Defect-Managed, High-Mobility Oxide Thin Films and Heterostructures for Fundamental Study
用于基础研究的缺陷管理、高迁移率氧化物薄膜和异质结构
基本信息
- 批准号:1410888
- 负责人:
- 金额:$ 36.6万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2014
- 资助国家:美国
- 起止时间:2014-09-15 至 2018-08-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
NON-TECHNICAL DESCRIPTION: This project focuses on the development of an advanced state-of-the-art thin film deposition technique for the synthesis of a new class of complex oxides that are highly perfect. These materials possess multi-functional properties that are of great interest for next generation devices of power electronics and energy conversion. The exploration of these materials with unprecedented structure quality and low defects provides valuable input for experimental testing of theoretical models, in addition to facilitating the fundamental study of materials physics at reduced size and dimensionality. The research activities contribute to the professional development experience for students from local high schools, minority organizations and community colleges through training and "science awareness" workshops. TECHNICAL DETAILS: Through the establishment of molecular beam epitaxy growth approaches, this project is studying the fundamental physics of highly stoichiometric, precisely doped, defect-managed complex oxides with outstanding potential for room temperature electronics. The project is seeking to exploit these structures by conducting detailed structural and electronic transport studies in order to understand, and eventually control, specific defects, local structure, and electronic mobility. In particular, the work is seeking a fundamental understanding of factors, which control room temperature electron mobility in perovskite oxides using a "model" material system (BaSnO3) that presents opportunities to enhance electron mobility at room temperature via defect-management and remote doping approaches. The project is providing opportunities for graduate, undergraduate and high school students to obtain training in the interdisciplinary areas of materials science and engineering, electrical engineering, materials chemistry, and materials physics. Students are gaining experience with cutting-edge thin film deposition approaches, advanced characterization techniques, and theoretical calculations. The project also contributes to the education outreach by training students enrolled in a vacuum and thin film technology program at local community colleges in Minneapolis. These students are often find employment as technicians after completing this program.
非技术描述:该项目的重点是开发先进的最先进的薄膜沉积技术,用于合成高度完美的新型复杂氧化物。这些材料具有多功能性能,对于电力电子和能量转换的下一代设备引起了极大的兴趣。除了促进材料物理学的基本研究外,对理论模型的实验测试的实验测试还提供了有价值的输入,以降低大小和维度,对这些材料的探索还为理论模型的实验测试提供了宝贵的投入。研究活动通过培训和“科学意识”讲习班为来自当地高中,少数组织和社区大学的学生提供了专业发展经验。技术细节:通过建立分子束外延生长方法,该项目正在研究高度化学计量,精确掺杂,缺陷管理的复合氧化物的基本物理学,具有室温电子产品的出色潜力。该项目正在寻求通过进行详细的结构和电子传输研究来利用这些结构,以了解并最终控制特定的缺陷,局部结构和电子迁移率。特别是,这项工作是在寻求对因素的基本理解,这些因素使用“模型”材料系统(BASNO3)控制室温氧化物中的室温电子迁移率(BASNO3),这提供了通过缺陷管理和远程掺杂方法在室温下在室温下增强电子迁移率的机会。该项目为研究生,本科和高中生提供了机会,可以在材料科学和工程,电气工程,材料化学和材料物理学的跨学科领域获得培训。 学生正在获得尖端的薄膜沉积方法,高级表征技术和理论计算的经验。该项目还通过培训明尼阿波利斯当地社区学院的吸尘器和薄膜技术计划的学生来促进教育宣传。完成此计划后,通常会发现这些学生是技术人员的工作。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Bharat Jalan其他文献
Microstructure of epitaxial rutile TiO<sub>2</sub> films grown by molecular beam epitaxy on <em>r</em>-plane Al<sub>2</sub>O<sub>3</sub>
- DOI:
10.1016/j.jcrysgro.2009.10.005 - 发表时间:
2009-12-15 - 期刊:
- 影响因子:
- 作者:
Roman Engel-Herbert;Bharat Jalan;Joël Cagnon;Susanne Stemmer - 通讯作者:
Susanne Stemmer
Bharat Jalan的其他文献
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{{ truncateString('Bharat Jalan', 18)}}的其他基金
High Mobility Binary and Ternary Germanate Films and Heterostructures
高迁移率二元和三元德国酸盐薄膜和异质结构
- 批准号:
2306273 - 财政年份:2023
- 资助金额:
$ 36.6万 - 项目类别:
Continuing Grant
Understanding and Controlling Defects, Disorder and Electronic Transport in High Mobility Perovskite Oxides
了解和控制高迁移率钙钛矿氧化物中的缺陷、无序和电子传输
- 批准号:
1741801 - 财政年份:2017
- 资助金额:
$ 36.6万 - 项目类别:
Continuing Grant
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