Understanding and Modifying the Band Structure of Nano-Graphene Ribbons

了解和修改纳米石墨烯带的能带结构

• 批准号: 1401193
• 负责人: Edward Conrad
• 金额: $ 39.99万
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-08-01 至 2018-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1401193&HistoricalAwards=false
• 关键词: Understanding; Modifying; Band; Structure; Nano

This project is co-funded by the Electronic and Photonic Materials Program and the Condensed Matter Physics Program.Non-technical Description: Going beyond classical digital electronics to devices based on quantum switches is a goal of modern materials research. Graphene grown on trenches etched in silicon carbide have recently shown incredible electronic and magnetic properties that potentially offer a new platform for quantum-based electronics. Conductivities 100 times larger than theoretical predicted maximums are now obtainable. However, the physical origin of these amazing properties is not yet clear. This research project aims to understand the detailed structure of sub-50 nanometer graphene ribbons and to develop new ways to reproducibly grow and alter their electronic properties. The societal impact of developing these graphene ribbons for near room-temperature quantum-switching networks would have far reaching impacts. In addition to the influence on technology, the project will train undergraduate students in this new field, as well as educating high-school science teachers so that they may better advise their students on the rewards of scientific and engineering professions.Technical Description: It has recently been shown that graphene grown on the sidewalls of SiC trenches has exceptional transport properties with mobilities exceeding predicted limits for 2-dimentional graphene by more than two orders of magnitude [Nature 506, 349-354 (2014)]. The high degree of order implied by these exceptional properties offers an opportunity to make significant advances in graphene electronics. However, the physical origin of the novel room-temperature ballistic transport in these ribbons is not understood. This proposal's goal is to correlate the nanostructure of the graphene sidewall ribbons with their measured band structure. The research team intends to uncover the role of strain, substrate bonding, and finite size effects on the electronic properties of these unique ribbons and their spectacular transport. The team uses a broad set of high-resolution surface sensitive probes that allow the research to go beyond transport experiments alone to directly measure their electronic structure. It employs high-resolution angle resolved photoemission to measure their electronic band structure and correlate those results with ribbon structure measured by scanning tunneling microscopy, low energy electron microscopy and transmission electron microscopy.

该项目由电子和光子材料计划和凝聚态物理计划共同资助。非技术描述：超越经典数字电子学到基于量子开关的设备是现代材料研究的目标。在碳化硅蚀刻的沟槽上生长的石墨烯最近显示出令人难以置信的电子和磁性特性，可能为基于量子的电子学提供一个新的平台。现在可以获得比理论预测最大值大 100 倍的电导率。然而，这些令人惊奇的特性的物理起源尚不清楚。该研究项目旨在了解 50 纳米以下石墨烯带的详细结构，并开发可重复生长和改变其电子特性的新方法。开发这些用于近室温量子开关网络的石墨烯带将产生深远的社会影响。除了对技术的影响外，该项目还将培训这一新领域的本科生，并教育高中科学教师，以便他们更好地为学生提供有关科学和工程专业回报的建议。技术描述：最近表明，在碳化硅沟槽侧壁上生长的石墨烯具有卓越的传输特性，其迁移率超出了二维石墨烯的预测极限两个数量级以上[自然] 506, 349-354 (2014)]。这些特殊特性所暗示的高度有序性为石墨烯电子学取得重大进展提供了机会。然而，这些带中新型室温弹道输运的物理起源尚不清楚。该提案的目标是将石墨烯侧壁带的纳米结构与其测量的能带结构相关联。研究小组打算揭示应变、基板键合和有限尺寸效应对这些独特带材的电子特性及其壮观的输运的作用。该团队使用了一系列高分辨率表面敏感探针，使研究能够超越单纯的传输实验，直接测量其电子结构。它采用高分辨率角分辨光电来测量其电子能带结构，并将这些结果与扫描隧道显微镜、低能电子显微镜和透射电子显微镜测量的带结构相关联。