Electronic and Atomistic Effects in Nanostructures
Electronic and Atomistic Effects in Nanostructures
批准号:
1305583
负责人:
Tai Chiang
金额:
$56.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-08-01 至 2017-07-31
中文摘要
点击翻译按钮获取中文摘要
英文摘要
****Technical Abstract****This project is a study of the atomic-scale structure and behavior of composite systems that are prepared by atomic deposition, artificial layering, and thermal processing of metals on the most important electronic substrate materials, including silicon, germanium, and silicon carbide, that are flat, stepped, or decorated by atomic wires. The deposited metals, amounting to few atomic layers thick, tend to self-organize into nanoscale features, such as atomic wires, stripes, mesas, pyramids, or even ultrasmooth films, because of quantum confinement and boundary effects. These nanostructures often exhibit unusual properties that are not intuitively connected to the behavior of the metals in the bulk form. The underlying nanoscale science is a key basis for developing new material and device configurations relevant to technological and industrial advances. The research will focus on the connections between the stability, shapes, and sizes of the nanostructures and the electronic structure and chemical properties of the system, with the intent to derive a general understanding and design rules for guiding system fabrication and functionalization. The experimental tools will include angle-resolved photoemission spectroscopy and x-ray diffraction, and much of the work will be performed at national synchrotron-radiation facilities. This research bridges basic science and applications, and provides opportunities for education and training of students, postdoctoral research associates, and visiting scholars in the use of modern tools for materials synthesis and characterization. The experiences will position them well for careers in scientific research, education, technology, and industry.****Non-Technical Abstract****This project is a study of the atomic-scale structure and behavior of composite systems prepared by atomic deposition, artificial layering, and controlled heat treatment of metals on the most common electronic substrate materials including silicon, germanium, and silicon carbide. The deposited metals, amounting to few atomic layers thick, tend to naturally develop nanoscale features such as atomic wires, stripes, mesas, pyramids, or even ultrasmooth films. These nanostructures often exhibit unusual properties that are not observed in the bulk form of these materials. The underlying nanoscale science is a key basis for developing new materials and device configurations for industry. The research will focus on the connections between the stability, shapes, and sizes of the nanostructures and the electronic structure and chemical properties of the system, with the intent to derive a general understanding and design rules to guide the development of new functional materials. The experiments will be performed at national synchrotron radiation facilities, which provide intense x-rays for probing the systems of interest. This research bridges basic science and applications, and provides opportunities for education and training of students, postdoctoral research associates, and visiting scholars in the use of modern tools for materials synthesis and characterization. The experiences will position them well for careers in scientific research, education, technology, and industry.
期刊论文(1)
专著(0)
科研奖励(0)
会议论文
DOI:
10.1103/physrevb.96.205434
发表时间:
2017-11
期刊:
Physical Review B
影响因子:
3.7
作者:
[P. Kowalczyk;O. Mahapatra;Maxime Le Ster;S. Brown;G. Bian;Xiaoxiong Wang;T. Chiang]
通讯作者:
P. Kowalczyk;O. Mahapatra;Maxime Le Ster;S. Brown;G. Bian;Xiaoxiong Wang;T. Chiang
Coupled Electronic and Lattice Structures in Thin Crystalline Films
-
批准号:1709945
-
项目类别:Continuing Grant
-
资助金额:$64.64万
-
财政年份:2017
-
负责人:Tai Chiang
-
依托单位:
Electronic and Atomistic Effects in Nanostructures
-
批准号:0906444
-
项目类别:Continuing Grant
-
资助金额:$50.0万
-
财政年份:2009
-
负责人:Tai Chiang
-
依托单位:
Electronic and Atomistic Effects in Quantum Structures
-
批准号:0503323
-
项目类别:Continuing Grant
-
资助金额:$0.0万
-
财政年份:2005
-
负责人:Tai Chiang
-
依托单位:
Electronic Effects in Quantum Structures
-
批准号:0203003
-
项目类别:Continuing Grant
-
资助金额:$33.0万
-
财政年份:2002
-
负责人:Tai Chiang
-
依托单位:
Development of an Ultrahigh Resolution Photoemission System for Studies of Quantum Structures and Training of Students
-
批准号:9975182
-
项目类别:Standard Grant
-
资助金额:$19.77万
-
财政年份:1999
-
负责人:Tai Chiang
-
依托单位:
Electronic Properties of Impurities, Surfaces, and Quantum Structures
-
批准号:9975470
-
项目类别:Continuing Grant
-
资助金额:$33.0万
-
财政年份:1999
-
负责人:Tai Chiang
-
依托单位:
Acquisition and Development of a High-Resolution Photoelectron Analyzer for Studies of Surfaces, Films, and Multilayers of Metals, Semiconductors, & Magnetic Materi
-
批准号:9531582
-
项目类别:Continuing Grant
-
资助金额:$15.36万
-
财政年份:1996
-
负责人:Tai Chiang
-
依托单位:
Metallic and Magnetic Quantum Structures
-
批准号:9531809
-
项目类别:Continuing Grant
-
资助金额:$27.0万
-
财政年份:1996
-
负责人:Tai Chiang
-
依托单位:
Metal Surfaces, Quantum Wells, and Superlattices
-
批准号:9223546
-
项目类别:Continuing Grant
-
资助金额:$28.5万
-
财政年份:1993
-
负责人:Tai Chiang
-
依托单位:
Metal Surfaces, Interfaces, and Multilayer Structures
-
批准号:8919056
-
项目类别:Continuing Grant
-
资助金额:$26.9万
-
财政年份:1990
-
负责人:Tai Chiang
-
依托单位:
Metal Interfaces
-
批准号:8614234
-
项目类别:Continuing Grant
-
资助金额:$25.8万
-
财政年份:1987
-
负责人:Tai Chiang
-
依托单位:
Presidential Young Investigator Award
-
批准号:8352083
-
项目类别:Continuing Grant
-
资助金额:$28.71万
-
财政年份:1984
-
负责人:Tai Chiang
-
依托单位:
Metal Interfaces (Materials Research)
-
批准号:8311281
-
项目类别:Continuing Grant
-
资助金额:$25.0万
-
财政年份:1983
-
负责人:Tai Chiang
-
依托单位:
海外基金