Defect-Managed, High-Mobility Oxide Thin Films and Heterostructures for Fundamental Study
用于基础研究的缺陷管理、高迁移率氧化物薄膜和异质结构
基本信息
- 批准号:1410888
- 负责人:
- 金额:$ 36.6万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2014
- 资助国家:美国
- 起止时间:2014-09-15 至 2018-08-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
NON-TECHNICAL DESCRIPTION: This project focuses on the development of an advanced state-of-the-art thin film deposition technique for the synthesis of a new class of complex oxides that are highly perfect. These materials possess multi-functional properties that are of great interest for next generation devices of power electronics and energy conversion. The exploration of these materials with unprecedented structure quality and low defects provides valuable input for experimental testing of theoretical models, in addition to facilitating the fundamental study of materials physics at reduced size and dimensionality. The research activities contribute to the professional development experience for students from local high schools, minority organizations and community colleges through training and "science awareness" workshops. TECHNICAL DETAILS: Through the establishment of molecular beam epitaxy growth approaches, this project is studying the fundamental physics of highly stoichiometric, precisely doped, defect-managed complex oxides with outstanding potential for room temperature electronics. The project is seeking to exploit these structures by conducting detailed structural and electronic transport studies in order to understand, and eventually control, specific defects, local structure, and electronic mobility. In particular, the work is seeking a fundamental understanding of factors, which control room temperature electron mobility in perovskite oxides using a "model" material system (BaSnO3) that presents opportunities to enhance electron mobility at room temperature via defect-management and remote doping approaches. The project is providing opportunities for graduate, undergraduate and high school students to obtain training in the interdisciplinary areas of materials science and engineering, electrical engineering, materials chemistry, and materials physics. Students are gaining experience with cutting-edge thin film deposition approaches, advanced characterization techniques, and theoretical calculations. The project also contributes to the education outreach by training students enrolled in a vacuum and thin film technology program at local community colleges in Minneapolis. These students are often find employment as technicians after completing this program.
非技术描述:该项目的重点是开发一种先进的薄膜沉积技术,用于合成一类新的高度完美的复合氧化物。这些材料具有多功能特性,对于下一代电力电子和能量转换设备具有极大的兴趣。对这些具有前所未有的结构质量和低缺陷的材料的探索为理论模型的实验测试提供了有价值的投入,此外还促进了材料物理学在减小尺寸和维度下的基础研究。研究活动通过培训和“科学意识”讲习班,为当地高中、少数民族组织和社区学院的学生的专业发展经验作出贡献。技术规格:通过建立分子束外延生长方法,该项目正在研究高化学计量、精确掺杂、缺陷管理的复合氧化物的基础物理,这些复合氧化物具有出色的室温电子学潜力。该项目旨在通过进行详细的结构和电子输运研究来利用这些结构,以了解并最终控制特定缺陷、局部结构和电子迁移率。特别是,这项工作正在寻求对因素的基本理解,这些因素使用“模型”材料系统(BaSnO3)控制钙钛矿氧化物中的室温电子迁移率,该系统提供了通过缺陷管理和远程掺杂方法提高室温电子迁移率的机会。该项目为研究生、本科生和高中生提供了在材料科学与工程、电气工程、材料化学和材料物理等跨学科领域接受培训的机会。 学生将获得尖端薄膜沉积方法、先进表征技术和理论计算的经验。该项目还通过培训在明尼阿波利斯当地社区学院参加真空和薄膜技术课程的学生,为教育推广做出贡献。这些学生通常在完成该计划后找到技术人员的工作。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Bharat Jalan其他文献
Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures
在亚环境温度下利用独立式 SrTiO3 纳米膜中初始铁电性的多功能二维场效应晶体管
- DOI:
10.1038/s41467-024-54231-z - 发表时间:
2024-12-30 - 期刊:
- 影响因子:15.700
- 作者:
Dipanjan Sen;Harikrishnan Ravichandran;Mayukh Das;Pranavram Venkatram;Sooho Choo;Shivasheesh Varshney;Zhiyu Zhang;Yongwen Sun;Jay Shah;Shiva Subbulakshmi Radhakrishnan;Akash Saha;Sankalpa Hazra;Chen Chen;Joan M. Redwing;K. Andre Mkhoyan;Venkatraman Gopalan;Yang Yang;Bharat Jalan;Saptarshi Das - 通讯作者:
Saptarshi Das
A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors
- DOI:
10.1557/s43578-021-00377-1 - 发表时间:
2021-09-21 - 期刊:
- 影响因子:2.900
- 作者:
William Nunn;Tristan K. Truttmann;Bharat Jalan - 通讯作者:
Bharat Jalan
Intrinsic vs. extrinsic magnetic transitions in Sr3Ru2O7 films
- DOI:
10.1557/s43578-025-01661-0 - 发表时间:
2025-07-31 - 期刊:
- 影响因子:2.900
- 作者:
Rashmi Choudhary;Anil Rajapitamahuni;Silu Guo;Qianni Jiang;Jiun-Haw Chu;K. Andre Mkhoyan;Bharat Jalan - 通讯作者:
Bharat Jalan
Microstructure of epitaxial rutile TiO<sub>2</sub> films grown by molecular beam epitaxy on <em>r</em>-plane Al<sub>2</sub>O<sub>3</sub>
- DOI:
10.1016/j.jcrysgro.2009.10.005 - 发表时间:
2009-12-15 - 期刊:
- 影响因子:
- 作者:
Roman Engel-Herbert;Bharat Jalan;Joël Cagnon;Susanne Stemmer - 通讯作者:
Susanne Stemmer
Bharat Jalan的其他文献
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{{ truncateString('Bharat Jalan', 18)}}的其他基金
High Mobility Binary and Ternary Germanate Films and Heterostructures
高迁移率二元和三元德国酸盐薄膜和异质结构
- 批准号:
2306273 - 财政年份:2023
- 资助金额:
$ 36.6万 - 项目类别:
Continuing Grant
Understanding and Controlling Defects, Disorder and Electronic Transport in High Mobility Perovskite Oxides
了解和控制高迁移率钙钛矿氧化物中的缺陷、无序和电子传输
- 批准号:
1741801 - 财政年份:2017
- 资助金额:
$ 36.6万 - 项目类别:
Continuing Grant
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