Tunneling Field Effect Transistors for Beyond CMOS

超越 CMOS 的隧道场效应晶体管

• 批准号: 1202054
• 负责人: Sean Rommel
• 金额: $ 30.34万
• 依托单位: Rochester Institute of Tech
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-05-01 至 2015-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1202054&HistoricalAwards=false
• 关键词: Tunneling; Field; Effect; Transistors; Beyond

Objective: The transistor considered in this proposal is known as the Tunneling Field Effect Transistor (TFET). To be competitive with the conventional transistors, the TFET needs a drive current above 100 ?ÝA/?n?Ým and a subthreshold slope below 60 mV/dec at 0.5 V. Such a transistor has yet to be realized and is the ultimate goal of this proposal. The approach in this proposal is spread through three objectives: diode characterization, transistor design/demonstration, and circuit architecture. Intellectual Merit: TFETs are among the leading candidates for next generation transistor technology beyond CMOS. The proposed activities will provide a substantial experimental database that will transform the understanding/demonstration of TFETs through its analysis of (i) optimal material composition (2-terminal diode screening), (ii) lateral TFETs (proximity diffused or alloyed junction source), (iii) vertical TFETs (metal-first or mesa-first source), (iv) TFET SPICE model extraction, and (v) novel circuit design. Broader Impacts: The results of the project will be disseminated through a multi-tiered web site for public and private access. The work will be carried out by domestic graduate students who will be exposed to industrial and global interactions through external partners such as SEMATECH, U.S. Naval Research Laboratory, and Technion-Israel Institute of Technology. The PI also presents an integrated and realistic K-12 outreach plan in conjunction with West Irondequoit High School in suburban Rochester, NY. The PI will also develop unique exhibits for RIT¡¦s yearly Imagine RIT festival, a forum for public exposure to science.

目的：在这个建议中考虑的晶体管被称为Tunnel场效应晶体管（TFET）。为了与传统的晶体管竞争，TFET需要100以上的驱动电流？A/？你好吗？在0.5 V时，这种晶体管的亚阈值斜率低于60 mV/dec。本提案中的方法通过三个目标展开：二极管特性、晶体管设计/演示和电路架构。 智力优势：TFMII是超越CMOS的下一代晶体管技术的领先候选者之一。拟议的活动将提供一个实质性的实验数据库，通过分析（i）最佳材料成分（2端二极管屏蔽），（ii）横向TFFET（邻近扩散或合金结源），（iii）垂直TFFET（金属优先或台面优先源），（iv）TFET SPICE模型提取，以及（v）新型电路设计，改变对TFFET的理解/演示。更广泛的影响：该项目的结果将通过一个多层次的网站传播，供公众和私人访问。这项工作将由国内研究生进行，他们将通过SEMATECH、美国海军研究实验室和以色列理工学院等外部合作伙伴接触工业和全球互动。PI还提出了一个综合和现实的K-12外展计划与西Irondequoit高中在郊区罗切斯特，纽约。PI还将为RIT的年度想象RIT节开发独特的展品，这是一个公众接触科学的论坛。