MRI: Acquisition of a sputtering system for contact metallization of WBG semiconductor for high temperature application in air ambient.

MRI：购买用于 WBG 半导体接触金属化的溅射系统，用于空气环境中的高温应用。

• 批准号: 1040200
• 负责人: Adetayo Adedeji
• 金额: $ 20.47万
• 依托单位: Elizabeth City State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-10-01 至 2013-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1040200&HistoricalAwards=false
• 关键词: MRI; Acquisition; sputtering; system; contact

Technical Abstract: Wide Band Gap (WBG) semiconductor-based devices are capable of operating in extreme environmental conditions such as high temperatures, high radiation and reactive environments because of the intrinsic properties of the semiconductors. However, usual contacts and interconnects will fail long before the semiconductor fails in harsh environments. One of the goals of the research is to explore refractory metals, their alloys and silicides as oxidation and diffusion barrier layers to protect contacts on WBG semiconductor-based devices. This major research instrumentation award will fund the acquisition of a sputtering system at Elizabeth City State University. The sputtering system will be used to deposit high temperature barrier material in vacuum. The effectiveness and reliability of the device will depend interfacial reactions (including oxygen defects and mobility or accumulation of carbon) between vacuum sputtered barrier layer ( 100 nm thick) and contacts on WBG semiconductors (SiC, GaN, and Diamond). To physically characterize interface reactions at elevated temperatures, Rutherford Backscattering Spectrometry (RBS), Auger Electron Spectroscopy (AES), and Electron Microscopy (TEM & SEM) will be employed. The stability of the electrical characteristics of a simple schottky device will indicate the effectiveness of the barrier layer in harsh environment. Access to a sputtering system will also enable us to explore new collaborations with the center for materials research at Norfolk State University and Varicon Inc. in the field of "smart windows" for efficient energy use in buildings. For this and similar applications, solar materials called chromogenic materials (mostly doped transition metal oxide) will be deposited with the sputtering system and characterized locally and by collaborators.Non-technical Abstract: This major research instrumentation award funds the acquisition of a sputtering system at Elizabeth City State University. The sputtering system will be used to deposit high temperature metallic nano-layers (layers with thickness of about one-thousandth the thickness of human hair) in vacuum. The metallic nano-layers will be explored as barrier layer to protect devices fabricated on Wide Band Gap (WBG) semiconductors (SiC, GaN, Diamond, etc). These semiconductors have intrinsic properties that make them capable of surviving in harsh environmental conditions such as high temperature, high radiation and reactive environment. However, usual contacts will fail readily under extreme environmental conditions if not protected, limiting the WBG semiconductor-based device capability. Specialized electronic devices (including high power switches, sensors, controls and power management for aerospace and automotive industries) capable of operating at such extreme conditions can be located inside automobile engine block for more efficient fuel consumption and reduced atmospheric pollution (due to incomplete gas combustion). In ambient air at elevated temperature, reaction between adjacent layers in a composite contact metallization structure is one of the factors that will limit the reliability and effectiveness of WBG semiconductor-based devices. One of the primary goals is to study such reactions using state-of-the-art, high technology equipment for surface analysis. A simple schottky diode device with appropriate protective barrier layer will be evaluated in ambient air at high temperatures over an extended period of time. The stability of the devices electrical characteristics will imply the effectiveness of the barrier layer. Access to a sputtering system will also enable the team to explore new collaborations with the center for materials research at Norfolk State University and Varicon Inc. in the field of "smart windows" for efficient energy use in buildings. For this and similar applications, solar materials called chromogenic materials (mostly doped transition metal oxide) will be deposited with the sputtering system and characterized locally and by collaborators.

技术摘要：由于半导体的固有特性，基于宽带隙（WBG）的半导体器件能够在诸如高温、高辐射和反应环境的极端环境条件下工作。 然而，通常的接触和互连将在半导体在恶劣环境中失效之前很久就失效。 该研究的目标之一是探索难熔金属，其合金和硅化物作为氧化和扩散阻挡层，以保护基于WBG晶闸管的器件上的接触。 这项重大的研究仪器奖将资助伊丽莎白城州立大学收购溅射系统。 溅射系统将用于在真空中存款高温屏障材料。 器件的有效性和可靠性将取决于真空溅射阻挡层（100 nm厚）和WBG半导体（SiC、GaN和金刚石）上的接触之间的界面反应（包括氧缺陷和碳的迁移率或积累）。 为了物理表征高温下的界面反应，将采用卢瑟福背散射光谱法（RBS）、俄歇电子光谱法（AES）和电子显微镜（TEM SEM）。 简单肖特基器件的电特性的稳定性将指示阻挡层在恶劣环境中的有效性。 使用溅射系统也将使我们能够探索与诺福克州立大学材料研究中心和Varicon公司的新合作。在建筑物中有效使用能源的“智能窗户”领域。 对于这个和类似的应用，太阳能材料称为显色材料（主要是掺杂的过渡金属氧化物）将沉积与溅射系统，并在当地和collaborators.Non-technical特点摘要：这个主要的研究仪器奖资金在伊丽莎白城州立大学的溅射系统的收购。 溅射系统将用于在真空中沉积存款高温金属纳米层（厚度约为人类头发厚度的千分之一的层）。 金属纳米层将被探索作为阻挡层，以保护在宽带隙（WBG）半导体（SiC，GaN，金刚石等）上制造的器件。 这些半导体具有固有的特性，使它们能够在恶劣的环境条件下生存，如高温，高辐射和反应环境。 然而，如果不加以保护，通常的触点在极端环境条件下很容易失效，从而限制了基于WBG晶闸管的器件的能力。 能够在这种极端条件下工作的专用电子设备（包括用于航空航天和汽车工业的高功率开关、传感器、控制和功率管理）可以位于汽车发动机组内部，以实现更有效的燃料消耗和减少大气污染（由于不完全的气体燃烧）。 在高温环境空气中，复合接触金属化结构中相邻层之间的反应是限制基于WBG晶闸管的器件的可靠性和有效性的因素之一。 主要目标之一是使用最先进的高技术设备进行表面分析来研究此类反应。 一个简单的肖特基二极管器件与适当的保护屏障层将在环境空气中在高温下进行评估，在一个较长的时间。 器件电特性的稳定性将意味着阻挡层的有效性。 使用溅射系统还将使该团队能够探索与诺福克州立大学材料研究中心和Varicon Inc.的新合作。在建筑物中有效使用能源的“智能窗户”领域。 对于这种和类似的应用，称为显色材料（主要是掺杂的过渡金属氧化物）的太阳能材料将用溅射系统沉积，并由合作者进行局部表征。