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Studies of the Growth and Electronic Properties of Epitaxial Graphene

Studies of the Growth and Electronic Properties of Epitaxial Graphene
外延石墨烯的生长和电子性能研究
批准号:
1005880
负责人:
Edward Conrad
金额:
$36.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2010
资助国家:
美国
项目状态:
已结题
起止时间:
2010-09-01 至 2014-08-31

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Technical Abstract:The development of terahertz graphene electronics requires a variety of fundamental questions to be addressed. This project will use epitaxial graphene on SiC as an unprecedented platform to answer these questions. The work is broken into three parts. In the first set of experiments, the very first studies of growth kinetics in a high-pressure furnace environment using x-ray scattering will be carried out and lead to a better understanding of graphene growth. In the second part of the research, the patternabilty of epitaxial graphene will be exploited to grow large area arrays of graphene nano-ribbons. These arrays will allow, for the first time, photoemission studies of the width dependent gap. Finally, the ribbon arrays will allow various adsorbents to be side diffused into the graphene-SiC interface. This work will allow controlled experiments on compensation doping of graphene ribbons to overcome charge transfer from the SiC. Graduate and undergraduate students will not only learn a variety of highly specialized experimental techniques, but they will also have the opportunity to become forefront researchers in graphene electronics development. Non-Technical Abstract:The competitive advantage of the US electronics industry requires a solution for the approaching end of silicon-based electronics. Epitaxial graphene offers a serious promise to drastically surpass silicon and lead to ultra high-speed electronics. While epitaxial graphene is a radical electronics material, it requires novel device designs, growth methods and materials challenges to be understood and tested before graphene enters commercial or military systems. The research carried out under this program addresses these challenges. The very first studies to understand graphene growth in a high-pressure furnace environment will be carried out. Research will involve new techniques to produce ultra thin graphene ribbons that will allow studies of this new material's unique electronic properties. Graduate and undergraduate students participating in this research will not only learn a variety of highly specialized experimental techniques, but they will also have the opportunity to become forefront researchers in graphene electronics development. This highly trained workforce will allow the US to continue its lead in the Global electronics industry.
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Understanding and Modifying the Band Structure of Nano-Graphene Ribbons
  • 批准号:
    1401193
  • 项目类别:
    Standard Grant
  • 资助金额:
    $39.99万
  • 财政年份:
    2014
  • 负责人:
    Edward Conrad
  • 依托单位:
Collaborative Research: Impurity Incorporation into Epitaxial Graphene on SiC
  • 批准号:
    1206655
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $6.4万
  • 财政年份:
    2012
  • 负责人:
    Edward Conrad
  • 依托单位:
Effect of Defects on the Magnetic Properties of 2D Films Using Patterned Substrates
  • 批准号:
    9623283
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $24.0万
  • 财政年份:
    1996
  • 负责人:
    Edward Conrad
  • 依托单位:
Equilibrium and Non-Equilibrium Defect Structure of Metal Surfaces
  • 批准号:
    9211249
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $26.39万
  • 财政年份:
    1992
  • 负责人:
    Edward Conrad
  • 依托单位:
国内基金
海外基金
基于FP-Growth关联分析算法的重症患者抗菌药物精准决策模型的构建和实证研究
  • 批准号:
    2024Y9049
  • 项目类别:
    省市级项目
  • 资助金额:
    100.0万元
  • 批准年份:
    2024
  • 负责人:
    阮君山
  • 依托单位:
Research on the Rapid Growth Mechanism of KDP Crystal
  • 批准号:
    10774081
  • 项目类别:
    面上项目
  • 资助金额:
    45.0万元
  • 批准年份:
    2007
  • 负责人:
    滕冰
  • 依托单位: