Excellence in Research: Multi-Charge Ion Implantation of Ultra-Wide Bandgap beta-Ga2O3 Semiconductor Grown by Magnetron Sputtering

卓越研究：磁控溅射生长的超宽带隙 β-Ga2O3 半导体的多电荷离子注入

• 批准号: 2000174
• 负责人: Adetayo Adedeji
• 金额: $ 40万
• 依托单位: Elizabeth City State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2020
• 资助国家: 美国
• 起止时间: 2020-07-15 至 2023-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2000174&HistoricalAwards=false
• 关键词: Excellence; Research; Multi; Charge; Ion

Nontechnical DescriptionThis Excellence in Research (EiR) project at a minority-serving institution will support faculty research on materials, build the institutional research capacity, and train underrepresented and underserved students in materials research. This research project includes developing a reliable technique for depositing thin layers of gallium oxide, a semiconductor. This material is interesting because it has shown promise for many special defense and civilian electronic device applications, including high power microelectronic devices and harsh environment sensors. Undergraduate students with very little or no prior research experience will learn technological skills by conducting research during the regular academic year and in the summer. Five talented High School students from neighboring schools in rural northeastern North Carolina will be introduced to materials research careers each year during the summer research internship supported with this grant. Undergraduate students from a minority-serving institution will have the opportunity to conduct research with, and interact and learn from graduate students and faculty from Old Dominion University, a collaborating partner on this project.Technical DescriptionThe growth of beta-gallium oxide epilayers by the relatively inexpensive magnetron sputtering method on electrically insulating (iron-doped) and conducting (tin-doped) gallium oxide substrates is being investigated. Their structures will be characterized with various high-resolution X-ray diffraction scans. Doping of the gallium oxide layers is attained via co-sputtering with different dopant targets. Low energy laser Multi-Charge Ion (MCI) implantation used to heavily dope the top layer of the material at selected spatial locations will also be investigated. The principal investigator and student researchers will work with the co-investigator and graduate students at Old Dominion University to study MCI implantation and efficient dopant activation processes. The ultra-wide energy gap of this material implies high breakdown field strength and high tolerance for extreme conditions and harsh environments. Beta-gallium oxide semiconductor is a good candidate for high power electronic devices, solar-blind UV photodetectors, photocatalysts, gas sensors, and solar cells.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术性描述在少数民族服务机构的卓越研究（EIR）项目将支持教师对材料的研究，建立机构的研究能力，并在材料研究中培养代表性不足和服务不足的学生。该研究项目包括开发一种可靠的技术，用于沉积氧化镓（一种半导体）薄层。这种材料很有趣，因为它已显示出许多特殊国防和民用电子设备应用的前景，包括高功率微电子设备和恶劣环境传感器。很少或没有先前研究经验的本科生将通过在常规学年和夏季进行研究来学习技术技能。来自北卡罗来纳州东北部农村的邻近学校的五名才华横溢的高中生将在每年的夏季研究实习期间被介绍给材料研究职业。从少数民族服务机构的本科生将有机会进行研究，并互动和学习从研究生和教师从老自治领大学，在这个项目上的合作伙伴。技术说明β-氧化镓外延生长的相对便宜的磁控溅射法电绝缘（铁掺杂）和导电（锡掺杂）氧化镓基板正在调查。它们的结构将通过各种高分辨率X射线衍射扫描进行表征。氧化镓层的掺杂通过与不同掺杂剂靶共溅射来实现。低能量激光多电荷离子（MCI）注入用于重掺杂的材料在选定的空间位置的顶层也将进行研究。首席研究员和学生研究人员将与合作研究员和研究生在旧自治领大学研究MCI注入和有效的掺杂剂激活过程。这种材料的超宽能隙意味着高击穿场强和对极端条件和恶劣环境的高耐受性。β-氧化镓半导体是高功率电子器件、日盲紫外光探测器、光催化剂、气体传感器和太阳能电池的理想候选材料。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Transparent and passive Ta–Si–N thin films barrier layer

透明钝化Ta-Si-N薄膜阻挡层

• DOI: 10.1557/s43579-021-00127-8
• 发表时间: 2021
• 期刊: MRS Communications
• 影响因子: 1.9
• 作者: Harmon, Alexis;Robertson, Darnell;Elahi, Mehran;Kumar, Bijandra;Adedeji, Adetayo
• 通讯作者: Adedeji, Adetayo