Collaborative Research: Defect Modeling and Process Optimization for Nanowire Growth towards Improved Nanodevice Reliability

合作研究：纳米线生长的缺陷建模和工艺优化，以提高纳米器件的可靠性

• 批准号: 1238301
• 负责人: Haitao Liao
• 金额: $ 16.8万
• 依托单位: University of Arizona
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-01-06 至 2015-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1238301&HistoricalAwards=false
• 关键词: Collaborative; Research; Defect; Modeling; Process

The objective of this award is to optimize the growth process of semiconductor nanowires (NWs) by modeling the interrelationship between their growth process variables, structural defects, and mechanical properties, so that reliable NW-based devices with fewer defects can be produced. A double-loop framework will be investigated in this research, which links NW defects and the reliability of NW-based devices for the first time. The fundamental questions to be answered are: (1) How to systematically establish the relationship between the process variables, the generation rates of different NW defects, and the reliability of NW-based devices? (2) How to expedite the reliability prediction for NW-based devices and use the achieved reliability information to perform the application-centric defect reduction through the manipulation of the NW growth process? Specifically, we will (1) model the stochastic generation process of NW defects that link the generation of different types of defects to the NW growth-process variables; (2) develop a statistical fracture model for NWs with various defects under mechanical loading; (3) explore an advanced accelerated testing methodology and optimize the NW growth process by the optimal experimental design methods; and (4) conduct validation studies based on the proposed methodology by developing benchmark NW-based nanodevices, and demonstrate their desired reliability performance.If successful, this research will facilitate today's fast-paced technological advancements that are continually faced with increasing needs for cost-effective product-development technologies. It will result in an appealing practice that helps resolve common fabrication problems in a wide spectrum of nanomaterials/device development processes. It is expected that a systematic process optimization approach for the development of highly reliable NW-based devices, instead of trial-and-error approaches that are currently used in the field of nanomanufacturing, will be achieved. Moreover, the educational initiatives will strengthen the related programs at the two collaborative institutions, which will impact a large number of on-campus and nationwide distance students. The research result will also be broadly disseminated through technical publications, workshops, short courses, and K-12 outreach program.

该奖项的目的是通过模拟其生长过程变量，结构缺陷和机械性能之间的相互关系来优化半导体纳米线（NW）的生长过程，从而可以生产出具有更少缺陷的可靠NW器件。一个双循环的框架将在这项研究中，它链接NW缺陷和基于NW的设备的可靠性的第一次。需要回答的基本问题是：（1）如何系统地建立工艺变量、不同NW缺陷的产生率和NW基器件的可靠性之间的关系？(2)如何加快基于NW的器件的可靠性预测，并使用所获得的可靠性信息来执行以应用为中心的缺陷减少通过操纵NW生长过程？具体而言，我们将（1）模拟纳米线缺陷的随机产生过程，将不同类型缺陷的产生与纳米线生长过程变量联系起来;（2）建立机械载荷下具有各种缺陷的纳米线的统计断裂模型;（3）探索先进的加速测试方法，并通过最优实验设计方法优化纳米线生长过程;以及（4）根据所提出的方法，通过开发基准的基于NW的纳米器件进行验证研究，并展示其期望的可靠性性能。如果成功，这项研究将促进当今快速的技术进步，这些技术进步不断面临对具有成本效益的产品开发技术的日益增长的需求。它将产生一种有吸引力的实践，有助于解决广泛的纳米材料/器件开发过程中的常见制造问题。预计将实现用于开发高度可靠的基于NW的设备的系统工艺优化方法，而不是目前在纳米制造领域中使用的试错方法。此外，教育举措将加强两个合作机构的相关项目，这将影响到大量的校园和全国范围内的远程学生。研究成果还将通过技术出版物、研讨会、短期课程和K-12外展计划广泛传播。