Spin Injection and Manipulation in Graphene-based Spintronics Devices

基于石墨烯的自旋电子器件中的自旋注入和操纵

• 批准号: 1402990
• 负责人: Enrique del Barco
• 金额: $ 36万
• 依托单位: The University of Central Florida Board of Trustees
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-06-01 至 2017-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1402990&HistoricalAwards=false
• 关键词: Spin; Injection; Manipulation; Graphene; based

This project aims at developing an integrated experimental and educational framework for understanding of dynamical spin pumping, spin injection, and generation of pure spin currents in graphene-based spintronics devices. A series of experimental and theoretical research activities have been strategized in collaboration with the Graphene Research Centre at the National University of Singapore. The goal of the proposed research is to develop nanoscale devices for information processing where a complete control of the magnetic state is possible without relying on charge currents. Within emerging spintronics technologies, the generation and control of pure spin currents is becoming of paramount relevance. The unique property of graphene offers the advantage of pure spin current devices as preeminent candidate for the next generation of information processing and storage hardware. The proposed research will be integrated with a series of educational and training activities, including training of graduate students at the interface of fundamental and applied physics, and gain experience from international collaboration. The PIs are committed to involving underrepresented groups in the research activities at all levels.The project proposes a series of experimental and theoretical research activities for the understanding of injection and control of pure spin currents in graphene-based spintronic devices that uses dynamical spin pumping and the spin-Hall effect (SHE). The goal is to develop nanoscale devices for information processing where a complete control of the magnetic state is possible without the direct intervention of net charge currents. The proposed devices will make use of the unique properties of graphene to allow generation and manipulation of pure spin currents for controlling the magnetic state of the device that not possible with spin transfer torque devices based on non-gateable elements. The specific objectives of the project are to: a) understand dynamical spin pumping from a ferromagnet (FM) into single-layer and multi-layer graphene (Gr) under different structural conditions exfoliated, chemical vapor deposition grown, and hydrogenated graphene) and for different interfacial configurations (FM/Gr and FM/MgO/Gr); b) understand the SHE in single-layer and multi-layer graphene under different structural conditions and study its behavior as a function of the gate voltage; and, c) develop graphene-based gateable pure spin current valves that uses both dynamical spin pumping and SHE to allow for an efficient control of magnetic state of the devices and explore their potential applications for next generationlow-power high-speed MRAM, information processing and storage devices.

该项目旨在开发一个综合的实验和教育框架，以了解石墨烯自旋电子器件中的动态自旋泵，自旋注入和纯自旋电流的产生。与新加坡国立大学石墨烯研究中心合作，制定了一系列实验和理论研究活动的战略。拟议研究的目标是开发用于信息处理的纳米级器件，其中可以完全控制磁状态而不依赖于充电电流。在新兴的自旋电子学技术中，纯自旋电流的产生和控制正变得至关重要。石墨烯的独特性质提供了纯自旋电流器件作为下一代信息处理和存储硬件的卓越候选者的优势。拟议的研究将与一系列教育和培训活动相结合，包括在基础物理和应用物理的界面上培训研究生，并从国际合作中获得经验。该项目致力于让代表性不足的群体参与各级研究活动。该项目提出了一系列实验和理论研究活动，以了解使用动态自旋泵和自旋霍尔效应（SHE）的石墨烯基自旋电子器件中纯自旋电流的注入和控制。其目标是开发用于信息处理的纳米级器件，其中完全控制磁状态是可能的，而无需净电荷电流的直接干预。所提出的器件将利用石墨烯的独特性质，以允许产生和操纵纯自旋电流，用于控制器件的磁状态，这对于基于不可选通元件的自旋转移矩器件是不可能的。该项目的具体目标是：a）了解在不同结构条件下从铁磁体（FM）到单层和多层石墨烯（Gr）的动态自旋泵（剥离，化学气相沉积生长和氢化石墨烯）以及不同的界面配置（FM/Gr和FM/MgO/Gr）; B）理解在不同结构条件下单层和多层石墨烯中的SHE并研究其作为栅极电压的函数的行为;以及，c）开发基于石墨烯的可选通纯自旋电流阀，其使用动态自旋泵浦和SHE两者以允许对器件的磁状态的有效控制，并探索它们对于下一代低功率高速MRAM、信息处理和存储器件的潜在应用。