Spatially Resolved Optoelectronics of Strongly Correlated Nanostructures and Mott Transistors

强相关纳米结构和莫特晶体管的空间分辨光电子学

• 批准号: 1310678
• 负责人: Dong Yu
• 金额: $ 27.4万
• 依托单位: University of California-Davis
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-07-01 至 2016-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1310678&HistoricalAwards=false
• 关键词: Spatially; Resolved; Optoelectronics; Strongly; Correlated

Technical Description: This research project aims to enhance our understanding of the optoelectronic properties of strongly correlated nanostructures and to develop Mott transistors incorporating vanadium dioxide nanobeams. The project is to establish a clear physical picture of energy band alignment and carrier dynamics in the insulating and metallic phases in vanadium dioxide nanobeams. The application of scanning photocurrent microscopy (SPCM) offers spatially resolved photocurrent mapping, from which local electric field distribution and charge carrier diffusion length can be extracted. Using efficient electrochemical gating, the PI also develops Mott transistors, which take advantage of the sub-100-femtosecond phase transition for information processing. SPCM is a unique tool for identifying the gate-induced metallic layer and studying the associated interfacial junction.Non-Technical Description: Strongly correlated materials are not only fascinating test beds for studying condensed matter physics but also have high application potential for smart windows, ultrafast optical shutters, and Mott transistors, a new type of transistors with very fast operation speeds and very low energy consumption. The spatially resolved optoelectronic investigation of vanadium dioxide nanobeams can provide key information for better understanding of the metal-insulator transitions and the development of ultrafast Mott transistors. The project involves an outreach endeavor including regular seminars on nanotechnology with a focus on K-12 public schools in low-income areas of Sacramento and Davis, California. The PI incorporates the research topics on strongly correlated nanostructures into a new interdisciplinary course.

技术说明：该研究项目旨在提高我们对强相关纳米结构的光电特性的理解，并开发结合二氧化钒纳米梁的莫特晶体管。该项目旨在建立二氧化钒纳米梁绝缘相和金属相能带排列和载流子动力学的清晰物理图像。扫描光电流显微镜（SPCM）的应用提供了空间分辨的光电流映射，从局部电场分布和电荷载流子扩散长度可以提取。利用高效的电化学门控，PI还开发了莫特晶体管，它利用了亚100飞秒的相变进行信息处理。非技术描述：强关联材料不仅是研究凝聚态物理的理想实验平台，而且在智能窗、超快光闸和Mott晶体管（一种运行速度非常快、能耗非常低的新型晶体管）等领域具有很高的应用潜力。二氧化钒纳米束的空间分辨光电研究可以为更好地理解金属-绝缘体转变和超快Mott晶体管的发展提供关键信息。该项目涉及一项外展奋进包括定期举办纳米技术研讨会，重点是加州萨克拉门托和戴维斯低收入地区的K-12公立学校。PI将强相关纳米结构的研究课题纳入一个新的跨学科课程。