Studies of the Growth and Electronic Properties of Epitaxial Graphene

外延石墨烯的生长和电子性能研究

• 批准号: 1005880
• 负责人: Edward Conrad
• 金额: $ 36万
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-09-01 至 2014-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1005880&HistoricalAwards=false
• 关键词: Studies; Growth; Electronic; Properties; Epitaxial

Technical Abstract:The development of terahertz graphene electronics requires a variety of fundamental questions to be addressed. This project will use epitaxial graphene on SiC as an unprecedented platform to answer these questions. The work is broken into three parts. In the first set of experiments, the very first studies of growth kinetics in a high-pressure furnace environment using x-ray scattering will be carried out and lead to a better understanding of graphene growth. In the second part of the research, the patternabilty of epitaxial graphene will be exploited to grow large area arrays of graphene nano-ribbons. These arrays will allow, for the first time, photoemission studies of the width dependent gap. Finally, the ribbon arrays will allow various adsorbents to be side diffused into the graphene-SiC interface. This work will allow controlled experiments on compensation doping of graphene ribbons to overcome charge transfer from the SiC. Graduate and undergraduate students will not only learn a variety of highly specialized experimental techniques, but they will also have the opportunity to become forefront researchers in graphene electronics development. Non-Technical Abstract:The competitive advantage of the US electronics industry requires a solution for the approaching end of silicon-based electronics. Epitaxial graphene offers a serious promise to drastically surpass silicon and lead to ultra high-speed electronics. While epitaxial graphene is a radical electronics material, it requires novel device designs, growth methods and materials challenges to be understood and tested before graphene enters commercial or military systems. The research carried out under this program addresses these challenges. The very first studies to understand graphene growth in a high-pressure furnace environment will be carried out. Research will involve new techniques to produce ultra thin graphene ribbons that will allow studies of this new material's unique electronic properties. Graduate and undergraduate students participating in this research will not only learn a variety of highly specialized experimental techniques, but they will also have the opportunity to become forefront researchers in graphene electronics development. This highly trained workforce will allow the US to continue its lead in the Global electronics industry.

技术摘要：太赫兹石墨烯电子的发展需要解决各种基本问题。 该项目将使用SiC上的外延石墨烯作为前所未有的平台来回答这些问题。 这项工作分为三个部分。 在第一组实验中，将使用X射线散射在高压炉环境中进行生长动力学的首次研究，并更好地了解石墨烯生长。 在研究的第二部分中，将利用外延石墨烯的图案化能力来生长大面积的石墨烯纳米带阵列。 这些阵列将允许，第一次，光电研究的宽度依赖的差距。 最后，带阵列将允许各种吸附剂侧向扩散到石墨烯-SiC界面中。 这项工作将允许对石墨烯带的补偿掺杂进行受控实验，以克服来自SiC的电荷转移。 研究生和本科生不仅将学习各种高度专业化的实验技术，而且他们还将有机会成为石墨烯电子开发的前沿研究人员。 非技术摘要：美国电子行业的竞争优势需要为即将到来的硅基电子产品提供解决方案。 外延石墨烯提供了一个严重的承诺，大大超过硅，并导致超高速电子产品。 虽然外延石墨烯是一种激进的电子材料，但在石墨烯进入商业或军事系统之前，需要了解和测试新的器件设计、生长方法和材料挑战。 在该计划下进行的研究解决了这些挑战。 将进行第一次研究，以了解石墨烯在高压炉环境中的生长。 研究将涉及生产超薄石墨烯带的新技术，这将允许研究这种新材料的独特电子特性。 参与这项研究的研究生和本科生不仅将学习各种高度专业化的实验技术，而且他们还将有机会成为石墨烯电子开发的前沿研究人员。 这些训练有素的劳动力将使美国继续在全球电子行业中保持领先地位。