and reduced atmospheric pollution due to incomplete gas combustion); (b) the control electronics for nuclear power plants; (c) the sensor electronics for space exploration and more. The goal is to investigate and explore conducting ternary refractory barrier layer to minimize damages to contact metal and semiconductor surface in high temperatures (between 500 and 800 degree centigrade) and high energy proton irradiations over a long exposure time. The equipment will be the first electron microscope at ECSU. It will therefore serve as a great educational tool for underrepresented and underserved STEM students. It will also be an important outreach tool to K-12 science teachers and students in the northeastern North Carolina region.*****Non TechnocalThis award from the Major Research Instrumentation program supports Elizabeth City State University (ECSU) with the acquisition of Portable Scanning Electron Microscope (SEM) with Energy Dispersive Spectroscopy (EDS) detector. The SEM and EDS system will be used to investigate the effects of high temperature and high energy proton irradiation on Wide Band Gap (WBG) semiconductor surface based device characteristics. This instrument is essential to be able to understand and develop a durable and robust metallization scheme for materials and devices in harsh environmental conditions. Such condition exists in defense and weapons systems and in automobile industries for in-situ monitoring of gas combustion and control of environmental pollutant from incomplete gas combustion. Many faculty members across disciplines from technology to biology will be using the electron microscope for research and education. It is expected that more than 50 undergraduate students will make use of the equipment on a short-term basis per year. About 5 undergraduate students and 3 graduate students will routinely use the equipment for research per year. Teachers from the K-12 public schools in the region will be trained and aided to use the equipment to educate and motivate their students for a career in STEM disciplines. Samples will be viewed with SEM to introduce students to sub-micron length scale, structures and patterns that are not visible with common light microscope. SEM with EDS at ECSU will enable increased intra-university and interdisciplinary research collaboration between faculty members. It will also enable stronger collaboration with the center for materials research at Norfolk State University and the Applied Research Center at Newport News, Virginia where faculty may use more expensive SEM/TEM for detailed studies.
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Excellence in Research: Multi-Charge Ion Implantation of Ultra-Wide Bandgap beta-Ga2O3 Semiconductor Grown by Magnetron Sputtering
  • 批准号:
    2000174
  • 项目类别:
    Standard Grant
  • 资助金额:
    $40.0万
  • 财政年份:
    2020
  • 负责人:
    Adetayo Adedeji
  • 依托单位:
"Research Initiation Award: Fabrication and Characterization of Composite Contacts on Wide Band Gap Semiconductor for High Temperature Application in Air."
  • 批准号:
    1137470
  • 项目类别:
    Standard Grant
  • 资助金额:
    $20.0万
  • 财政年份:
    2011
  • 负责人:
    Adetayo Adedeji
  • 依托单位:
MRI: Acquisition of a sputtering system for contact metallization of WBG semiconductor for high temperature application in air ambient.
  • 批准号:
    1040200
  • 项目类别:
    Standard Grant
  • 资助金额:
    $20.47万
  • 财政年份:
    2010
  • 负责人:
    Adetayo Adedeji
  • 依托单位:
海外基金