GOALI: Heterogeneous Integration of Compound Semiconductor Material with Silicon CMOS

目标：化合物半导体材料与硅 CMOS 的异质集成

• 批准号: 0725760
• 负责人: Sean Rommel
• 金额: $ 29.93万
• 依托单位: Rochester Institute of Tech
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-09-01 至 2011-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0725760&HistoricalAwards=false
• 关键词: GOALI; Heterogeneous; Integration; Compound; Semiconductor

The objective of this research is to investigate and develop III-V compound semiconductor based devices integrated on a manufacturable silicon platform. AmberWave Systems has developed a novel selective epitaxy technique known as Aspect Ratio Trapping that involves selective deposition of compound semiconductors on high aspect ratio trenches in silicon. In this project, basic devices will be fabricated and characterized followed by realizing III-V resonant tunnel devices with silicon circuitry. Intellectual merit: The ability to form a wide variety of heterostructures on silicon is critical for enhancing the performance of integrated circuits for future information technology revolution as scaling of silicon devices is approaching fundamental limits. This proposal encompasses a strategic and synergistic partnership between a small innovation company, AmberWave Systems, engaged in cutting edge advanced semiconductor substrate engineering and RIT that has a highly recognized microelectronic engineering program with a student run integrated circuit laboratory. This proposal will facilitate this partnership in achieving critically needed breakthroughs.Broader Impact: The technology developed under this proposal will have far reaching implications in new areas of high frequency mixed signal, optoelectronic, photonic system on chip technologies as well as in extending silicon beyond the perceived technology roadmap. The students will be exposed to an R&D environment and experience technology development while learning advanced techniques. The company will get access to an established integrated circuit fab where a significant amount of R&D work can be performed involving faculty and students. The outreach activities will be targeted at involvement of high school teachers and attracting minority and inner city students.

本研究的目标是在可制造的硅平台上研究和开发基于III-V化合物半导体的器件。AmberWave Systems开发了一种名为长宽比陷阱的新型选择性外延技术，该技术包括在硅的高长宽比沟槽上选择性地沉积化合物半导体。在本项目中，将制作基本器件并对其进行表征，然后使用硅电路实现III-V谐振隧道器件。智能优势：随着硅器件的规模接近基本极限，在硅上形成各种异质结构的能力对于在未来的信息技术革命中提高集成电路的性能至关重要。这项提议包括一家小型创新公司AmberWave Systems和RIT之间的战略和协同合作伙伴关系。AmberWave Systems从事尖端先进半导体基板工程，RIT拥有高度认可的微电子工程项目，拥有一个学生运营的集成电路实验室。这项提议将促进这一合作伙伴关系实现迫切需要的突破。广泛影响：根据这项提议开发的技术将在高频混合信号、光电子、光子芯片系统技术等新领域产生深远影响，并将硅扩展到人们所认为的技术路线图之外。学生们将接触到研发环境，在学习先进技术的同时体验技术发展。该公司将获得一个成熟的集成电路制造厂的使用权，在那里，教职员工可以进行大量的研发工作。外展活动将针对高中教师的参与，并吸引少数族裔和市中心的学生。