Metal Surfaces, Quantum Wells, and Superlattices
Metal Surfaces, Quantum Wells, and Superlattices
批准号:
9223546
负责人:
Tai Chiang
金额:
$28.5万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1993
资助国家:
美国
项目状态:
已结题
起止时间:
1993-04-01 至 1996-09-30
中文摘要
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英文摘要
A study of the structure, growth behavior; and properties of selected metal surface, interfaces, overlayers, quantum wells, multilayers, and superlattices is proposed. The purpose is to obtain a fundamental understanding of the scientific principles that govern the crystalline form, chemical composition, and electronic properties of metal epitaxial systems and quantum structures. The experimental techniques to be employed include (angle-resolved) synchrotron photoemission, Auger spectroscopy, electron diffraction, scanning tunneling microscopy and spectroscopy, and grazing-incidence X-ray diffraction. Samples will be prepared and fabricated using standard ultrahigh vacuum techniques as well as molecular beam epitaxy and chamical vapor deposition. The work will include investigation of bulk and surface band structure, coherence and scattering lengths, and spatial distributions of electronic states; adsorption geometry, cluster and island formation, and film growth behavior; evolution of surface, interface, and quantum-well states as a function of sample structure; atomic structure of buried interfaces; coupling between quantum wells; and phenomena pertaining to superlattices and multilayer structures. %%% Artificial structures made of stacks of thin layers can exhibit interesting and potentially useful electronic properties. Using state-of-the-art techniques for materials synthesis, it is now possible to fabricate layer configurations with layer thicknesses approaching the atomic dimension. In such systems, electrons can become trapped, reflected, or refracted by the boudaries between layers. Because these happen on an atomic scale, substantial modifications of the electronic properties can be achieved by tailoring the structure. This research project will employ a variety of experimental techniques to address the basic questions concerning the growth and characterization of various layer configurations, and the relationships between the atomic structure and the electronic properties. Part of the work will be carried out at the Synchrotron Radiation Center at Madison, Wisconsin and the National Synchrotron Light Source at the Brookhaven National Laboratory. This research involves a cooperation between work supported by the National Science Foundation and the Department of Energy.
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Coupled Electronic and Lattice Structures in Thin Crystalline Films
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批准号:1709945
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项目类别:Continuing Grant
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资助金额:$64.64万
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财政年份:2017
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负责人:Tai Chiang
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依托单位:
Electronic and Atomistic Effects in Nanostructures
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批准号:1305583
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项目类别:Continuing Grant
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资助金额:$56.0万
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财政年份:2013
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负责人:Tai Chiang
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依托单位:
Electronic and Atomistic Effects in Nanostructures
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批准号:0906444
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项目类别:Continuing Grant
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资助金额:$50.0万
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财政年份:2009
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负责人:Tai Chiang
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依托单位:
Electronic and Atomistic Effects in Quantum Structures
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批准号:0503323
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2005
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负责人:Tai Chiang
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依托单位:
Electronic Effects in Quantum Structures
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批准号:0203003
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项目类别:Continuing Grant
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资助金额:$33.0万
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财政年份:2002
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负责人:Tai Chiang
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依托单位:
Development of an Ultrahigh Resolution Photoemission System for Studies of Quantum Structures and Training of Students
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批准号:9975182
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项目类别:Standard Grant
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资助金额:$19.77万
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财政年份:1999
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负责人:Tai Chiang
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依托单位:
Electronic Properties of Impurities, Surfaces, and Quantum Structures
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批准号:9975470
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项目类别:Continuing Grant
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资助金额:$33.0万
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财政年份:1999
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负责人:Tai Chiang
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依托单位:
Acquisition and Development of a High-Resolution Photoelectron Analyzer for Studies of Surfaces, Films, and Multilayers of Metals, Semiconductors, & Magnetic Materi
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批准号:9531582
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项目类别:Continuing Grant
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资助金额:$15.36万
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财政年份:1996
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负责人:Tai Chiang
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依托单位:
Metallic and Magnetic Quantum Structures
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批准号:9531809
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项目类别:Continuing Grant
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资助金额:$27.0万
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财政年份:1996
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负责人:Tai Chiang
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依托单位:
Metal Surfaces, Interfaces, and Multilayer Structures
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批准号:8919056
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项目类别:Continuing Grant
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资助金额:$26.9万
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财政年份:1990
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负责人:Tai Chiang
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依托单位:
Metal Interfaces
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批准号:8614234
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项目类别:Continuing Grant
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资助金额:$25.8万
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财政年份:1987
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负责人:Tai Chiang
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依托单位:
Presidential Young Investigator Award
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批准号:8352083
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项目类别:Continuing Grant
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资助金额:$28.71万
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财政年份:1984
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负责人:Tai Chiang
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依托单位:
Metal Interfaces (Materials Research)
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批准号:8311281
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项目类别:Continuing Grant
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资助金额:$25.0万
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财政年份:1983
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负责人:Tai Chiang
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依托单位:
海外基金