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GOALI: Heterogeneous Integration of Compound Semiconductor Material with Silicon CMOS

GOALI: Heterogeneous Integration of Compound Semiconductor Material with Silicon CMOS
目标:化合物半导体材料与硅 CMOS 的异质集成
批准号:
0725760
负责人:
Sean Rommel
金额:
$29.93万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2007
资助国家:
美国
项目状态:
已结题
起止时间:
2007-09-01 至 2011-08-31

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中文摘要
翻译
本研究的目的是研究和开发基于III-V族化合物半导体的器件集成在可制造的硅平台上。AmberWave Systems开发了一种称为纵横比捕获的新型选择性外延技术,该技术涉及在硅中的高纵横比沟槽上选择性沉积化合物半导体。 在这个项目中,基本器件将被制造和表征,然后用硅电路实现III-V谐振隧道器件。智力优点:在硅上形成各种异质结构的能力对于增强集成电路的性能以用于未来的信息技术革命是至关重要的,因为硅器件的缩放接近基本极限。该提案包括一家小型创新公司AmberWave Systems与RIT之间的战略和协同合作伙伴关系,AmberWave Systems从事尖端先进的半导体衬底工程,RIT拥有高度认可的微电子工程项目,并拥有学生运行的集成电路实验室。更广泛的影响:根据该提案开发的技术将在高频混合信号、光电、光子系统芯片技术等新领域产生深远的影响,并将硅技术扩展到现有技术路线之外。 学生将接触到研发环境,并在学习先进技术的同时体验技术开发。 该公司将获得一个成熟的集成电路工厂,在那里可以进行大量的研发工作,涉及教师和学生。 外联活动的目标是让高中教师参与,吸引少数族裔和市中心的学生。
英文摘要
The objective of this research is to investigate and develop III-V compound semiconductor based devices integrated on a manufacturable silicon platform. AmberWave Systems has developed a novel selective epitaxy technique known as Aspect Ratio Trapping that involves selective deposition of compound semiconductors on high aspect ratio trenches in silicon. In this project, basic devices will be fabricated and characterized followed by realizing III-V resonant tunnel devices with silicon circuitry. Intellectual merit: The ability to form a wide variety of heterostructures on silicon is critical for enhancing the performance of integrated circuits for future information technology revolution as scaling of silicon devices is approaching fundamental limits. This proposal encompasses a strategic and synergistic partnership between a small innovation company, AmberWave Systems, engaged in cutting edge advanced semiconductor substrate engineering and RIT that has a highly recognized microelectronic engineering program with a student run integrated circuit laboratory. This proposal will facilitate this partnership in achieving critically needed breakthroughs.Broader Impact: The technology developed under this proposal will have far reaching implications in new areas of high frequency mixed signal, optoelectronic, photonic system on chip technologies as well as in extending silicon beyond the perceived technology roadmap. The students will be exposed to an R&D environment and experience technology development while learning advanced techniques. The company will get access to an established integrated circuit fab where a significant amount of R&D work can be performed involving faculty and students. The outreach activities will be targeted at involvement of high school teachers and attracting minority and inner city students.
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Tunneling Field Effect Transistors for Beyond CMOS
  • 批准号:
    1202054
  • 项目类别:
    Standard Grant
  • 资助金额:
    $30.34万
  • 财政年份:
    2012
  • 负责人:
    Sean Rommel
  • 依托单位:
RUI: MRI Acquisition of a Scanning Electron Microscope with Energy Dispersive X-Ray and C-Mode Scanning Acoustic Microscope for a Centralized Laboratory for Imaging and Metrology
  • 批准号:
    0320869
  • 项目类别:
    Standard Grant
  • 资助金额:
    $40.64万
  • 财政年份:
    2003
  • 负责人:
    Sean Rommel
  • 依托单位:
海外基金